公开(公告)号：US08404042B2

公开(公告)日：2013-03-26

申请号：US13564731

申请日：2012-08-02

Applicant: Naho Mizuhara ,  Koji Uematsu ,  Michimasa Miyanaga ,  Keisuke Tanizaki ,  Hideaki Nakahata ,  Seiji Nakahata ,  Takuji Okahisa

Inventor： Naho Mizuhara ,  Koji Uematsu ,  Michimasa Miyanaga ,  Keisuke Tanizaki ,  Hideaki Nakahata ,  Seiji Nakahata ,  Takuji Okahisa

IPC: C30B19/12 ,  C30B25/18

CPC classification number: H01L29/045 ,  C30B19/02 ,  C30B23/025 ,  C30B25/20 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/2003 ,  Y10T428/24752

Abstract: III-nitride crystal composites are made up of especially processed crystal slices cut from III-nitride bulk crystal having, ordinarily, a {0001} major surface and disposed adjoining each other sideways, and of III-nitride crystal epitaxially on the bulk-crystal slices. The slices are arranged in such a way that their major surfaces parallel each other, but are not necessarily flush with each other, and so that the [0001] directions in the slices are oriented in the same way.

Abstract translation: III族氮化物晶体复合材料由通常为{0001}主表面并且彼此侧向彼此相邻并且在本体晶片上外延的III族氮化物晶体的III族氮化物块状晶体切割的特别加工的晶片形成 。 切片被布置成使得它们的主表面彼此平行但不一定彼此齐平，并且使得切片中的[0001]方向以相同的方式取向。

公开(公告)号：US20090236694A1

公开(公告)日：2009-09-24

申请号：US12467297

申请日：2009-05-17

Applicant: Naho Mizuhara ,  Koji Uematsu ,  Michimasa Miyanaga ,  Keisuke Tanizaki ,  Hideaki Nakahata ,  Seiji Nakahata ,  Takuji Okahisa

Inventor： Naho Mizuhara ,  Koji Uematsu ,  Michimasa Miyanaga ,  Keisuke Tanizaki ,  Hideaki Nakahata ,  Seiji Nakahata ,  Takuji Okahisa

IPC: H01L29/20 ,  H01L21/20

CPC classification number: H01L29/045 ,  C30B19/02 ,  C30B23/025 ,  C30B25/20 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/2003 ,  Y10T428/24752

Abstract: The present III-nitride crystal manufacturing method, a method of manufacturing a III-nitride crystal (20) having a major surface (20m) of plane orientation other than {0001}, designated by choice, includes: a step of slicing III-nitride bulk crystal (1) into a plurality of III-nitride crystal substrates (10p), (10q) having major surfaces (10pm), (10qm) of the designated plane orientation; a step of disposing the substrates (10p), (10q) adjoining each other sideways in such a way that the major surfaces (10pm), (10qm) of the substrates (10p), (10q) parallel each other and so that the [0001] directions in the substrates (10p), (10q) are oriented in the same way; and a step of growing III-nitride crystal (20) onto the major surfaces (10pm), (10qm) of the substrates (10p), (10q).

Abstract translation: 本III-氮化物晶体制造方法，通过选择指定的具有除{0001}以外的面取向主面（20m）的III族氮化物晶体（20）的制造方法包括：将III族氮化物晶体 大块晶体（1）分成多个具有指定平面取向的主表面（10pm），（10qm）的III族氮化物晶体基板（10p），（10q） 将基板（10p），（10q），（10q）的主表面（10pm），（10qm）彼此平行的方式设置为彼此相邻的基板（10p），（10q）的步骤， （10p），（10q）的方向相同的方向取向; 以及在衬底（10p），（10q）的主表面（10μm），（10qm）上生长III族氮化物晶体（20）的步骤。

公开(公告)号：US20070096117A1

公开(公告)日：2007-05-03

申请号：US11612481

申请日：2006-12-19

Applicant: Michimasa Miyanaga ,  Koji Uematsu ,  Takuji Okahisa

Inventor： Michimasa Miyanaga ,  Koji Uematsu ,  Takuji Okahisa

IPC: H01L33/00 ,  H01L31/12 ,  H01L29/24 ,  H01L29/26 ,  H01L27/15

CPC classification number: H01L29/2003 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L31/184 ,  H01L33/16 ,  Y10S117/902

Abstract: A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available, by specifying or controlling the local variation in the off-axis angle of the principal surface of the nitride semiconductor substrate. In a nitride semiconductor single-crystal wafer having a flat principal surface, the crystallographic plane orientation of the principal surface of the nitride semiconductor single-crystal wafer varies locally within a predetermined angular range.

Abstract translation: 可以通过指定或控制氮化物半导体衬底的主表面的偏轴角度的局部变化来获得具有优选用于制造各种氮化物半导体器件的性质的氮化物半导体衬底。 在具有平坦主表面的氮化物半导体单晶晶片中，氮化物半导体单晶晶片的主表面的晶面取向在预定角度范围内局部变化。

公开(公告)号：US08258051B2

公开(公告)日：2012-09-04

申请号：US12467297

申请日：2009-05-17

Applicant: Naho Mizuhara ,  Koji Uematsu ,  Michimasa Miyanaga ,  Keisuke Tanizaki ,  Hideaki Nakahata ,  Seiji Nakahata ,  Takuji Okahisa

Inventor： Naho Mizuhara ,  Koji Uematsu ,  Michimasa Miyanaga ,  Keisuke Tanizaki ,  Hideaki Nakahata ,  Seiji Nakahata ,  Takuji Okahisa

IPC: H01L21/20 ,  C30B19/12 ,  C30B25/18

CPC classification number: H01L29/045 ,  C30B19/02 ,  C30B23/025 ,  C30B25/20 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/2003 ,  Y10T428/24752

Abstract: The present III-nitride crystal manufacturing method, a method of manufacturing a III-nitride crystal (20) having a major surface (20m) of plane orientation other than {0001}, designated by choice, includes: a step of slicing III-nitride bulk crystal (1) into a plurality of III-nitride crystal substrates (10p), (10q) having major surfaces (10pm), (10qm) of the designated plane orientation; a step of disposing the substrates (10p), (10q) adjoining each other sideways in such a way that the major surfaces (10pm), (10qm) of the substrates (10p), (10q) parallel each other and so that the [0001] directions in the substrates (10p), (10q) are oriented in the same way; and a step of growing III-nitride crystal (20) onto the major surfaces (10pm), (10qm) of the substrates (10p), (10q).

Abstract translation: 本III-氮化物晶体制造方法，通过选择指定的具有除{0001}以外的面取向主面（20m）的III族氮化物晶体（20）的制造方法包括：将III族氮化物晶体 大块晶体（1）分成多个具有指定平面取向的主表面（10pm），（10qm）的III族氮化物晶体基板（10p），（10q） 将基板（10p），（10q），（10q）的主表面（10pm），（10qm）彼此平行的方式设置为彼此相邻的基板（10p），（10q）的步骤， （10p），（10q）的方向相同的方向取向; 以及在衬底（10p），（10q）的主表面（10μm），（10qm）上生长III族氮化物晶体（20）的步骤。

公开(公告)号：US20120315445A1

公开(公告)日：2012-12-13

申请号：US13564731

申请日：2012-08-02

Applicant: Naho Mizuhara ,  Koji Uematsu ,  Michimasa Miyanaga ,  Keisuke Tanizaki ,  Hideaki Nakahata ,  Seiji Nakahata ,  Takuji Okahisa

Inventor： Naho Mizuhara ,  Koji Uematsu ,  Michimasa Miyanaga ,  Keisuke Tanizaki ,  Hideaki Nakahata ,  Seiji Nakahata ,  Takuji Okahisa

IPC: B32B5/00

CPC classification number: H01L29/045 ,  C30B19/02 ,  C30B23/025 ,  C30B25/20 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/2003 ,  Y10T428/24752

Abstract: III-nitride crystal composites are made up of especially processed crystal slices cut from III-nitride bulk crystal having, ordinarily, a {0001} major surface and disposed adjoining each other sideways, and of III-nitride crystal epitaxially on the bulk-crystal slices. The slices are arranged in such a way that their major surfaces parallel each other, but are not necessarily flush with each other, and so that the [0001] directions in the slices are oriented in the same way.

Abstract translation: III族氮化物晶体复合材料由通常为{0001}主表面并且彼此侧向彼此相邻并且在本体晶片上外延的III族氮化物晶体的III族氮化物块状晶体切割的特别加工的晶片形成 。 切片被布置成使得它们的主表面彼此平行但不一定彼此齐平，并且使得切片中的[0001]方向以相同的方式取向。

公开(公告)号：US20080217745A1

公开(公告)日：2008-09-11

申请号：US12122730

申请日：2008-05-19

Applicant: Michimasa Miyanaga ,  Koji Uematsu ,  Takuji Okahisa

Inventor： Michimasa Miyanaga ,  Koji Uematsu ,  Takuji Okahisa

IPC: H01L29/04

CPC classification number: H01L29/2003 ,  H01L29/045 ,  H01L33/16

Abstract: A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available, by specifying or controlling the local variation in the off-axis angle of the principal surface of the nitride semiconductor substrate. The substrate, being misoriented, is manufactured to have an off-axis angle distribution across its principal surface such that variation Δθ in the off-axis angle is continuous within a predetermined angular range.

Abstract translation: 可以通过指定或控制氮化物半导体衬底的主表面的偏轴角度的局部变化来获得具有优选用于制造各种氮化物半导体器件的性质的氮化物半导体衬底。 被制成偏心的衬底在其主表面上具有偏轴角分布，使得离轴角度的变化Deltatheta在预定角度范围内是连续的。

公开(公告)号：US07390359B2

公开(公告)日：2008-06-24

申请号：US11612481

申请日：2006-12-19

Applicant: Michimasa Miyanaga ,  Koji Uematsu ,  Takuji Okahisa

Inventor： Michimasa Miyanaga ,  Koji Uematsu ,  Takuji Okahisa

IPC: C30B25/12

CPC classification number: H01L29/2003 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L31/184 ,  H01L33/16 ,  Y10S117/902

Abstract: A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available, by specifying or controlling the local variation in the off-axis angle of the principal surface of the nitride semiconductor substrate. In a nitride semiconductor single-crystal wafer having a flat principal surface, the crystallographic plane orientation of the principal surface of the nitride semiconductor single-crystal wafer varies locally within a predetermined angular range.

Abstract translation: 可以通过指定或控制氮化物半导体衬底的主表面的偏轴角度的局部变化来获得具有优选用于制造各种氮化物半导体器件的性质的氮化物半导体衬底。 在具有平坦主表面的氮化物半导体单晶晶片中，氮化物半导体单晶晶片的主表面的晶面取向在预定角度范围内局部变化。

公开(公告)号：US08363326B2

公开(公告)日：2013-01-29

申请号：US13001723

申请日：2009-06-25

Applicant: Satoshi Arakawa ,  Takashi Sakurada ,  Yoshiyuki Yamamoto ,  Issei Satoh ,  Keisuke Tanizaki ,  Hideaki Nakahata ,  Naho Mizuhara ,  Michimasa Miyanaga

Inventor： Satoshi Arakawa ,  Takashi Sakurada ,  Yoshiyuki Yamamoto ,  Issei Satoh ,  Keisuke Tanizaki ,  Hideaki Nakahata ,  Naho Mizuhara ,  Michimasa Miyanaga

IPC: G02B1/02

CPC classification number: G02B1/02 ,  C30B23/025 ,  C30B29/403 ,  C30B29/406 ,  G02B3/00 ,  G02B13/143 ,  Y10T428/21 ,  Y10T428/24355

Abstract: A method of producing an AlxGa(1-x)N (0

Abstract translation: 制造本发明的Al x Ga（1-x）N（0

公开(公告)号：US08361226B2

公开(公告)日：2013-01-29

申请号：US12067936

申请日：2007-03-22

Applicant: Michimasa Miyanaga ,  Naho Mizuhara ,  Shinsuke Fujiwara ,  Hideaki Nakahata ,  Tomohiro Kawase

Inventor： Michimasa Miyanaga ,  Naho Mizuhara ,  Shinsuke Fujiwara ,  Hideaki Nakahata ,  Tomohiro Kawase

IPC: C30B21/02

CPC classification number: C30B29/403 ,  C30B23/00

Abstract: This III-nitride single-crystal growth method, being a method of growing a AlxGa1-xN single crystal (4) by sublimation, is furnished with a step of placing source material (1) in a crucible (12), and a step of sublimating the source material (1) to grow AlxGa1-xN (0

Abstract translation: 作为通过升华生长Al x Ga 1-x N单晶（4）的方法的III族氮化物单晶生长方法具有将源材料（1）放置在坩埚（12）中的步骤，并且 使源材料（1）升华以在坩埚（12）中生长Al x Ga 1-x N（0

公开(公告)号：US08293012B2

公开(公告)日：2012-10-23

申请号：US12305969

申请日：2007-06-15

Applicant: Michimasa Miyanaga ,  Naho Mizuhara ,  Hideaki Nakahata

Inventor： Michimasa Miyanaga ,  Naho Mizuhara ,  Hideaki Nakahata

IPC: C30B9/00 ,  B32B3/00

CPC classification number: C30B29/403 ,  C30B23/00 ,  C30B23/025

Abstract: Affords AlxGa1-xN crystal growth methods, as well as AlxGa1-xN crystal substrates, wherein bulk, low-dislocation-density crystals are obtained.The AlxGa1-xN crystal (0

Abstract translation: 提供Al x Ga 1-x N晶体生长方法，以及Al x Ga 1-x N晶体衬底，其中获得体，低位错密度晶体。 Al x Ga 1-x N晶体（0