公开(公告)号：US20230260759A1

公开(公告)日：2023-08-17

申请号：US18003139

申请日：2021-10-22

申请人： Lam Research Corporation

发明人： Eric A. Hudson ,  Andrew Clark Serino ,  Thad Nicholson ,  Ramesh Chandrasekharan ,  Alan M. Schoepp

IPC分类号： H01J37/32 ,  C23C16/50 ,  C23C16/02 ,  C23C16/56 ,  C23C16/455

CPC分类号： H01J37/32449 ,  H01J37/32816 ,  H01J37/32458 ,  C23C16/50 ,  C23C16/0245 ,  C23C16/56 ,  C23C16/45565 ,  H01J2237/334 ,  H01J2237/2002 ,  H01J37/32357

摘要： Various embodiments herein relate to methods and systems for integrating a vapor deposition process and an etch process in a single reactor. The vapor deposition process involves delivery of at least one deposition vapor in the absence of plasma. The etch process is a plasma etch process. Various features may be combined as desired to promote high quality deposition and etching results.

公开(公告)号：US20220308462A1

公开(公告)日：2022-09-29

申请号：US17596928

申请日：2020-06-22

申请人： Lam Research Corporation

发明人： Butch Berney ,  Alan M. Schoepp ,  Timothy William Weidman ,  Kevin Li Gu ,  Chenghao Wu ,  Katie Lynn Nardi ,  Boris Volosskiy ,  Clint Edward Thomas ,  Thad Nicholson

IPC分类号： G03F7/20

摘要： Systems and techniques for dry deposition of extreme ultra-violet-sensitive (EUV-sensitive) photoresist layers are discussed. In some such systems, a processing chamber may be provided that features a multi-plenum showerhead that is configured to receive a vaporized organometallic precursor in one plenum and a vaporized counter-reactant thereof in another plenum. The two vaporized reactants may be delivered to a reaction space within the processing chamber and over a wafer support that supports the substrate.