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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20230130373A1

    公开(公告)日：2023-04-27

    申请号：US17937701

    申请日：2022-10-03

    申请人： Mitsubishi Electric Corporation

    发明人： Masayuki NISHIYAMA ,  Rei YONEYAMA ,  Naoki YOSHIMATSU ,  Shintaro ARAKI ,  Tatsuya KAWASE ,  Hiroyuki MASUMOTO

    IPC分类号： H01L23/373 ,  H01L25/07 ,  H01L23/00 ,  H01L23/31 ,  H01L23/473

    摘要： A semiconductor device includes: an insulating layer; a circuit pattern on an upper surface of the insulating layer; a semiconductor element bonded to an upper surface of the circuit pattern through a first bonding material; an insulating component bonded to the upper surface of the circuit pattern through a second bonding material; and a lead electrode connecting the semiconductor element to the insulating component, wherein an upper surface of the semiconductor element is bonded to a lower surface of the lead electrode through a third bonding material, an upper surface of the insulating component is bonded to the lower surface of the lead electrode through a fourth bonding material, and the first bonding material, the second bonding material, the third bonding material, and the fourth bonding material are made of a same material.

    SEMICONDUCTOR DEVICE INCLUDING SENSOR AND DRIVING TERMINALS SPACED AWAY FROM THE SEMICONDUCTOR DEVICE CASE WALL
    2.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING SENSOR AND DRIVING TERMINALS SPACED AWAY FROM THE SEMICONDUCTOR DEVICE CASE WALL 审中-公开

    公开(公告)号：US20190172763A1

    公开(公告)日：2019-06-06

    申请号：US16268698

    申请日：2019-02-06

    申请人： Mitsubishi Electric Corporation

    发明人： Motonobu JOKO ,  Rei YONEYAMA

    IPC分类号： H01L23/053 ,  H01L23/29 ,  H01L23/18 ,  G01R31/27 ,  H01L23/498 ,  G01R31/44

    摘要： A semiconductor device comprises a power device, a sensor which measures a physical state of the power device to transmit a signal according to the physical state, and a main electrode terminal through which a main current of the power device flows. The semiconductor device further comprises a sensor signal terminal connected to the sensor for receiving a signal from the sensor, a driving terminal which receives driving power for driving the power device, and an open bottomed case which houses the power device, the sensor, the main electrode terminal, the sensor signal terminal and the driving terminal. The first and second terminals electrically conduct with each other to form a double structure. Also, the sensor signal terminal and the driving terminal each have a first terminal and a second terminal which are not embedded within the case.

    SEMICONDUCTOR APPARATUS
    3.
    发明申请
    SEMICONDUCTOR APPARATUS 审中-公开

    公开(公告)号：US20190103329A1

    公开(公告)日：2019-04-04

    申请号：US15921704

    申请日：2018-03-15

    申请人： Mitsubishi Electric Corporation

    发明人： Nobuchika AOKI ,  Rei YONEYAMA ,  Akira GOTO ,  Akihiko YAMASHITA

    IPC分类号： H01L23/055 ,  H01L23/06 ,  H01L23/10 ,  H01L23/49

    摘要： A semiconductor apparatus includes: a case made of resin; an insert terminal including an external terminal portion embedded in the case and having a first terminal exposed from the case, and an internal terminal portion bent in a L shape with respect to a second terminal of the external terminal portion and having a first surface exposed from the case and an anchor part in close contact with the case; and a bonding wire bonded to the first surface of the internal terminal portion.

    PRESS-FIT TERMINAL, SEMICONDUCTOR DEVICE, POWER CONVERSION APPARATUS AND METHOD OF MANUFACTURING PRESS-FIT TERMINAL
    5.
    发明申请
    PRESS-FIT TERMINAL, SEMICONDUCTOR DEVICE, POWER CONVERSION APPARATUS AND METHOD OF MANUFACTURING PRESS-FIT TERMINAL 有权
    压接端子，半导体器件，功率转换装置和制造压接端子的方法

    公开(公告)号：US20160365662A1

    公开(公告)日：2016-12-15

    申请号：US15070649

    申请日：2016-03-15

    申请人： Mitsubishi Electric Corporation

    发明人： Yoshitaka KIMURA ,  Rei YONEYAMA ,  Akihiko YAMASHITA

    IPC分类号： H01R13/05 ,  H01R43/04 ,  H01R12/70

    CPC分类号： H01R12/585 ,  H01L23/49541 ,  H01L23/49551 ,  H01L23/49838 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01R12/7064 ,  H01L2924/00014

    摘要： A semiconductor device includes a case, a circuit substrate set in the case and having an electric circuit formed thereon, and a plurality of terminals arranged in the case by being spaced apart from each other, each terminal having a base portion electrically connected to the electric circuit in the case, and a trunk portion bent by forming a fold between the base portion and the trunk portion so as to rise from the base portion at the end of the base portion, the trunk portion having a press-fit portion formed at its distal end, wherein the fold is inclined relative to a longitudinal axis of the base portion, and wherein restitution directions in which the press-fit portions restitute from their contractions caused by press fitting are turned aside one from another between each adjacent pair of the terminals.

    摘要翻译： 半导体器件包括壳体，设置在壳体中并具有形成在其上的电路的电路基板以及通过彼此间隔布置在壳体中的多个端子，每个端子具有电连接到电气 电路，以及通过在基部和主体部之间形成折叠而弯折的主干部，以便在基部的端部从基部上升，主体部分在其上形成有压配合部分 其中所述折叠部相对于所述基部的纵向轴线倾斜，并且其中所述压配部分从压配合引起的收缩恢复的恢复方向在每个相邻的一对端子之间彼此相互转向 。

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190123012A1

    公开(公告)日：2019-04-25

    申请号：US15959350

    申请日：2018-04-23

    申请人： Mitsubishi Electric Corporation

    发明人： Taichi OBARA ,  Rei YONEYAMA ,  Masayuki ANDO

    IPC分类号： H01L23/00 ,  H03K17/081

    CPC分类号： H01L24/49 ,  H01L24/09 ,  H03K17/08104 ,  H03K17/08128 ,  H03K17/168

    摘要： A semiconductor device including a first semiconductor switching element having a first gate pad, a plurality of first emitter pads, and a first collector pad, a first wire for connecting adjacent pads out of the plurality of first emitter pads, a first output wire for connecting one of the plurality of first emitter pads to an output, a first controller for applying a gate voltage to the first gate pad, a first emitter wire that is directly connected to a first extraction pad which is any one pad of the plurality of first emitter pads, and is connected to the first controller to give a ground potential of the first controller, and a second semiconductor switching element having a second gate pad, a second emitter pad and a second collector pad connected to the output.

    Life Estimation Circuit and Semiconductor Device Made Using the Same
    10.
    发明申请
    Life Estimation Circuit and Semiconductor Device Made Using the Same 审中-公开
    寿命估算电路和使用其的半导体器件

    公开(公告)号：US20170074921A1

    公开(公告)日：2017-03-16

    申请号：US15180383

    申请日：2016-06-13

    申请人： Mitsubishi Electric Corporation

    发明人： Shiori UOTA ,  Fumitaka TAMETANI ,  Takahiro INOUE ,  Rei YONEYAMA

    IPC分类号： G01R31/26 ,  H01L27/06 ,  H01L29/739 ,  H01L29/16 ,  H01L29/861

    CPC分类号： G01R31/2642 ,  G01R31/2608 ,  G01R31/2632 ,  G01R31/42 ,  H01L27/0635 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/7393 ,  H01L29/861 ,  H03K17/18

    摘要： A life estimation circuit includes a temperature detector configured to detect temperature of a power element unit, an inflection point detection unit configured to detect an inflection point of temperature variation in the power element unit based on an output signal from the temperature detector, an operation unit configured to determine an absolute value of a difference between the temperature of the power element unit at an inflection point detected this time and the temperature of the power element unit at an inflection point detected last time, a count circuit configured to count the number of times that the absolute value of the difference in temperature has reached a threshold temperature, and a signal generation unit configured to output, when a count value from the count circuit reaches a threshold number of times, an alarm signal indicating that the power element is about to reach the end of its life.

    摘要翻译： 寿命估计电路包括：温度检测器，被配置为检测功率元件单元的温度;拐点检测单元，被配置为基于来自温度检测器的输出信号检测功率元件单元中的温度变化的拐点;操作单元 被配置为确定在此时检测的拐点处的功率元件单元的温度与上次检测到的拐点处的功率单元的温度之间的差的绝对值，配置为计数次数的计数电路 温度差的绝对值达到阈值温度，并且信号生成单元被配置为当来自计数电路的计数值达到阈值次数时，输出表示功率元件即将到达的报警信号 到达终身。