公开(公告)号：US20230317445A1

公开(公告)日：2023-10-05

申请号：US18042078

申请日：2021-08-13

Applicant: Lam Research Corporation

Inventor： Xuefeng Hua ,  Jack Chen ,  Ian Scot Latchford ,  Chia-Shin Lin ,  Chanthavisa Keovisai

IPC: H01L21/02 ,  H01L21/321 ,  H01L21/66

CPC classification number: H01L21/02021 ,  H01L21/02274 ,  H01L21/3212 ,  H01L22/12 ,  H01L21/02019 ,  H01L21/02164

Abstract: Semiconductor processing methods and apparatuses are provided. Some methods include providing a first wafer to a processing chamber, the first wafer having a thickness, a beveled edge, a first side, and a plurality of devices formed in a device area on the first side, the device area having an outer perimeter, depositing an annular ring of material on the first wafer, the annular ring of material covering a region of the beveled edge and the outer perimeter of the device area, and having an inner boundary closer to the center point of the first wafer than the outer perimeter, bonding a second substrate to the plurality of devices and to a portion of the annular ring of material, and thinning the thickness of the first wafer.

公开(公告)号：US20170256393A1

公开(公告)日：2017-09-07

申请号：US15598166

申请日：2017-05-17

Applicant: Lam Research Corporation

Inventor： Keechan Kim ,  Jack Chen ,  Yunsang Kim ,  Kenneth George Delfin

IPC: H01L21/28 ,  H01L21/67 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/02057 ,  H01J37/32091 ,  H01J37/32385 ,  H01J37/32403 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/67028

Abstract: A lower electrode plate receives radiofrequency power. A first upper plate is positioned parallel to and spaced apart from the lower electrode plate. A grounded second upper plate is positioned next to the first upper plate. A dielectric support provides support of a workpiece within a region between the lower electrode plate and the first upper plate. A purge gas is supplied at a central location of the first upper plate. A process gas is supplied to a periphery of the first upper plate. The dielectric support positions the workpiece proximate and parallel to the first upper plate, such that the purge gas flows over a top surface of the workpiece so as to prevent the process gas from flowing over the top surface of the workpiece, and so as to cause the process gas to flow around a peripheral edge of the workpiece and below the workpiece.

公开(公告)号：US11756771B2

公开(公告)日：2023-09-12

申请号：US17162097

申请日：2021-01-29

Applicant: LAM RESEARCH CORPORATION

Inventor： Jack Chen ,  Adam Liron ,  Gregory Sexton

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01J37/32385 ,  H01J37/32091 ,  H01J37/32642 ,  H01L21/02087 ,  H01L21/67069 ,  Y10T29/49817

Abstract: A tunable upper plasma exclusion zone (PEZ) ring adjusts a distance of plasma during processing in a processing chamber and includes: a lower surface that includes: a horizontal portion; and an upwardly tapered outer portion that is conical and that extends outwardly and upwardly from the horizontal portion at an upward taper angle of about 5° to 50° with respect to the horizontal portion, where an outer diameter of the upwardly tapered outer portion is greater than 300 millimeters (mm), and where an inner diameter where the upwardly tapered outer portion begins to extend upwardly is less than 300 mm. A controller is to, during processing of a 300 mm circular substrate, adjust the distance of plasma for treatment of the 300 mm circular substrate at least one of radially inward and radially outward using the tunable upper PEZ ring.

公开(公告)号：US20150099365A1

公开(公告)日：2015-04-09

申请号：US14046206

申请日：2013-10-04

Applicant: Lam Research Corporation

Inventor： Jack Chen ,  Adam Liron ,  Gregory Sexton

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/02087 ,  H01J37/32091 ,  H01J37/32385 ,  H01J37/32642 ,  H01L21/67069 ,  Y10T29/49817

Abstract: A bevel etcher for cleaning a bevel edge of a semiconductor substrate with plasma includes a lower electrode assembly having a lower support having a cylindrical top portion. An upper dielectric component is disposed above the lower electrode assembly having a cylindrical bottom portion opposing the top portion of the lower support. A tunable upper plasma exclusion zone (PEZ) ring surrounds the bottom portion of the dielectric component, wherein a lower surface of the tunable upper PEZ ring includes an upwardly tapered outer portion extending outwardly from the bottom portion of the upper dielectric component, wherein a vertical height of an adjustable gap between the lower surface of the upper PEZ ring and an upper surface of a substrate supported on the lower support can be increased or decreased such that the extent of the bevel edge of the substrate to be cleaned by the plasma can respectively be adjusted radially inward or radially outward. At least one radio frequency (RF) power source is adapted to energize process gas into the plasma during a bevel edge cleaning process.

Abstract translation: 用于用等离子体清洁半导体衬底的斜边缘的斜面蚀刻器包括具有具有圆柱形顶部的下支撑件的下电极组件。 上部电介质部件设置在下部电极组件的上方，该电极组件具有与下部支撑件的顶部相对的圆柱形底部。 可调谐上等离子体隔离区（PEZ）环围绕电介质部件的底部，其中可调谐上PEZ环的下表面包括从上介电部件的底部向外延伸的向上锥形的外部，其中垂直 可以增加或减少上PEZ环的下表面和支撑在下支撑件上的基底的上表面之间的可调节间隙的高度，使得待等离子体待清洁的基底的斜边的范围可分别 径向向内或径向向外调节。 至少一个射频（RF）电源适于在斜边清洁过程期间将处理气体激发到等离子体中。

公开(公告)号：US20230215692A1

公开(公告)日：2023-07-06

申请号：US18010760

申请日：2021-08-12

Applicant: Lam Research Corporation

Inventor： Xuefeng Hua ,  Wei Yi Luo ,  Jack Chen

IPC: H01J37/32

CPC classification number: H01J37/32146 ,  H01J37/32568 ,  H01J37/32091 ,  H01J2237/038 ,  H01J2237/24564 ,  H01J2237/334

Abstract: Methods and systems for processing a bevel edge of a wafer in a bevel plasma chamber. The method includes receiving a pulsed mode setting for a RF generator of the bevel plasma chamber. The method includes identifying a duty cycle for the pulsed mode, the duty cycle defining an ON time and an OFF time during each cycle of power delivered by the generator. The method includes calculating or accessing a compensation factor to an input RF power setting of the generator. The compensation factor is configured to add an incremental amount of power to the input power setting to account for a loss in power attributed to the duty cycle to be run in the pulsed mode. The method is configured to run the generator in the pulse mode with the duty cycle and the pulsing frequency. The generator is configured to generate the input power in pulsing mode that includes incremental amount of power to achieve an effective power in the bevel plasma chamber to achieve a target bevel processing throughput, while reducing charge build-up that causes arcing damage.

公开(公告)号：US10937634B2

公开(公告)日：2021-03-02

申请号：US14046206

申请日：2013-10-04

Applicant: Lam Research Corporation

Inventor： Jack Chen ,  Adam Liron ,  Gregory Sexton

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67

Abstract: A bevel etcher for cleaning a bevel edge of a semiconductor substrate with plasma includes a lower electrode assembly having a lower support having a cylindrical top portion. An upper dielectric component is disposed above the lower electrode assembly having a cylindrical bottom portion opposing the top portion of the lower support. A tunable upper plasma exclusion zone (PEZ) ring surrounds the bottom portion of the dielectric component, wherein a lower surface of the tunable upper PEZ ring includes an upwardly tapered outer portion extending outwardly from the bottom portion of the upper dielectric component, wherein a vertical height of an adjustable gap between the lower surface of the upper PEZ ring and an upper surface of a substrate supported on the lower support can be increased or decreased such that the extent of the bevel edge of the substrate to be cleaned by the plasma can respectively be adjusted radially inward or radially outward. At least one radio frequency (RF) power source is adapted to energize process gas into the plasma during a bevel edge cleaning process.

公开(公告)号：US20150020848A1

公开(公告)日：2015-01-22

申请号：US14032165

申请日：2013-09-19

Applicant: Lam Research Corporation

Inventor： Keechan Kim ,  Jack Chen ,  Yunsang Kim ,  Kenneth George Delfin

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02057 ,  H01J37/32091 ,  H01J37/32385 ,  H01J37/32403 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/67028

Abstract: A lower electrode plate receives radiofrequency power. A first upper plate is positioned parallel to and spaced apart from the lower electrode plate. A grounded second upper plate is positioned next to the first upper plate. A dielectric support provides support of a workpiece within a region between the lower electrode plate and the first upper plate. A purge gas is supplied at a central location of the first upper plate. A process gas is supplied to a periphery of the first upper plate. The dielectric support positions the workpiece proximate and parallel to the first upper plate, such that the purge gas flows over a top surface of the workpiece so as to prevent the process gas from flowing over the top surface of the workpiece, and so as to cause the process gas to flow around a peripheral edge of the workpiece and below the workpiece.

Abstract translation: 下电极板接收射频电力。 第一上板与下电极板平行且间隔开定位。 接地的第二上板位于第一上板的旁边。 电介质支撑件在下电极板和第一上板之间的区域内提供对工件的支撑。 净化气体在第一上板的中心位置供应。 处理气体被供给到第一上板的周边。 电介质支撑件使工件靠近并平行于第一上板，使得吹扫气体在工件的顶表面上流动，以防止工艺气体流过工件的顶表面，从而导致 工艺气体围绕工件的周边边缘流动并在工件下面。