公开(公告)号：US20020093096A1

公开(公告)日：2002-07-18

申请号：US10043225

申请日：2002-01-14

申请人： NEC CORPORATION

发明人： Masamoto Tago ,  Tomohiro Nishiyama ,  Tetuya Tao ,  Kaoru Mikagi

IPC分类号： H01L023/48

CPC分类号： H01L24/05 ,  B23K3/0623 ,  B23K2101/40 ,  H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05552

摘要： A highly reliable semiconductor chip electrode structure allowing control of interface reaction of bonding sections even in the case of using two- or three-element solder used conventionally is disclosed. A solder alloy making layer for preventing dissolving and diffusion of tin into tin-based lead flee solder is thinly formed on a UBM layer The tin-based solder is supplied in solder paste or solder ball form. A combined solder alloy layer composed of a combination of intermetallic compounds, one of tin and the solder alloy making layer, and one of tin and the UBM layer, is formed by heating and melting.

摘要翻译： 公开了一种高度可靠的半导体芯片电极结构，即使在常规使用二元件或三元件焊料的情况下也能够控制接合部分的界面反应。 用于防止锡在锡基铅焊料中的溶解和扩散的焊料合金制作层在UBM层上薄薄地形成。锡基焊料以焊膏或焊球形式提供。 通过加热熔融形成由锡和焊料合金制造层之一以及锡和UBM层之一组成的金属间化合物组合的组合焊料合金层。

公开(公告)号：US20030151140A1

公开(公告)日：2003-08-14

申请号：US10359124

申请日：2003-02-06

申请人： NEC CORPORATION

发明人： Tomohiro Nishiyama ,  Masamoto Tago

IPC分类号： H01L021/44 ,  H01L023/48

CPC分类号： H05K3/3436 ,  H01L21/563 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/10145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/1181 ,  H01L2224/1182 ,  H01L2224/11901 ,  H01L2224/11906 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13565 ,  H01L2224/136 ,  H01L2224/13609 ,  H01L2224/16 ,  H01L2224/16237 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81011 ,  H01L2224/81013 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/814 ,  H01L2224/81801 ,  H01L2224/8191 ,  H01L2224/92125 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H05K2201/0367 ,  H05K2201/2081 ,  Y02P70/613 ,  H01L2224/13099 ,  H01L2224/29099

摘要： A columnar bump formed of copper etc. is formed on a wiring film of a semiconductor chip through an interconnected film and an adhesive film in a wafer unit by electrolytic plating in which package formation is possible. An oxidation prevention film is formed of such as gold on an upper surface or a part of the upper surface and side surface. A wet prevention film of such as an oxide film is formed on the columnar bump side as needed. If this bump is soldered to the pad on a packaging substrate, solder gets wet in the whole region of the columnar bump upper surface and only a part of the side surface. Stabilized and reliable junction form can be thus formed. Moreover, since the columnar bump does not fuse, the distance between a semiconductor board and a packaging board is not be narrowed by solder.

摘要翻译： 在半导体芯片的布线膜上通过互连膜和晶片单元中的粘合膜形成由铜等形成的柱状凸起，其中电解电镀可以进行封装形成。 氧化防止膜在上表面或上表面和侧表面的一部分上由金形成。 根据需要，在柱状凸起面上形成氧化膜等防湿膜。 如果将该凸块焊接到封装基板上的焊盘，则焊料在柱状凸起上表面的整个区域和侧表面的一部分中变湿。 可以形成稳定且可靠的接合形式。 此外，由于柱状凸块不熔合，所以半导体基板与封装基板之间的距离不会被焊料变窄。

公开(公告)号：US20010025874A1

公开(公告)日：2001-10-04

申请号：US09819518

申请日：2001-03-27

申请人： NEC Corporation

发明人： Tomohiro Nishiyama

IPC分类号： B23K031/02 ,  B23K001/20 ,  B23K035/12

CPC分类号： H05K3/3436 ,  B23K1/0016 ,  B23K35/3613 ,  B23K2101/40 ,  H01L24/11 ,  H01L2224/11334 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/351 ,  H05K3/3478 ,  H05K2201/035 ,  H05K2201/10674 ,  H05K2201/10977 ,  H05K2203/0338 ,  H05K2203/041 ,  Y02P70/613 ,  H01L2924/00

摘要： Solder balls are mounted on electrodes with an active resin therebetween. The solder is heated and melts to be connected to pads of an LSI chip, thereby forming solder bumps on the chip. In a method of forming bumps, a method of mounting flip chips, and a mounting structure, by the use of the active resin, a flux washing process can be eliminated and at the same time, an assembly cost can be minimized.

摘要翻译： 焊球安装在其间具有活性树脂的电极上。 焊料被加热并熔化以连接到LSI芯片的焊盘，从而在芯片上形成焊料凸块。 在形成凸块的方法中，通过使用活性树脂安装倒装芯片和安装结构的方法可以消除助焊剂清洗过程，同时可以最小化组装成本。