Invention Grant
US08258051B2 Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal
有权
制造III族氮化物晶体的方法以及利用晶体的半导体器件
- Patent Title: Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal
- Patent Title (中): 制造III族氮化物晶体的方法以及利用晶体的半导体器件
-
Application No.: US12467297Application Date: 2009-05-17
-
Publication No.: US08258051B2Publication Date: 2012-09-04
- Inventor: Naho Mizuhara , Koji Uematsu , Michimasa Miyanaga , Keisuke Tanizaki , Hideaki Nakahata , Seiji Nakahata , Takuji Okahisa
- Applicant: Naho Mizuhara , Koji Uematsu , Michimasa Miyanaga , Keisuke Tanizaki , Hideaki Nakahata , Seiji Nakahata , Takuji Okahisa
- Applicant Address: JP Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka
- Agent James W. Judge
- Priority: JP2006-311622 20061117; JP2007-258567 20071002
- Main IPC: H01L21/20
- IPC: H01L21/20 ; C30B19/12 ; C30B25/18
Abstract:
The present III-nitride crystal manufacturing method, a method of manufacturing a III-nitride crystal (20) having a major surface (20m) of plane orientation other than {0001}, designated by choice, includes: a step of slicing III-nitride bulk crystal (1) into a plurality of III-nitride crystal substrates (10p), (10q) having major surfaces (10pm), (10qm) of the designated plane orientation; a step of disposing the substrates (10p), (10q) adjoining each other sideways in such a way that the major surfaces (10pm), (10qm) of the substrates (10p), (10q) parallel each other and so that the [0001] directions in the substrates (10p), (10q) are oriented in the same way; and a step of growing III-nitride crystal (20) onto the major surfaces (10pm), (10qm) of the substrates (10p), (10q).
Public/Granted literature
- US20090236694A1 Method of Manufacturing III-Nitride Crystal, and Semiconductor Device Utilizing the Crystal Public/Granted day:2009-09-24
Information query
IPC分类:
