公开(公告)号：US10937634B2

公开(公告)日：2021-03-02

申请号：US14046206

申请日：2013-10-04

Applicant: Lam Research Corporation

Inventor： Jack Chen ,  Adam Liron ,  Gregory Sexton

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67

Abstract: A bevel etcher for cleaning a bevel edge of a semiconductor substrate with plasma includes a lower electrode assembly having a lower support having a cylindrical top portion. An upper dielectric component is disposed above the lower electrode assembly having a cylindrical bottom portion opposing the top portion of the lower support. A tunable upper plasma exclusion zone (PEZ) ring surrounds the bottom portion of the dielectric component, wherein a lower surface of the tunable upper PEZ ring includes an upwardly tapered outer portion extending outwardly from the bottom portion of the upper dielectric component, wherein a vertical height of an adjustable gap between the lower surface of the upper PEZ ring and an upper surface of a substrate supported on the lower support can be increased or decreased such that the extent of the bevel edge of the substrate to be cleaned by the plasma can respectively be adjusted radially inward or radially outward. At least one radio frequency (RF) power source is adapted to energize process gas into the plasma during a bevel edge cleaning process.

公开(公告)号：US11756771B2

公开(公告)日：2023-09-12

申请号：US17162097

申请日：2021-01-29

Applicant: LAM RESEARCH CORPORATION

Inventor： Jack Chen ,  Adam Liron ,  Gregory Sexton

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01J37/32385 ,  H01J37/32091 ,  H01J37/32642 ,  H01L21/02087 ,  H01L21/67069 ,  Y10T29/49817

Abstract: A tunable upper plasma exclusion zone (PEZ) ring adjusts a distance of plasma during processing in a processing chamber and includes: a lower surface that includes: a horizontal portion; and an upwardly tapered outer portion that is conical and that extends outwardly and upwardly from the horizontal portion at an upward taper angle of about 5° to 50° with respect to the horizontal portion, where an outer diameter of the upwardly tapered outer portion is greater than 300 millimeters (mm), and where an inner diameter where the upwardly tapered outer portion begins to extend upwardly is less than 300 mm. A controller is to, during processing of a 300 mm circular substrate, adjust the distance of plasma for treatment of the 300 mm circular substrate at least one of radially inward and radially outward using the tunable upper PEZ ring.

公开(公告)号：US20150099365A1

公开(公告)日：2015-04-09

申请号：US14046206

申请日：2013-10-04

Applicant: Lam Research Corporation

Inventor： Jack Chen ,  Adam Liron ,  Gregory Sexton

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/02087 ,  H01J37/32091 ,  H01J37/32385 ,  H01J37/32642 ,  H01L21/67069 ,  Y10T29/49817

Abstract: A bevel etcher for cleaning a bevel edge of a semiconductor substrate with plasma includes a lower electrode assembly having a lower support having a cylindrical top portion. An upper dielectric component is disposed above the lower electrode assembly having a cylindrical bottom portion opposing the top portion of the lower support. A tunable upper plasma exclusion zone (PEZ) ring surrounds the bottom portion of the dielectric component, wherein a lower surface of the tunable upper PEZ ring includes an upwardly tapered outer portion extending outwardly from the bottom portion of the upper dielectric component, wherein a vertical height of an adjustable gap between the lower surface of the upper PEZ ring and an upper surface of a substrate supported on the lower support can be increased or decreased such that the extent of the bevel edge of the substrate to be cleaned by the plasma can respectively be adjusted radially inward or radially outward. At least one radio frequency (RF) power source is adapted to energize process gas into the plasma during a bevel edge cleaning process.

Abstract translation: 用于用等离子体清洁半导体衬底的斜边缘的斜面蚀刻器包括具有具有圆柱形顶部的下支撑件的下电极组件。 上部电介质部件设置在下部电极组件的上方，该电极组件具有与下部支撑件的顶部相对的圆柱形底部。 可调谐上等离子体隔离区（PEZ）环围绕电介质部件的底部，其中可调谐上PEZ环的下表面包括从上介电部件的底部向外延伸的向上锥形的外部，其中垂直 可以增加或减少上PEZ环的下表面和支撑在下支撑件上的基底的上表面之间的可调节间隙的高度，使得待等离子体待清洁的基底的斜边的范围可分别 径向向内或径向向外调节。 至少一个射频（RF）电源适于在斜边清洁过程期间将处理气体激发到等离子体中。