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公开(公告)号：US20240295025A1
公开(公告)日：2024-09-05
申请号：US17754853
申请日：2020-10-13
IPC分类号： C23C16/455 , C23C16/458
CPC分类号： C23C16/45565 , C23C16/4583
摘要： A dual-plenum fractal (DPF) showerhead for distributing different semiconductor processing gases across a semiconductor wafer during processing operations is provided. The DPF showerhead may have a plurality of layers, each featuring a pattern of gas distribution features, with the gas distribution features on each layer generally being similar in shape to the gas distribution features on the layer immediately upstream therefrom but smaller in size. Such a “fractal”-like structure to the gas flow passages provides very uniform processing gas delivery across the surface of a semiconductor wafer during processing operations, thereby enhancing wafer uniformity.
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公开(公告)号：US20130280917A1
公开(公告)日：2013-10-24
申请号：US13918616
申请日：2013-06-14
发明人： William Thie , John M. Boyd , Fritz C. Redeker , Yezdi Dordi , John Parks , Tiruchirapalli Arunagiri , Aleksander Owczarz , Todd Balisky , Clint Thomas , Jacob Wylie , Alan M. Schoepp
IPC分类号： H01L21/02
CPC分类号： H01L21/02104 , C23C18/1619 , H01L21/67005 , H01L21/6715
摘要： A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.
摘要翻译： 半导体晶片化学镀设备包括压板和流体碗。 压板具有限定为支撑晶片的顶表面和从顶表面的周边向下延伸到压板的下表面的外表面。 流体碗具有由内表面限定的内部容积，以便在内部容积内容纳压板和要支撑在其上的晶片。 密封件设置在流体碗的内表面周围，以便当接合在流体碗的内表面和压板的外表面之间时形成液密屏障。 多个流体分配喷嘴被定位成在密封件上方的流体碗内分配电镀溶液，以便在压板上升起并流动，从而当存在于压板上时流过晶片。
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公开(公告)号：US09982341B2
公开(公告)日：2018-05-29
申请号：US14610990
申请日：2015-01-30
发明人： Alan M. Schoepp , Colin F. Smith , Edward Sung
IPC分类号： F22B1/28 , C23C16/448
CPC分类号： C23C16/4481 , F22B1/282
摘要： An improved vaporizer for vaporizing a process fluid is provided. The vaporizer may be assembled from stacked plates and may include one or more plenums with a relatively large wall-area-to-cross-sectional-flow-area ratio. The vaporizer may be equipped with one or more heating elements configured to heat the plenums above the vaporization temperature of the precursor. At least some of the plenums may be heated above the vaporization temperature, but below the Leidenfrost temperature, of the precursor. Multiple stacked plate arrangements may be ganged together in series to achieve complete vaporization, if necessary. The vaporizers may be easily disassembleable for cleaning and maintenance.
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公开(公告)号：US08898928B2
公开(公告)日：2014-12-02
申请号：US13650044
申请日：2012-10-11
IPC分类号： F26B13/30
CPC分类号： H01L21/67034 , H01L21/02057 , H01L21/6831
摘要： An apparatus for delamination drying a substrate is provided. A chamber for receiving a substrate is provided. A chuck supports and clamps the substrate within the chamber. A temperature controller controls the temperature of the substrate and is able to cool the substrate. A vacuum pump is in fluid connection with the chamber. A tilting mechanism is able to tilt the chuck at least 90 degrees.
摘要翻译： 提供了一种用于分层干燥基板的设备。 提供了用于接收基板的室。 卡盘支撑并夹紧腔室内的基底。 温度控制器控制衬底的温度并能够冷却衬底。 真空泵与腔室流体连接。 倾斜机构能够将卡盘倾斜至少90度。
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公开(公告)号：US20140038418A1
公开(公告)日：2014-02-06
申请号：US14047560
申请日：2013-10-07
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01L21/02087 , H01L21/67069 , H01L21/6838
摘要： A bevel etcher incorporating a vacuum chuck used for cleaning the bevel edge and for reducing the bending curvature of a semiconductor substrate. The bevel etcher includes a vacuum chuck and a plasma generation unit which energizes process gas into a plasma state. The vacuum chuck includes a chuck body and a support ring. The top surface of the chuck body and inner periphery of the support ring form a vacuum region enclosed by the bottom surface of a substrate mounted on the support ring. A vacuum pump evacuates the vacuum region during operation. The vacuum chuck is operative to hold the substrate in place by the pressure difference between the top and bottom surfaces of the substrate. The pressure difference also generates a bending force to reduce the bending curvature of the substrate.
摘要翻译： 包括用于清洁斜边缘并用于减小半导体衬底的弯曲曲率的真空吸盘的斜面蚀刻机。 斜面蚀刻机包括真空吸盘和等离子体产生单元，其将处理气体激发成等离子体状态。 真空吸盘包括卡盘主体和支撑环。 卡盘体的上表面和支撑环的内周形成由安装在支撑环上的基板的底面包围的真空区域。 真空泵在运行期间抽空真空区域。 真空吸盘可操作以通过衬底的顶表面和底表面之间的压力差将衬底保持在适当的位置。 压差也产生弯曲力以减小基板的弯曲曲率。
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公开(公告)号：US11984330B2
公开(公告)日：2024-05-14
申请号：US17053110
申请日：2019-05-02
发明人： Dong Woo Paeng , Yunsang S. Kim , He Zhang , Keith Wells , Alan M. Schoepp
CPC分类号： H01L21/67115 , C23C16/45544 , G02B27/0927 , G02B27/0944 , G02B27/0955 , G02B27/30 , G02F1/11 , H01J37/321 , H01J37/32449 , H01J37/32715 , H01L21/67069 , H01J2237/332 , H01J2237/334
摘要： A substrate processing system includes a processing chamber, a substrate support, a laser, and a collimating assembly. The substrate support is disposed in the processing chamber and is configured to support a substrate. The laser is configured to generate a laser beam. The collimating assembly includes lenses or mirrors arranged to direct the laser beam at the substrate to heat an exposed material of the substrate. The lenses or mirrors are configured to direct the laser beam in a direction within a predetermined range of being perpendicular to a surface of the substrate.
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公开(公告)号：US20160222508A1
公开(公告)日：2016-08-04
申请号：US14610990
申请日：2015-01-30
发明人： Alan M. Schoepp , Colin F. Smith , Edward Sung
IPC分类号： C23C16/448 , F22B1/28 , H05B1/00
CPC分类号： C23C16/4481 , F22B1/282
摘要： An improved vaporizer for vaporizing a process fluid is provided. The vaporizer may be assembled from stacked plates and may include one or more plenums with a relatively large wall-area-to-cross-sectional-flow-area ratio. The vaporizer may be equipped with one or more heating elements configured to heat the plenums above the vaporization temperature of the precursor. At least some of the plenums may be heated above the vaporization temperature, but below the Leidenfrost temperature, of the precursor. Multiple stacked plate arrangements may be ganged together in series to achieve complete vaporization, if necessary. The vaporizers may be easily disassembleable for cleaning and maintenance.
摘要翻译： 提供一种用于蒸发工艺流体的改进的蒸发器。 蒸发器可以由堆叠的板组装，并且可以包括一个或多个具有相对较大的壁面积与横截面积面积比的增压室。 蒸发器可以配备有一个或多个加热元件，该加热元件被配置为将高压室加热到前体的汽化温度以上。 至少一些增压室可以被加热到前体的蒸发温度之上但低于雷顿呋斯温度。 如果需要，多个堆叠板装置可以串联在一起以实现完全蒸发。 蒸发器可以容易地拆卸以进行清洁和维护。
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公开(公告)号：US09287110B2
公开(公告)日：2016-03-15
申请号：US13918616
申请日：2013-06-14
发明人： William Thie , John M. Boyd , Fritz C. Redeker , Yezdi Dordi , John Parks , Tiruchirapalli Arunagiri , Aleksander Owczarz , Todd Balisky , Clint Thomas , Jacob Wylie , Alan M. Schoepp
CPC分类号： H01L21/02104 , C23C18/1619 , H01L21/67005 , H01L21/6715
摘要： A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.
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公开(公告)号：US08721908B2
公开(公告)日：2014-05-13
申请号：US14047560
申请日：2013-10-07
CPC分类号： H01L21/3065 , H01L21/02087 , H01L21/67069 , H01L21/6838
摘要： A bevel etcher incorporating a vacuum chuck used for cleaning the bevel edge and for reducing the bending curvature of a semiconductor substrate. The bevel etcher includes a vacuum chuck and a plasma generation unit which energizes process gas into a plasma state. The vacuum chuck includes a chuck body and a support ring. The top surface of the chuck body and inner periphery of the support ring form a vacuum region enclosed by the bottom surface of a substrate mounted on the support ring. A vacuum pump evacuates the vacuum region during operation. The vacuum chuck is operative to hold the substrate in place by the pressure difference between the top and bottom surfaces of the substrate. The pressure difference also generates a bending force to reduce the bending curvature of the substrate.
摘要翻译： 包括用于清洁斜边缘并用于减小半导体衬底的弯曲曲率的真空吸盘的斜面蚀刻机。 斜面蚀刻机包括真空吸盘和等离子体产生单元，其将处理气体激发成等离子体状态。 真空吸盘包括卡盘主体和支撑环。 卡盘体的上表面和支撑环的内周形成由安装在支撑环上的基板的底面包围的真空区域。 真空泵在运行期间抽空真空区域。 真空吸盘可操作以通过衬底的顶表面和底表面之间的压力差将衬底保持在适当的位置。 压差也产生弯曲力以减小基板的弯曲曲率。
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公开(公告)号：US20230260759A1
公开(公告)日：2023-08-17
申请号：US18003139
申请日：2021-10-22
发明人： Eric A. Hudson , Andrew Clark Serino , Thad Nicholson , Ramesh Chandrasekharan , Alan M. Schoepp
IPC分类号： H01J37/32 , C23C16/50 , C23C16/02 , C23C16/56 , C23C16/455
CPC分类号： H01J37/32449 , H01J37/32816 , H01J37/32458 , C23C16/50 , C23C16/0245 , C23C16/56 , C23C16/45565 , H01J2237/334 , H01J2237/2002 , H01J37/32357
摘要： Various embodiments herein relate to methods and systems for integrating a vapor deposition process and an etch process in a single reactor. The vapor deposition process involves delivery of at least one deposition vapor in the absence of plasma. The etch process is a plasma etch process. Various features may be combined as desired to promote high quality deposition and etching results.
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