公开(公告)号：US08721908B2

公开(公告)日：2014-05-13

申请号：US14047560

申请日：2013-10-07

Applicant: Lam Research Corporation

Inventor： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Gregory Sexton ,  William S. Kennedy

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC classification number: H01L21/3065 ,  H01L21/02087 ,  H01L21/67069 ,  H01L21/6838

Abstract: A bevel etcher incorporating a vacuum chuck used for cleaning the bevel edge and for reducing the bending curvature of a semiconductor substrate. The bevel etcher includes a vacuum chuck and a plasma generation unit which energizes process gas into a plasma state. The vacuum chuck includes a chuck body and a support ring. The top surface of the chuck body and inner periphery of the support ring form a vacuum region enclosed by the bottom surface of a substrate mounted on the support ring. A vacuum pump evacuates the vacuum region during operation. The vacuum chuck is operative to hold the substrate in place by the pressure difference between the top and bottom surfaces of the substrate. The pressure difference also generates a bending force to reduce the bending curvature of the substrate.

Abstract translation: 包括用于清洁斜边缘并用于减小半导体衬底的弯曲曲率的真空吸盘的斜面蚀刻机。 斜面蚀刻机包括真空吸盘和等离子体产生单元，其将处理气体激发成等离子体状态。 真空吸盘包括卡盘主体和支撑环。 卡盘体的上表面和支撑环的内周形成由安装在支撑环上的基板的底面包围的真空区域。 真空泵在运行期间抽空真空区域。 真空吸盘可操作以通过衬底的顶表面和底表面之间的压力差将衬底保持在适当的位置。 压差也产生弯曲力以减小基板的弯曲曲率。

公开(公告)号：US10937634B2

公开(公告)日：2021-03-02

申请号：US14046206

申请日：2013-10-04

Applicant: Lam Research Corporation

Inventor： Jack Chen ,  Adam Liron ,  Gregory Sexton

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67

Abstract: A bevel etcher for cleaning a bevel edge of a semiconductor substrate with plasma includes a lower electrode assembly having a lower support having a cylindrical top portion. An upper dielectric component is disposed above the lower electrode assembly having a cylindrical bottom portion opposing the top portion of the lower support. A tunable upper plasma exclusion zone (PEZ) ring surrounds the bottom portion of the dielectric component, wherein a lower surface of the tunable upper PEZ ring includes an upwardly tapered outer portion extending outwardly from the bottom portion of the upper dielectric component, wherein a vertical height of an adjustable gap between the lower surface of the upper PEZ ring and an upper surface of a substrate supported on the lower support can be increased or decreased such that the extent of the bevel edge of the substrate to be cleaned by the plasma can respectively be adjusted radially inward or radially outward. At least one radio frequency (RF) power source is adapted to energize process gas into the plasma during a bevel edge cleaning process.

公开(公告)号：US20140038418A1

公开(公告)日：2014-02-06

申请号：US14047560

申请日：2013-10-07

Applicant: Lam Research Corporation

Inventor： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Gregory Sexton ,  William S. Kennedy

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01L21/02087 ,  H01L21/67069 ,  H01L21/6838

Abstract: A bevel etcher incorporating a vacuum chuck used for cleaning the bevel edge and for reducing the bending curvature of a semiconductor substrate. The bevel etcher includes a vacuum chuck and a plasma generation unit which energizes process gas into a plasma state. The vacuum chuck includes a chuck body and a support ring. The top surface of the chuck body and inner periphery of the support ring form a vacuum region enclosed by the bottom surface of a substrate mounted on the support ring. A vacuum pump evacuates the vacuum region during operation. The vacuum chuck is operative to hold the substrate in place by the pressure difference between the top and bottom surfaces of the substrate. The pressure difference also generates a bending force to reduce the bending curvature of the substrate.

Abstract translation: 包括用于清洁斜边缘并用于减小半导体衬底的弯曲曲率的真空吸盘的斜面蚀刻机。 斜面蚀刻机包括真空吸盘和等离子体产生单元，其将处理气体激发成等离子体状态。 真空吸盘包括卡盘主体和支撑环。 卡盘体的上表面和支撑环的内周形成由安装在支撑环上的基板的底面包围的真空区域。 真空泵在运行期间抽空真空区域。 真空吸盘可操作以通过衬底的顶表面和底表面之间的压力差将衬底保持在适当的位置。 压差也产生弯曲力以减小基板的弯曲曲率。

公开(公告)号：US11756771B2

公开(公告)日：2023-09-12

申请号：US17162097

申请日：2021-01-29

Applicant: LAM RESEARCH CORPORATION

Inventor： Jack Chen ,  Adam Liron ,  Gregory Sexton

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01J37/32385 ,  H01J37/32091 ,  H01J37/32642 ,  H01L21/02087 ,  H01L21/67069 ,  Y10T29/49817

Abstract: A tunable upper plasma exclusion zone (PEZ) ring adjusts a distance of plasma during processing in a processing chamber and includes: a lower surface that includes: a horizontal portion; and an upwardly tapered outer portion that is conical and that extends outwardly and upwardly from the horizontal portion at an upward taper angle of about 5° to 50° with respect to the horizontal portion, where an outer diameter of the upwardly tapered outer portion is greater than 300 millimeters (mm), and where an inner diameter where the upwardly tapered outer portion begins to extend upwardly is less than 300 mm. A controller is to, during processing of a 300 mm circular substrate, adjust the distance of plasma for treatment of the 300 mm circular substrate at least one of radially inward and radially outward using the tunable upper PEZ ring.

公开(公告)号：US20150340225A1

公开(公告)日：2015-11-26

申请号：US14285544

申请日：2014-05-22

Applicant: Lam Research Corporation

Inventor： Yunsang Kim ,  Kaushik Chattopadhyay ,  Gregory Sexton ,  Youn Gi Hong

IPC: H01L21/02 ,  C23C16/458 ,  H01L21/67 ,  H01L27/115 ,  C23C16/52

CPC classification number: H01L21/02271 ,  C23C16/02 ,  C23C16/04 ,  C23C16/44 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/45519 ,  C23C16/458 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32403 ,  H01J37/32715 ,  H01L21/02301 ,  H01L21/02315 ,  H01L21/02345 ,  H01L21/67069 ,  H01L21/67207 ,  H01L27/115

Abstract: The embodiments disclosed herein pertain to methods and apparatus for depositing stress compensating layers and sacrificial layers on either the front side or back side of a substrate. In various implementations, back side deposition occurs while the wafer is in a normal front side up orientation. The front/back side deposition may be performed to reduce stress introduced through deposition on the front side of the wafer. The back side deposition may also be performed to minimize back side particle-related problems that occur during post-deposition processing such as photolithography.

Abstract translation: 这里公开的实施例涉及用于在衬底的前侧或后侧上沉积应力补偿层和牺牲层的方法和装置。 在各种实施方案中，当晶片处于正常的正面朝上取向时，发生背面沉积。 可以执行前/后侧沉积以减少通过沉积在晶片的前侧引入的应力。 还可以执行背面沉积以最小化在诸如光刻的后期沉积处理期间发生的背面颗粒相关问题。

公开(公告)号：US20150099365A1

公开(公告)日：2015-04-09

申请号：US14046206

申请日：2013-10-04

Applicant: Lam Research Corporation

Inventor： Jack Chen ,  Adam Liron ,  Gregory Sexton

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/02087 ,  H01J37/32091 ,  H01J37/32385 ,  H01J37/32642 ,  H01L21/67069 ,  Y10T29/49817

Abstract: A bevel etcher for cleaning a bevel edge of a semiconductor substrate with plasma includes a lower electrode assembly having a lower support having a cylindrical top portion. An upper dielectric component is disposed above the lower electrode assembly having a cylindrical bottom portion opposing the top portion of the lower support. A tunable upper plasma exclusion zone (PEZ) ring surrounds the bottom portion of the dielectric component, wherein a lower surface of the tunable upper PEZ ring includes an upwardly tapered outer portion extending outwardly from the bottom portion of the upper dielectric component, wherein a vertical height of an adjustable gap between the lower surface of the upper PEZ ring and an upper surface of a substrate supported on the lower support can be increased or decreased such that the extent of the bevel edge of the substrate to be cleaned by the plasma can respectively be adjusted radially inward or radially outward. At least one radio frequency (RF) power source is adapted to energize process gas into the plasma during a bevel edge cleaning process.

Abstract translation: 用于用等离子体清洁半导体衬底的斜边缘的斜面蚀刻器包括具有具有圆柱形顶部的下支撑件的下电极组件。 上部电介质部件设置在下部电极组件的上方，该电极组件具有与下部支撑件的顶部相对的圆柱形底部。 可调谐上等离子体隔离区（PEZ）环围绕电介质部件的底部，其中可调谐上PEZ环的下表面包括从上介电部件的底部向外延伸的向上锥形的外部，其中垂直 可以增加或减少上PEZ环的下表面和支撑在下支撑件上的基底的上表面之间的可调节间隙的高度，使得待等离子体待清洁的基底的斜边的范围可分别 径向向内或径向向外调节。 至少一个射频（RF）电源适于在斜边清洁过程期间将处理气体激发到等离子体中。

公开(公告)号：US09881788B2

公开(公告)日：2018-01-30

申请号：US14285544

申请日：2014-05-22

Applicant: Lam Research Corporation

Inventor： Yunsang Kim ,  Kaushik Chattopadhyay ,  Gregory Sexton ,  Youn Gi Hong

IPC: H01L21/00 ,  H01J37/00 ,  H01L21/02 ,  H01L27/115 ,  C23C16/52 ,  H01L21/67 ,  C23C16/458 ,  C23C16/02 ,  C23C16/44 ,  H01J37/32

CPC classification number: H01L21/02271 ,  C23C16/02 ,  C23C16/04 ,  C23C16/44 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/45519 ,  C23C16/458 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32403 ,  H01J37/32715 ,  H01L21/02301 ,  H01L21/02315 ,  H01L21/02345 ,  H01L21/67069 ,  H01L21/67207 ,  H01L27/115

Abstract: The embodiments disclosed herein pertain to methods and apparatus for depositing stress compensating layers and sacrificial layers on either the front side or back side of a substrate. In various implementations, back side deposition occurs while the wafer is in a normal front side up orientation. The front/back side deposition may be performed to reduce stress introduced through deposition on the front side of the wafer. The back side deposition may also be performed to minimize back side particle-related problems that occur during post-deposition processing such as photolithography.