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公开(公告)号:US20240126690A1
公开(公告)日:2024-04-18
申请号:US18395363
申请日:2023-12-22
Applicant: Micron Technology, Inc.
Inventor: Kishore Kumar Muchherla , Peter Feeley , Ashutosh Malshe , Daniel J. Hubbard , Christopher S. Hale , Kevin R. Brandt , Sampath K. Ratnam , Yun Li , Marc S. Hamilton
IPC: G06F12/02 , G06F3/06 , G06F12/00 , G06F12/06 , G06F12/0891
CPC classification number: G06F12/0253 , G06F3/0629 , G06F3/0634 , G06F3/064 , G06F3/0688 , G06F3/0689 , G06F12/00 , G06F12/0646 , G06F12/0891 , G11C11/5621
Abstract: A memory system includes a memory array having a plurality of memory cells; and a controller coupled to the memory array, the controller configured to: designate a storage mode for a target set of memory cells based on valid data in a source block, wherein the target set of memory cells are configured with a capacity to store up to a maximum number of bits per cell, and the storage mode is for dynamically configuring the target set of memory cells in as cache memory that stores a number of bits less per cell than the corresponding maximum capacity.
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公开(公告)号:US20230205455A1
公开(公告)日:2023-06-29
申请号:US17561508
申请日:2021-12-23
Applicant: Micron Technology, Inc.
Inventor: Karl D. Schuh , Daniel J. Hubbard
IPC: G06F3/06
CPC classification number: G06F3/0659 , G06F3/0653 , G06F3/0604 , G06F3/0613 , G06F3/0679
Abstract: Exemplary methods, apparatuses, and systems include receiving a request to perform an operation in memory. A subdivision of the memory to which the request is directed is determined. A command completion time based upon a command type for the operation and which subdivision of the memory to which the request is directed is determined. A command is sent to the memory for the operation. A request is sent to the memory for a status of the command based upon the determined command completion time.
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公开(公告)号:US20230043418A1
公开(公告)日:2023-02-09
申请号:US17514267
申请日:2021-10-29
Applicant: Micron Technology, Inc.
Inventor: Karl D. Schuh , Ali Mohammadzadeh , Dheeraj Srinivasan , Daniel J. Hubbard , Luca Bert
IPC: G06F3/06
Abstract: Exemplary methods, apparatuses, and systems include aggregating a plurality of memory status commands. Each command of the plurality of memory status commands is assigned a corresponding bit on a memory interface. The plurality of memory status commands are sent in parallel as an aggregate status command to one or more memory components via the memory interface.
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公开(公告)号:US20210191858A1
公开(公告)日:2021-06-24
申请号:US17196934
申请日:2021-03-09
Applicant: Micron Technology, Inc.
Inventor: Yun Li , Kishore Kumar Muchherla , Peter Feeley , Ashutosh Malshe , Daniel J. Hubbard , Christopher S. Hale , Kevin R. Brandt , Sampath K. Ratnam
IPC: G06F12/02 , G06F12/0891
Abstract: Memory circuits including dynamically configurable cache cells are disclosed herein. The cache cells may be selectively and dynamically configured to select one or more bits per cell according to a real-time determination or characterization of a workload type.
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公开(公告)号:US20210064267A1
公开(公告)日:2021-03-04
申请号:US16552750
申请日:2019-08-27
Applicant: Micron Technology, Inc.
Inventor: Daniel J. Hubbard , Marc S. Hamilton , Kevin R. Brandt , William Akin
IPC: G06F3/06
Abstract: A memory component includes multiple fuses, a memory array having a multiple blocks, and control logic operatively coupled with the memory array and the plurality of fuses. The control logic is to receive an erase command associated with the memory array and attempt to erase, in response to receipt of the erase command, a block of the multiple blocks from the memory array. The control logic is further to detect a failure to completely erase the block. The control logic is further to receive a blow fuse command in response to the failure to completely erase the block. The control logic is to blow a fuse, of the multiple fuses, which is coupled with the block, to make the block of the multiple blocks inaccessible to the control logic.
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公开(公告)号:US10452532B2
公开(公告)日:2019-10-22
申请号:US15404407
申请日:2017-01-12
Applicant: Micron Technology, Inc.
Inventor: Jeffrey L. McVay , Daniel J. Hubbard , Robert W. Strong , Michael B. Danielson , Jonathan Tanguy
Abstract: The present disclosure includes apparatuses and methods for directed sanitization of memory. One example method comprises, responsive to receiving a sanitization command, performing a deterministic garbage collection operation on a memory, wherein performing the deterministic garbage collection operation results in physical erasure of all invalid data stored on the memory without losing valid data stored on the memory.
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公开(公告)号:US20190303038A1
公开(公告)日:2019-10-03
申请号:US15937146
申请日:2018-03-27
Applicant: Micron Technology, Inc.
Inventor: Daniel J. Hubbard
IPC: G06F3/06
Abstract: Systems and methods for specifying storage media types in write commands executable by storage devices are disclosed. An example system comprises: a plurality of memory devices and a controller operatively coupled to the memory devices, the controller configured to: receive a write command specifying a data item and an identifier of a data stream comprising the data item; determine, by parsing the identifier of the data stream, a data stream attribute shared by data items comprised by the data stream; identify, based on the data stream attribute, a memory device managed by the controller; and transmit, to the memory device, an instruction specifying the data item.
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公开(公告)号:US12223208B2
公开(公告)日:2025-02-11
申请号:US18513742
申请日:2023-11-20
Applicant: Micron Technology, Inc.
Inventor: Daniel J. Hubbard , Roy Leonard
IPC: G06F3/06 , G06F12/0846 , G06F12/0882
Abstract: A system includes a memory and a processing device, operatively coupled to the memory, to perform operations including initiating a write operation to write data to a first multiple level cell (XLC) storage including a first XLC block and a second XLC storage including a second XLC block, and causing a first portion of the data to be written to a first number of pages of the first XLC block and a second portion of the data to be written to a second number of pages of the second XLC block using page level interleave. The first number of pages and the second number of pages are defined by an interleave mix including an interleave ratio between a first XLC write mode and a second XLC write mode.
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公开(公告)号:US20250013368A1
公开(公告)日:2025-01-09
申请号:US18747582
申请日:2024-06-19
Applicant: Micron Technology, Inc.
Inventor: Daniel J. Hubbard , Meng Wei
IPC: G06F3/06
Abstract: Aspects of the present disclosure configure a memory sub-system controller to balance program-erase count (PEC) across multiple reclaim groups of a memory sub-system. The controller groups a set of memory components into a plurality of reclaim groups (RGs), each RG of the plurality of RGs comprising a subset of reclaim units (RUs). The controller receives a request to program a set of data into a first RG of the plurality of RGs and compares a first PEC of the first RG with a second PEC of a second RG of the plurality of RGs. The controller performs wear leveling operations for the set of data requested to be programmed into the first RG using one or more memory components associated with the second RG based on a result of comparing the first PEC of the first RG with the second PEC of the second RG.
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公开(公告)号:US12068034B2
公开(公告)日:2024-08-20
申请号:US17899409
申请日:2022-08-30
Applicant: Micron Technology, Inc.
Inventor: Kishore Kumar Muchherla , Huai-Yuan Tseng , Giovanni Maria Paolucci , Dave Scott Ebsen , James Fitzpatrick , Akira Goda , Jeffrey S. McNeil , Umberto Siciliani , Daniel J. Hubbard , Walter Di Francesco , Michele Incarnati
CPC classification number: G11C16/102 , G11C16/08 , G11C16/3404
Abstract: Exemplary methods, apparatuses, and systems including a programming manager for controlling writing data bits to a memory device. The programming manager receives a first set of data bits for programming to memory. The programming manager writes a first subset of data bits to a first wordline during a first pass of programming. The programming manager writes a second subset of data bits of the first set of data bits to a buffer. The programming manager receives a second set of data bits for programming. The programming manager writes the second subset of data bits of the first set of data bits to the first wordline during a second pass of programming to increase a bit density of memory cells in the first wordline in response to receiving the second set of data bits.
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