公开(公告)号：US20160111252A1

公开(公告)日：2016-04-21

申请号：US14879518

申请日：2015-10-09

Applicant: NuFlare Technology, Inc.

Inventor： Tomoo MOTOSUGI

IPC: H01J37/302 ,  H01J37/06 ,  H01J37/04

CPC classification number: H01J37/3174 ,  H01J37/3045 ,  H01J2237/30433 ,  H01J2237/30455 ,  H01J2237/31776 ,  H01J2237/31796

Abstract: In a charged particle beam writing apparatus, a charged particle optical system includes a first, second, and third deflection control system configured to form a shot of a charged particle beam, control a shape and size of the shot, and control an irradiation position of the shot respectively. A shot data generation processing device generates shot data of writing a latent image on a resist layer in a sample, using (1) design data of a pattern to be formed in a member, wherein the member is formed in a sample, and the resist layer is formed on the member, and (2) correction information of a shot size and an irradiation shot position obtained from in-plane distribution data of an XY dimension variation amount of dimension measurement patterns. The dimension measurement patterns are formed by writing test patterns on a resist layer and transferring the test patterns onto a member.

Abstract translation: 在带电粒子束写入装置中，带电粒子光学系统包括：第一，第二和第三偏转控制系统，被配置为形成带电粒子束的镜头，控制镜头的形状和尺寸，并且控制照射位置 拍摄分别。 拍摄数据生成处理装置使用（1）在构件中形成的图案的设计数据来生成在样品中的抗蚀剂层上写入潜像的拍摄数据，其中，所述构件形成在样品中，并且抗蚀剂 层形成在构件上，（2）从尺寸测量图案的XY尺寸变化量的平面内分布数据获得的拍摄尺寸和照射拍摄位置的校正信息。 尺寸测量图案通过在抗蚀剂层上书写测试图案并将测试图案转移到构件上而形成。

公开(公告)号：US20150041671A1

公开(公告)日：2015-02-12

申请号：US14446899

申请日：2014-07-30

Applicant: NuFlare Technology, Inc.

Inventor： Tomoo MOTOSUGI ,  Hirohito ANZE ,  Satoshi NAKAHASHI

IPC: H01J37/302 ,  H01J37/317

CPC classification number: H01J37/3026 ,  H01J37/3174 ,  H01J2237/31764

Abstract: A charged particle beam writing method includes determining whether a difference between one of the total area of a pattern and the number of shots in a stripe region with respect to one of adjacent stripe regions of the stripe regions and one of the total area and the number of shots with respect to the other of the adjacent stripe regions exceeds a threshold value, re-dividing, when the difference exceeds the threshold value, a stripe region where the total area or the number of shots is larger than that of the other stripe region in the adjacent stripe regions so that the difference of the total area or the number of shots becomes lower than or equal to the threshold value, and writing a pattern in the stripe regions including a re-divided stripe region, in the writing order of arrangement of the stripe regions.

Abstract translation: 带电粒子束写入方法包括：确定图案的总面积之一与条纹区域中的相邻条带区域中的一个相对于条纹区域中的拍摄数量之间的差异以及总区域和数量之一 相对于另一个相邻条带区域的拍摄超过阈值，当差超过阈值时，重新分割总区域或拍摄数量大于其他条纹区域的区域 在相邻的条带区域中，使得总面积或拍摄数量的差变得低于或等于阈值，并且以包括重划分条纹区域在内的条纹区域以书写顺序 的条纹区域。

公开(公告)号：US20210193436A1

公开(公告)日：2021-06-24

申请号：US17102551

申请日：2020-11-24

Applicant: NuFlare Technology, Inc.

Inventor： Tomoo MOTOSUGI

IPC: H01J37/317 ,  H01J37/302 ,  H01J37/147 ,  H01J37/20

Abstract: In one embodiment, a settling time determination method includes deflecting a charged particle beam by applying a voltage outputted from an amplifier to a first deflector while changing a deflection settling time, and writing an evaluation pattern, measuring a position of the evaluation pattern, and determining a position displacement amount of the measured position from a design position, performing fitting of the position displacement amount for the deflection settling time on a first output waveform of the amplifier, and determining a deflection settling time in which the position displacement amount is within a predetermined range.

公开(公告)号：US20180033592A1

公开(公告)日：2018-02-01

申请号：US15658571

申请日：2017-07-25

Applicant: NuFlare Technology, Inc.

Inventor： Rumi ITO ,  Tomoo MOTOSUGI

IPC: H01J37/302 ,  H01J37/304 ,  H01J37/317

CPC classification number: H01J37/3023 ,  H01J37/304 ,  H01J37/3174 ,  H01J2237/24585

Abstract: In one embodiment, a charged particle beam drawing method includes calculating a resist film reduction amount caused by etching from data representing a relation between a resist area rate and a resist film reduction amount and from an area rate of a pattern to be drawn, calculating a remaining resist-film thickness distribution by employing both an initial thickness of the resist film and the resist film reduction amount, estimating a dimension distribution of the light-shielding film pattern from the remaining resist-film thickness distribution, creating a first dimension correction map by determining a dimension correction amount from the estimated dimension distribution, creating a third dimension correction map by synthesizing a second dimension correction map to correct a relatively macroscopic dimensional variation and the first dimension correction map, and calculating an irradiation dose of the charged particle beam by employing the third dimension correction map.

公开(公告)号：US20170243718A1

公开(公告)日：2017-08-24

申请号：US15427200

申请日：2017-02-08

Applicant: NuFlare Technology, Inc.

Inventor： Tomoo MOTOSUGI

IPC: H01J37/302 ,  H01J37/317

CPC classification number: H01J37/3023 ,  H01J37/3174 ,  H01J2237/30411

Abstract: In one embodiment, A charged particle beam drawing apparatus includes an irradiation amount resetting processing circuitry changing the irradiation amount in the shot data to the irradiation amount lower limit value when the irradiation amount defined in the shot data is less than the irradiation amount lower limit value, a shot size adjustment processing circuitry changing the shot size defined in the shot data, based on an amount of the change in the irradiation amount, a shot position adjustment processing circuitry changing the shot position defined in the shot data, based on an amount of the change in the shot size, and a drawing device drawing a pattern by irradiating the substrate with the charged particle beam, using the shot data in which the irradiation amount, the shot size, and the shot position have been changed.

公开(公告)号：US20150228455A1

公开(公告)日：2015-08-13

申请号：US14607559

申请日：2015-01-28

Applicant: NuFlare Technology, Inc.

Inventor： Tomoo MOTOSUGI ,  Takayuki OHNISHI ,  Kaoru TSURUTA ,  Kenji OHTOSHI

IPC: H01J37/317 ,  H01J37/10 ,  H01J37/20 ,  H01J37/302 ,  H01J37/21

CPC classification number: H01J37/3174 ,  H01J37/10 ,  H01J37/20 ,  H01J37/21 ,  H01J37/3026 ,  H01J2237/006 ,  H01J2237/0492 ,  H01J2237/063 ,  H01J2237/103 ,  H01J2237/2007

Abstract: A charged particle beam writing apparatus includes an emission unit to emit a charged particle beam, a stage to mount thereon a target object to be written, an objective lens to focus the charged particle beam on a surface of the target object, a chamber to house the stage, a measurement unit to measure a partial pressure of a predetermined gas in the chamber in a state where a pressure inside the chamber is controlled to be lower than an atmospheric pressure, and an adjustment unit to adjust a focus position for focusing the charged particle beam on the target object, based on the partial pressure of the predetermined gas.

Abstract translation: 带电粒子束写入装置包括发射带电粒子束的发射单元，其上安装待写入的目标物体的载物台，将带电粒子束聚焦在目标物体的表面上的物镜， 该阶段是在室内的压力被控制为低于大气压力的状态下测量室内的预定气体的分压的测量单元，以及调节单元，用于调整聚焦位置以聚焦带电 基于预定气体的分压，靶物体上的粒子束。