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    Group III nitride single crystal and method of its growth
    1.
    发明授权
    Group III nitride single crystal and method of its growth 有权
    III族氮化物单晶及其生长方法

    公开(公告)号：US08377204B2

    公开(公告)日：2013-02-19

    申请号：US12305001

    申请日：2006-06-16

    Applicant: Michimasa Miyanaga ,  Naho Mizuhara ,  Shinsuke Fujiwara ,  Seiji Nakahata ,  Hideaki Nakahata

    Inventor： Michimasa Miyanaga ,  Naho Mizuhara ,  Shinsuke Fujiwara ,  Seiji Nakahata ,  Hideaki Nakahata

    IPC: C30B23/00 ,  B32B5/16

    CPC classification number: C30B23/005 ,  C30B29/403 ,  C30B35/002 ,  Y10T428/2982

    Abstract: Affords methods of growing III nitride single crystals of favorable crystallinity with excellent reproducibility, and the III nitride crystals obtained by the growth methods. One method grows a III nitride single crystal (3) inside a crystal-growth vessel (11), the method being characterized in that a porous body formed from a metal carbide, whose porosity is between 0.1% and 70% is employed in at least a portion of the crystal-growth vessel (11). Employing the crystal-growth vessel (11) makes it possible to discharge from 1% to 50% of a source gas (4) inside the crystal-growth vessel (11) via the pores in the porous body to the outside of the crystal-growth vessel (11).

    Abstract translation: 提供具有良好重现性的具有良好结晶度的III族氮化物单晶的方法和通过生长方法获得的III族氮化物晶体。 一种方法是在晶体生长容器（11）的内部生长III族氮化物单晶（3），其特征在于，至少使用由孔隙率在0.1％至70％之间的金属碳化物形成的多孔体 晶体生长容器（11）的一部分。 采用晶体生长容器（11）使得可以通过多孔体中的孔将晶体生长容器（11）内的源气体（4）的1％〜50％排出到晶体生长容器 生长容器（11）。

    AlN Crystal and Method of Its Growth
    3.
    发明申请
    AlN Crystal and Method of Its Growth 审中-公开
    AlN晶体及其生长方法

    公开(公告)号：US20100242833A1

    公开(公告)日：2010-09-30

    申请号：US12524575

    申请日：2008-11-13

    Applicant: Issei Satoh ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Michimasa Miyanaga ,  Hideaki Nakahata

    Inventor： Issei Satoh ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Michimasa Miyanaga ,  Hideaki Nakahata

    IPC: C30B23/02

    CPC classification number: C30B29/403 ,  C30B23/00 ,  C30B23/025 ,  C30B25/00 ,  C30B25/18

    Abstract: The present invention makes available an AlN crystal growth method enabling large-area, thick AlN crystal to be stably grown. An AlN crystal growth method of the present invention is provided with a step of preparing an SiC substrate (4) having a major face (4m) with a 0 cm−2 density of micropipes (4mp) having tubal diameters of down to 1000 μm, and a not greater than 0.1 cm−2 density of micropipes (4mp) having tubal diameters of between 100 μm and less than 1000 μm; and a step of growing AlN crystal (5) onto the major face (4m) by vapor-phase deposition.

    Abstract translation: 本发明提供能够稳定生长大面积厚AlN晶体的AlN晶体生长方法。 本发明的AlN晶体生长方法具有如下步骤：制备具有0cm -2密度的具有至少1000μm的输卵管直径的微管（4mp）的主面（4m）的SiC衬底（4） 和不大于0.1cm -2密度的具有100μm至小于1000μm的输卵管直径的微管（4mp）; 以及通过气相沉积将AlN晶体（5）生长到主面（4m）上的步骤。

    Method for Growing Aluminum Nitride Crystal, Process for Producing Aluminum Nitride Crystal, and Aluminum Nitride Crystal
    9.
    发明申请
    Method for Growing Aluminum Nitride Crystal, Process for Producing Aluminum Nitride Crystal, and Aluminum Nitride Crystal 有权
    生产氮化铝晶体的方法，生产氮化铝晶体的方法和氮化铝晶体

    公开(公告)号：US20100143748A1

    公开(公告)日：2010-06-10

    申请号：US12595957

    申请日：2008-12-19

    Applicant: Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

    Inventor： Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

    IPC: B32B9/04 ,  C30B23/06

    CPC classification number: C30B29/403 ,  C30B25/02 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658

    Abstract: Methods of growing and manufacturing aluminum nitride crystal, and aluminum nitride crystal produced by the methods. Preventing sublimation of the starting substrate allows aluminum nitride crystal of excellent crystallinity to be grown at improved growth rates. The aluminum nitride crystal growth method includes the following steps. Initially, a laminar baseplate is prepared, furnished with a starting substrate having a major surface and a back side, a first layer formed on the back side, and a second layer formed on the first layer. Aluminum nitride crystal is then grown onto the major surface of the starting substrate by vapor deposition. The first layer is made of a substance that at the temperatures at which the aluminum nitride crystal is grown is less liable to sublimate than the starting substrate. The second layer is made of a substance whose thermal conductivity is higher than that of the first layer.

    Abstract translation: 生产和制造氮化铝晶体的方法和通过这些方法生产的氮化铝晶体。 防止起始衬底的升华允许以提高的生长速率生长具有优异结晶度的氮化铝晶体。 氮化铝晶体生长方法包括以下步骤。 首先，制备层状基板，配备有具有主表面和背面的起始衬底，在背面形成的第一层和形成在第一层上的第二层。 然后通过气相沉积将氮化铝晶体生长到起始衬底的主表面上。 第一层由在生长氮化铝晶体的温度下比起始衬底更不易升华的物质制成。 第二层由导热率高于第一层的物质制成。

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