Invention Application
US20160111252A1 CHARGED PARTICLE BEAM WRITING APPARATUS, CHARGED PARTICLE BEAM WRITING METHOD, AND SHOT CORRECTION METHOD OF CHARGED PARTICLE BEAM WRITING METHOD 有权
充电颗粒光束写字装置,充电颗粒光束写入方法和充电颗粒光束写入方法的发射校正方法

  • Patent Title: CHARGED PARTICLE BEAM WRITING APPARATUS, CHARGED PARTICLE BEAM WRITING METHOD, AND SHOT CORRECTION METHOD OF CHARGED PARTICLE BEAM WRITING METHOD
  • Patent Title (中): 充电颗粒光束写字装置,充电颗粒光束写入方法和充电颗粒光束写入方法的发射校正方法
  • Application No.: US14879518
    Application Date: 2015-10-09
  • Publication No.: US20160111252A1
    Publication Date: 2016-04-21
  • Inventor: Tomoo MOTOSUGI
  • Applicant: NuFlare Technology, Inc.
  • Applicant Address: JP Yokohama
  • Assignee: NuFlare Technology, Inc.
  • Current Assignee: NuFlare Technology, Inc.
  • Current Assignee Address: JP Yokohama
  • Priority: JP2014-213726 20141020
  • Main IPC: H01J37/302
  • IPC: H01J37/302 H01J37/06 H01J37/04
CHARGED PARTICLE BEAM WRITING APPARATUS, CHARGED PARTICLE BEAM WRITING METHOD, AND SHOT CORRECTION METHOD OF CHARGED PARTICLE BEAM WRITING METHOD
Abstract:
In a charged particle beam writing apparatus, a charged particle optical system includes a first, second, and third deflection control system configured to form a shot of a charged particle beam, control a shape and size of the shot, and control an irradiation position of the shot respectively. A shot data generation processing device generates shot data of writing a latent image on a resist layer in a sample, using (1) design data of a pattern to be formed in a member, wherein the member is formed in a sample, and the resist layer is formed on the member, and (2) correction information of a shot size and an irradiation shot position obtained from in-plane distribution data of an XY dimension variation amount of dimension measurement patterns. The dimension measurement patterns are formed by writing test patterns on a resist layer and transferring the test patterns onto a member.
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