公开(公告)号：US08430969B2

公开(公告)日：2013-04-30

申请号：US12823485

申请日：2010-06-25

申请人： Mark A Gerber ,  Kurt P Wachtler

发明人： Mark A Gerber ,  Kurt P Wachtler

IPC分类号： B08B7/00

CPC分类号： H01L25/50 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06558 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2224/81 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A process flow exposing and cleaning contact surfaces employing a liquid cleaning agent such as flux to penetrate the interface between the glassy coats and the surface of metal and to delaminate the coats from the metal, and then, at elevated temperatures, to use the agent's vapor pressure to break up the glassy coats into smaller pieces. The glassy coats are prevented by their low density to penetrate into the molten solder. Finally, at ambient temperature, the floating filler debris is water-washed and rinsed away. Cleaning agents include low-viscosity liquids (oils) and flux, which do not decompose at elevated temperatures and are mixed with components operable to provide, at the elevated temperatures, the fumes for sufficient vapor pressure to break up and dislodge the coats from the metal contacts.

摘要翻译： 使用液体清洁剂（例如助熔剂）暴露和清洁接触表面的工艺流程以渗透玻璃涂层和金属表面之间的界面并使涂层从金属分层，然后在升高的温度下使用试剂的蒸气 将玻璃大衣分解成更小的部分的压力。 通过其低密度防止玻璃状涂层渗透到熔融焊料中。 最后，在环境温度下，漂浮的填料碎片进行水洗和冲洗。 清洁剂包括低粘度液体（油）和助熔剂，其在升高的温度下不分解并与可操作以在升高的温度下提供足够的蒸气压使烟雾分散并从金属中除去的组分混合 联系人

公开(公告)号：US08133761B2

公开(公告)日：2012-03-13

申请号：US12486596

申请日：2009-06-17

申请人： Mark A Gerber ,  Kurt P Wachtler ,  Abram M. Castro

发明人： Mark A Gerber ,  Kurt P Wachtler ,  Abram M. Castro

IPC分类号： H01L21/44

CPC分类号： H01L23/49811 ,  H01L21/4853 ,  H01L23/3128 ,  H01L23/5385 ,  H01L23/5389 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/16225 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06572 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19011

摘要： A semiconductor system (200) of one or more semiconductor interposers (201) with a certain dimension (210), conductive vias (212) extending from the first to the second surface, with terminals and attached non-reflow metal studs (215) at the ends of the vias. A semiconducting interposer surface may include discrete electronic components or an integrated circuit. One or more semiconductor chips (202, 203) have a dimension (220, 230) narrower than the interposer dimension, and an active surface with terminals and non-reflow metal studs (224, 234). One chip is flip-attached to the first interposer surface, and another chip to the second interposer surface, so that the interposer dimension projects over the chip dimension. An insulating substrate (204) has terminals and reflow bodies (242) to connect to the studs of the projecting interposer.

摘要翻译： 具有一定尺寸（210）的一个或多个半导体插入件（201）的半导体系统（200），从第一表面延伸到第二表面的导电通孔（212），端子和附接的非回流金属螺柱（215）在 通孔的末端。 半导体插入器表面可以包括分立的电子部件或集成电路。 一个或多个半导体芯片（202,203）具有比插入件尺寸窄的尺寸（220,230）以及具有端子和非回流金属柱（224,234）的活性表面。 一个芯片被翻转连接到第一插入器表面，另一个芯片被翻转连接到第二插入器表面，使得插入器尺寸突出在芯片尺寸上。 绝缘基板（204）具有端子和回流体（242），以连接到突出插入件的螺柱。

公开(公告)号：US07776653B2

公开(公告)日：2010-08-17

申请号：US12497170

申请日：2009-07-02

申请人： David N Walter ,  Duy-Loan T Le ,  Mark A Gerber

发明人： David N Walter ,  Duy-Loan T Le ,  Mark A Gerber

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L24/05 ,  H01L21/563 ,  H01L23/3128 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/85 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/1134 ,  H01L2224/1308 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/4845 ,  H01L2224/48471 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/73203 ,  H01L2224/73207 ,  H01L2224/73265 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/85045 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06579 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A device has a first semiconductor chip (101) with contact pads in an interior first set (102) and a peripheral second set (103). A deformed sphere (104) of non-reflow metal such as gold is placed on each contact pad of the first and second sets. At least one additional deformed sphere (105) is placed on the first set pads, forming column-shaped spacers. The first chip is attached to a substrate (110) with a chip attachment location and a third set of contact pads (112) near the location. Low profile bond wires (130) span between the pads of the third set and the second set. A second semiconductor chip (140) of a size has a fourth set of contact pads (141) at locations matching the first set pads. The second chip is placed over the first chip so that the fourth set pads are aligned with the spacers on the matching first set pads, and at least one edge of the second chip overhangs the sphere on at least one pad of the second set. A reflow metal (142) bonds the spacers to the second chip, while the spacers space the first and second chips by a gap (105a) wide enough for placing the wire spans to the second set pads.

摘要翻译： 器件具有在内部第一组（102）和外围第二组（103）中具有接触垫的第一半导体芯片（101）。 非回流金属（例如金）的变形球体（104）被放置在第一和第二组的每个接触垫上。 至少一个附加的变形球体（105）被放置在第一组垫上，形成柱状间隔件。 第一芯片附接到具有芯片附接位置的基板（110）和位于该位置附近的第三组接触焊盘（112）。 薄型结合线（130）跨越第三组和第二组的焊盘之间。 尺寸的第二半导体芯片（140）在与第一组焊盘匹配的位置处具有第四组接触焊盘（141）。 第二芯片放置在第一芯片上，使得第四组焊盘与匹配的第一组焊盘上的间隔件对准，并且第二芯片的至少一个边缘在第二组的至少一个焊盘上悬垂在球体上。 回流金属（142）将间隔物连接到第二芯片，而间隔物将第一和第二芯片间隔开足够宽的间隙（105a），以将导线跨距放置到第二固定焊盘。

公开(公告)号：US07790509B2

公开(公告)日：2010-09-07

申请号：US12330950

申请日：2008-12-09

申请人： Mark A Gerber

发明人： Mark A Gerber

IPC分类号： H01L21/44

CPC分类号： H01L21/563 ,  C09J163/00 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： Attaching a semiconductor chip to a substrate by applying mechanical vibrations (150) to a polymeric compound (130) and the contacting areas (114, 124) of a first (113) and a second (121) metallic member immersed in the compound, while the two metallic members approach (140) each other until they touch. The mechanical vibration causes displacements of the first member relative to the second member, and the vibration includes displacements (150) oriented at right angles to the direction (140) of the approach. The polymeric compound (130) includes a non-conductive adhesive resin paste (NCP) and filler particles; the paste is deposited before the attaching step. The first member (113) is affixed to the chip and the second member (121) to the substrate.

摘要翻译： 将半导体芯片通过向聚合物（130）和浸入化合物中的第一（113）和第二（121）金属构件的接触区域（114,124）施加机械振动（150），同时 两个金属构件相互接近（140）直到它们接触。 机械振动引起第一构件相对于第二构件的位移，并且振动包括与接近方向（140）成直角定向的位移（150）。 聚合物（130）包括非导电粘合树脂浆料（NCP）和填料颗粒; 在附着步骤之前将浆料沉积。 第一构件（113）固定到芯片和第二构件（121）到基板。

公开(公告)号：US08304285B2

公开(公告)日：2012-11-06

申请号：US13080435

申请日：2011-04-05

申请人： Mark A Gerber ,  David N Walter

发明人： Mark A Gerber ,  David N Walter

IPC分类号： H01L21/60

CPC分类号： H01L23/49833 ,  H01L21/561 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  Y10T29/5317 ,  H01L2224/81 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device with a sheet-like insulating substrate (101) integral with two or more patterned layers of conductive lines and vias, a chip attached to an assembly site, and contact pads (103) in pad locations has an encapsulated region on the top surface of the substrate, extending to the edge of the substrate, enclosing the chip, and having contact apertures (703) at the pad locations for external communication with the pad metal surfaces. The apertures may have not-smooth sidewall surfaces and may be filled with solder material (704) to contact the pads. Metal-filled surface grooves (710) in the encapsulated region, with smooth groove bottom and sidewalls, are selected to serve as customized routing interconnections, or redistribution lines, between selected apertures and thus to facilitate the coupling with another semiconductor device to form a package-on-package assembly.

摘要翻译： 具有与导电线和通孔的两个或多个图案化层成一体的片状绝缘基板（101）的半导体器件，附接到组装位置的芯片和焊盘位置中的接触焊盘（103）在顶部具有封装区域 衬底的表面，延伸到衬底的边缘，封装芯片，并且在焊盘位置处具有用于与衬垫金属表面进行外部连通的接触孔（703）。 孔可以具有不光滑的侧壁表面，并且可以用焊料材料（704）填充以接触焊盘。 选择具有光滑凹槽底部和侧壁的封装区域中的金属填充表面凹槽（710）用作所选择的孔之间的定制路由互连或再分配线，并且因此有助于与另一半导体器件的耦合以形成封装 - 包装组装。