Partitioned through-layer via and associated systems and methods
    9.
    发明授权
    Partitioned through-layer via and associated systems and methods 有权
    分层通过层和通过相关的系统和方法

    公开(公告)号:US08536046B2

    公开(公告)日:2013-09-17

    申请号:US13757295

    申请日:2013-02-01

    发明人: Teck Kheng Lee

    IPC分类号: H01L21/44

    摘要: Partitioned vias, interconnects, and substrates that include such vias and interconnects are disclosed herein. In one embodiment, a substrate has a non-conductive layer and a partitioned via formed in a portion of the non-conductive layer. The non-conductive layer includes a top side, a bottom side, and a via hole extending between the top and bottom sides and including a sidewall having a first section a second section. The partitioned via includes a first metal interconnect within the via on the first section of the sidewall and a second metal interconnect within the via hole on the second section of the sidewall and electrically isolated from the first metal interconnect. In another embodiment, the first metal interconnect is separated from the second metal interconnect by a gap within the via hole.

    摘要翻译: 包括这种通孔和互连的分隔的过孔,互连和衬底在本文中公开。 在一个实施例中,衬底具有形成在非导电层的一部分中的非导电层和分隔通孔。 非导电层包括顶侧,底侧和在顶侧和底侧之间延伸的通孔,并且包括具有第一部分和第二部分的侧壁。 分隔通孔包括在侧壁的第一部分上的通孔内的第一金属互连和在侧壁的第二部分上的通孔内的第二金属互连,并与第一金属互连电隔离。 在另一个实施例中,第一金属互连通过通孔内的间隙与第二金属互连分开。