Abstract:
In one embodiment, a charged particle beam drawing apparatus performs drawing by deflecting a charged particle beam with a deflector. A method for evaluating the apparatus includes making a shot of a first pattern, controlling a deflection amount by the deflector to move an applied position of the beam from the first pattern along a first direction to make a shot of a second pattern, controlling the deflection amount to move the applied position from the second pattern along the first direction to make a shot of a third pattern, controlling the deflection amount to move the applied position from the third pattern along a second direction opposite to the first direction to make a shot of a fourth pattern between the second pattern and the third pattern, calculating an interval between the second pattern and the fourth pattern, and comparing the calculated interval to a reference interval.
Abstract:
A charged particle beam writing method comprising, an irradiation step of irradiating a sample with a charged particle beam emitted from a charged particle source, a first blanking step of performing the blanking while the charged particle beam is moved in a first direction from a position of the charged particle beam in the irradiation step; and a second blanking step of performing the blanking the charged particle beam is moved in a second direction opposite to the first direction from the position of the charged particle beam in the irradiation step.
Abstract:
In one embodiment, a charged particle beam drawing apparatus performs drawing by deflecting a charged particle beam with a deflector. A method for evaluating the apparatus includes making a shot of a first pattern, controlling a deflection amount by the deflector to move an applied position of the beam from the first pattern along a first direction to make a shot of a second pattern, controlling the deflection amount to move the applied position from the second pattern along the first direction to make a shot of a third pattern, controlling the deflection amount to move the applied position from the third pattern along a second direction opposite to the first direction to make a shot of a fourth pattern between the second pattern and the third pattern, calculating an interval between the second pattern and the fourth pattern, and comparing the calculated interval to a reference interval.
Abstract:
In a method for forming a resist film, a first resist film is formed on a light shielding film formed on a substrate, by using a spin coating method. A protective film is formed on the first resist film. The protective film and the first resist film are simultaneously removed at the same region to expose a portion of the light shielding film. A first region in which the second resist film is formed on the light shielding film and a second region in which the second resist film is formed on the first resist film through the protective film, are provided. The protective film and the second resist film are simultaneously removed in the second region to expose the first resist film. A region in which the first resist film, and a region in which the second resist film, is formed, are separately provided on the substrate.
Abstract:
A charged particle beam writing apparatus includes an emission unit to emit a charged particle beam, a stage to mount thereon a target object to be written, an objective lens to focus the charged particle beam on a surface of the target object, a chamber to house the stage, a measurement unit to measure a partial pressure of a predetermined gas in the chamber in a state where a pressure inside the chamber is controlled to be lower than an atmospheric pressure, and an adjustment unit to adjust a focus position for focusing the charged particle beam on the target object, based on the partial pressure of the predetermined gas.
Abstract:
A mask drawing method includes: disposing a grounding body provided with a grounding pin at a plurality of different places on a mask substrate to measure resistance values; disposing the grounding body at a position where the resistance value is lowest, among the plural positions where the resistance values are measured; and irradiating an electron beam to the mask substrate to draw a desired pattern.