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    Nitride Semiconductor Crystal Manufacturing Apparatus, Nitride Semiconductor Crystal Manufacturing Method, and Nitride Semiconductor Crystal
    5.
    发明申请
    Nitride Semiconductor Crystal Manufacturing Apparatus, Nitride Semiconductor Crystal Manufacturing Method, and Nitride Semiconductor Crystal 失效
    氮化物半导体晶体制造装置，氮化物半导体晶体制造方法和氮化物半导体晶体

    公开(公告)号：US20110171462A1

    公开(公告)日：2011-07-14

    申请号：US13060276

    申请日：2010-01-20

    Applicant: Issei Satoh ,  Michimasa Miyanaga ,  Yoshiyuki Yamamoto ,  Hideaki Nakahata

    Inventor： Issei Satoh ,  Michimasa Miyanaga ,  Yoshiyuki Yamamoto ,  Hideaki Nakahata

    IPC: C01B21/072 ,  C23C16/448 ,  C23C16/34 ,  C30B23/00 ,  B32B5/00

    CPC classification number: C30B23/066 ,  C30B29/403

    Abstract: Affords nitride semiconductor crystal manufacturing apparatuses that are durable and that are for manufacturing nitride semiconductor crystal in which the immixing of impurities from outside the crucible is kept under control, and makes methods for manufacturing such nitride semiconductor crystal, and the nitride semiconductor crystal itself, available.A nitride semiconductor crystal manufacturing apparatus (100) is furnished with a crucible (101), a heating unit (125), and a covering component (110). The crucible (101) is where, interiorly, source material (17) is disposed. The heating unit (125) is disposed about the outer periphery of the crucible (101), where it heats the crucible (101) interior. The covering component (110) is arranged in between the crucible (101) and the heating unit (125). The covering component (110) includes a first layer (111) formed along the side opposing the crucible (101), and made of a metal whose melting point is higher than that of the source material (17), and a second layer (112) formed along the outer periphery of the first layer (111), and made of a carbide of the metal that constitutes the first layer (111).

    Abstract translation: 使氮化物半导体晶体制造装置耐久，并且用于制造氮化物半导体晶体，其中坩埚外部杂质的固定被控制，并且制造这种氮化物半导体晶体的方法和氮化物半导体晶体本身可用 。 氮化物半导体晶体制造装置（100）具有坩埚（101），加热单元（125）和覆盖部件（110）。 坩埚（101）内部设置有源材料（17）。 加热单元（125）围绕坩埚（101）的外周设置，其中坩埚（101）内部加热。 覆盖部件（110）布置在坩埚（101）和加热单元（125）之间。 覆盖部件（110）包括沿与坩埚（101）相对的一侧形成的由熔点高于源材料（17）的金属制成的第一层（111）和第二层（112） ）沿着第一层（111）的外周形成，并且由构成第一层（111）的金属的碳化物构成。

    Method for Growing Aluminum Nitride Crystal, Process for Producing Aluminum Nitride Crystal, and Aluminum Nitride Crystal
    6.
    发明申请
    Method for Growing Aluminum Nitride Crystal, Process for Producing Aluminum Nitride Crystal, and Aluminum Nitride Crystal 有权
    生产氮化铝晶体的方法，生产氮化铝晶体的方法和氮化铝晶体

    公开(公告)号：US20100143748A1

    公开(公告)日：2010-06-10

    申请号：US12595957

    申请日：2008-12-19

    Applicant: Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

    Inventor： Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

    IPC: B32B9/04 ,  C30B23/06

    CPC classification number: C30B29/403 ,  C30B25/02 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658

    Abstract: Methods of growing and manufacturing aluminum nitride crystal, and aluminum nitride crystal produced by the methods. Preventing sublimation of the starting substrate allows aluminum nitride crystal of excellent crystallinity to be grown at improved growth rates. The aluminum nitride crystal growth method includes the following steps. Initially, a laminar baseplate is prepared, furnished with a starting substrate having a major surface and a back side, a first layer formed on the back side, and a second layer formed on the first layer. Aluminum nitride crystal is then grown onto the major surface of the starting substrate by vapor deposition. The first layer is made of a substance that at the temperatures at which the aluminum nitride crystal is grown is less liable to sublimate than the starting substrate. The second layer is made of a substance whose thermal conductivity is higher than that of the first layer.

    Abstract translation: 生产和制造氮化铝晶体的方法和通过这些方法生产的氮化铝晶体。 防止起始衬底的升华允许以提高的生长速率生长具有优异结晶度的氮化铝晶体。 氮化铝晶体生长方法包括以下步骤。 首先，制备层状基板，配备有具有主表面和背面的起始衬底，在背面形成的第一层和形成在第一层上的第二层。 然后通过气相沉积将氮化铝晶体生长到起始衬底的主表面上。 第一层由在生长氮化铝晶体的温度下比起始衬底更不易升华的物质制成。 第二层由导热率高于第一层的物质制成。

    Nitride Semiconductor Wafer
    8.
    发明申请
    Nitride Semiconductor Wafer 有权
    氮化物半导体晶圆

    公开(公告)号：US20070096117A1

    公开(公告)日：2007-05-03

    申请号：US11612481

    申请日：2006-12-19

    Applicant: Michimasa Miyanaga ,  Koji Uematsu ,  Takuji Okahisa

    Inventor： Michimasa Miyanaga ,  Koji Uematsu ,  Takuji Okahisa

    IPC: H01L33/00 ,  H01L31/12 ,  H01L29/24 ,  H01L29/26 ,  H01L27/15

    CPC classification number: H01L29/2003 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L31/184 ,  H01L33/16 ,  Y10S117/902

    Abstract: A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available, by specifying or controlling the local variation in the off-axis angle of the principal surface of the nitride semiconductor substrate. In a nitride semiconductor single-crystal wafer having a flat principal surface, the crystallographic plane orientation of the principal surface of the nitride semiconductor single-crystal wafer varies locally within a predetermined angular range.

    Abstract translation: 可以通过指定或控制氮化物半导体衬底的主表面的偏轴角度的局部变化来获得具有优选用于制造各种氮化物半导体器件的性质的氮化物半导体衬底。 在具有平坦主表面的氮化物半导体单晶晶片中，氮化物半导体单晶晶片的主表面的晶面取向在预定角度范围内局部变化。

    Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystal
    10.
    发明授权
    Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystal 有权
    生产氮化铝晶体的方法，用于生产氮化铝晶体的方法和氮化铝晶体

    公开(公告)号：US08323402B2

    公开(公告)日：2012-12-04

    申请号：US12595957

    申请日：2008-12-19

    Applicant: Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

    Inventor： Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

    IPC: C30B1/10

    CPC classification number: C30B29/403 ,  C30B25/02 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658

    Abstract: Methods of growing and manufacturing aluminum nitride crystal, and aluminum nitride crystal produced by the methods. Preventing sublimation of the starting substrate allows aluminum nitride crystal of excellent crystallinity to be grown at improved growth rates. The aluminum nitride crystal growth method includes the following steps. Initially, a laminar baseplate is prepared, furnished with a starting substrate having a major surface and a back side, a first layer formed on the back side, and a second layer formed on the first layer. Aluminum nitride crystal is then grown onto the major surface of the starting substrate by vapor deposition. The first layer is made of a substance that at the temperatures at which the aluminum nitride crystal is grown is less liable to sublimate than the starting substrate. The second layer is made of a substance whose thermal conductivity is higher than that of the first layer.

    Abstract translation: 生产和制造氮化铝晶体的方法和通过这些方法生产的氮化铝晶体。 防止起始衬底的升华允许以提高的生长速率生长具有优异结晶度的氮化铝晶体。 氮化铝晶体生长方法包括以下步骤。 首先，制备层状基板，配备有具有主表面和背面的起始衬底，在背面形成的第一层和形成在第一层上的第二层。 然后通过气相沉积将氮化铝晶体生长到起始衬底的主表面上。 第一层由在生长氮化铝晶体的温度下比起始衬底更不易升华的物质制成。 第二层由导热率高于第一层的物质制成。

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