公开(公告)号：US08215153B2

公开(公告)日：2012-07-10

申请号：US12552360

申请日：2009-09-02

申请人： Yoshiaki Matsubara ,  Takayoshi Atsumi ,  Kouji Matsuo ,  Kazuhiro Kouzaki ,  Masahiro Asai

发明人： Yoshiaki Matsubara ,  Takayoshi Atsumi ,  Kouji Matsuo ,  Kazuhiro Kouzaki ,  Masahiro Asai

IPC分类号： G01N19/10 ,  G01N7/00

CPC分类号： G01N27/4077

摘要： A gas sensor including a detection element having a detection portion; a metal shell that surrounds the detection element so as to expose the detection portion to a measured atmosphere; an outer tube that is fixed to the metal shell so as to cover a rear end side of the detection element; and a seal member that is contained inside the outer tube, the seal member having a lead wire insertion hole and a through hole that penetrates in the axial direction; a tubular holding member made of a resin having a lower coefficient of thermal expansion than the seal member, the tubular holding member being held inside the through hole, the tubular holding member having a ventilation hole; and a filter that covers the ventilation hole, the filter being joined to the holding member, the filter blocking water from passing therethrough, and the filter having air permeability.

摘要翻译： 一种气体传感器，包括具有检测部分的检测元件; 围绕检测元件的金属壳，以便将检测部分暴露于测量的气氛; 固定在所述金属壳上以覆盖所述检测元件的后端侧的外管; 以及密封构件，其被容纳在所述外管的内部，所述密封构件具有引线插入孔和贯穿所述轴向的通孔; 由与所述密封构件的热膨胀系数相比较低的树脂制的管状保持构件，所述管状保持构件保持在所述通孔的内部，所述管状保持构件具有通气孔; 以及覆盖通气孔的过滤器，过滤器与保持构件接合，过滤器阻止水通过，过滤器具有透气性。

公开(公告)号：US07989903B2

公开(公告)日：2011-08-02

申请号：US12757658

申请日：2010-04-09

申请人： Takayuki Ito ,  Kyoichi Suguro ,  Kouji Matsuo

发明人： Takayuki Ito ,  Kyoichi Suguro ,  Kouji Matsuo

IPC分类号： H01L21/02

CPC分类号： H01L21/823857 ,  H01L21/823814 ,  H01L21/823842

摘要： A semiconductor device includes a semiconductor region, a source region, a drain region, a source extension region a drain extension region, a first gate insulation film, a second gate insulation film, and a gate electrode. The source region, drain region, source extension region and drain extension region are formed in a surface portion of the semiconductor region. The first gate insulation film is formed on the semiconductor region between the source extension region and the drain extension region. The first gate insulation film is formed of a silicon oxide film or a silicon oxynitride film having a nitrogen concentration of 15 atomic % or less. The second gate insulation film is formed on the first gate insulation film and contains nitrogen at a concentration of between 20 atomic % and 57 atomic %. The gate electrode is formed on the second gate insulation film.

摘要翻译： 半导体器件包括半导体区域，源极区域，漏极区域，源极延伸区域，漏极延伸区域，第一栅极绝缘膜，第二栅极绝缘膜和栅极电极。 源极区域，漏极区域，源极延伸区域和漏极延伸区域形成在半导体区域的表面部分中。 第一栅极绝缘膜形成在源极延伸区域和漏极延伸区域之间的半导体区域上。 第一栅极绝缘膜由氮浓度为15原子％以下的氧化硅膜或氮氧化硅膜形成。 第二栅极绝缘膜形成在第一栅极绝缘膜上，并且含有浓度为20原子％至57原子％之间的氮。 栅电极形成在第二栅绝缘膜上。

公开(公告)号：US20090309133A1

公开(公告)日：2009-12-17

申请号：US12483728

申请日：2009-06-12

申请人： Takayuki Ito ,  Yusuke Oshiki ,  Kouji Matsuo ,  Kenichi Yoshino ,  Takaharu Itani ,  Takuo Ohashi ,  Toshihiko Iinuma ,  Kiyotaka Miyano ,  Kunihiro Miyazaki

发明人： Takayuki Ito ,  Yusuke Oshiki ,  Kouji Matsuo ,  Kenichi Yoshino ,  Takaharu Itani ,  Takuo Ohashi ,  Toshihiko Iinuma ,  Kiyotaka Miyano ,  Kunihiro Miyazaki

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/823807 ,  H01L21/2686 ,  H01L21/823814 ,  H01L21/823878 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848

摘要： A manufacturing method for semiconductor device includes: forming an opening, in a surface of a semiconductor substrate being composed of first atom, the opening having an opening ratio y to an area of the surface of the semiconductor substrate ranging from 5 to 30%; forming an epitaxial layer in the opening, the epitaxial layer being made of a mixed crystal containing a second atom in a concentration ranging from 15 to 25%, and the second atom having a lattice constant different from a lattice constant of the first atom; implanting impurity ion into the epitaxial layer; and performing activation annealing at a predetermined temperature T, the predetermined temperature T being equal to or higher than 1150° C. and satisfies a relationship of y≦1E-5exp(21541/T).

摘要翻译： 一种半导体装置的制造方法，其特征在于，在半导体基板的由第一原子构成的表面上形成有与半导体基板的表面的面积为5〜30％的开口率y的开口的开口部; 在所述开口中形成外延层，所述外延层由含有15〜25％的浓度的第二原子的混合晶体构成，所述第二原子的晶格常数不同于所述第一原子的晶格常数; 将杂质离子注入到外延层中; 并在预定温度T下进行活化退火，预定温度T等于或高于1150℃，并且满足y <= 1E-5exp（21541 / T）的关系。

公开(公告)号：US07340942B2

公开(公告)日：2008-03-11

申请号：US11384257

申请日：2006-03-21

申请人： Kouji Matsuo ,  Yuichi Yamada

发明人： Kouji Matsuo ,  Yuichi Yamada

IPC分类号： G01N7/00

CPC分类号： G01N27/407 ,  G01N27/4062 ,  G01N27/4077

摘要： A sensor having a terminal connection structure in which an elongated sensor element (21) is inserted, from its rear end through relative movement, into a metallic-terminal-member retainer. Metallic terminal members (51) are elastically deformed and pressed against corresponding electrode terminals (25) formed on side surfaces (26) of the sensor element. A chamfer (28) is formed on a rear edge of sensor element (21). Rear ends (25b) of the electrode terminals (25) are biased from the chamfer (28) toward a front end of the element (21). A flat surface (26b) is present between the rear ends (25b) of the electrode terminals (25) and a front end (28a) of the chamfer (28). During insertion of the element (21), a large force generated when the metallic terminal members (51) pass over the chamfer (28) is not directly applied to the rear ends (25b) of the electrode terminals (25), thereby preventing damage to the electrode terminals (25).

摘要翻译： 具有端子连接结构的传感器，其中细长的传感器元件（21）从其后端通过相对运动插入到金属端子构件保持器中。 金属端子构件（51）弹性变形并压在形成在传感器元件的侧表面（26）上的相应电极端子（25）上。 在传感器元件（21）的后边缘上形成倒角（28）。 电极端子（25）的后端（25b）从倒角（28）偏向元件（21）的前端。 在电极端子（25）的后端（25b）和倒角（28）的前端（28a）之间存在平坦表面（26b）。 在元件（21）的插入过程中，当金属端子构件（51）通过倒角（28）时产生的大的力不会直接施加到电极端子（25）的后端（25b），从而防止 对电极端子（25）的损坏。

公开(公告)号：US20070200170A1

公开(公告)日：2007-08-30

申请号：US11705792

申请日：2007-02-14

申请人： Hiroyuki Yamasaki ,  Kouji Matsuo ,  Seiichi Iwasa

发明人： Hiroyuki Yamasaki ,  Kouji Matsuo ,  Seiichi Iwasa

IPC分类号： H01L29/76

CPC分类号： H01L29/7843 ,  H01L21/2254 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

摘要： A semiconductor device includes an isolation region, a semiconductor element region defined by the isolation region, and having a channel forming portion and a recessed portion, the recessed portion being formed between the isolation region and the channel forming portion, and an epitaxial semiconductor portion formed in the recessed portion, wherein the semiconductor element region has a wall portion between the isolation region and the epitaxial semiconductor portion.

摘要翻译： 半导体器件包括隔离区，由隔离区限定的半导体元件区，并具有沟道形成部和凹部，凹部形成在隔离区与沟道形成部之间，形成外延半导体部 在所述凹部中，所述半导体元件区域在所述隔离区域和所述外延半导体部分之间具有壁部。

公开(公告)号：US20070085131A1

公开(公告)日：2007-04-19

申请号：US11543146

申请日：2006-10-05

申请人： Kouji Matsuo ,  Ichiro Mizushima ,  Toshihiko Iinuma

发明人： Kouji Matsuo ,  Ichiro Mizushima ,  Toshihiko Iinuma

IPC分类号： H01L29/788

CPC分类号： H01L29/0657 ,  H01L29/665 ,  H01L29/66772 ,  H01L29/7843 ,  H01L29/7849 ,  H01L29/78654 ,  H01L29/78696

摘要： A semiconductor device includes a semiconductor substrate which has a cavity and has a source region, a drain region, and a channel region above the cavity, a gate electrode which is formed on the channel region with a gate insulating film interposed between the gate electrode and the channel region, and a stress generating film which has a first portion formed on the upper surface of the cavity and which gives a strain to the channel region.

摘要翻译： 半导体器件包括具有空腔并具有源极区域，漏极区域和空腔上方的沟道区域的半导体衬底，栅电极，其形成在沟道区上，栅极绝缘膜插入在栅极电极和 沟道区域和应力产生膜，其具有形成在空腔的上表面上并且对沟道区域产生应变的第一部分。

公开(公告)号：US07179702B2

公开(公告)日：2007-02-20

申请号：US11232861

申请日：2005-09-23

申请人： Kouji Matsuo

发明人： Kouji Matsuo

IPC分类号： H01L21/8238 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/20 ,  H01L21/4763 ,  H01L21/461 ,  H01L21/00 ,  H01L29/76

CPC分类号： H01L29/66545 ,  H01L21/28097 ,  H01L21/823814 ,  H01L21/823842 ,  H01L21/823864

摘要： A semiconductor device comprises a semiconductor substrate, an N-channel MISFET and a P-channel MISFET provided on the semiconductor substrate, each of the N- and P-channel MISFETs being isolated by an isolation region and having a gate insulating film, a first gate electrode film provided on the gate insulating film of the N-channel MISFET and composed of a first metal silicide, a second gate electrode film provided on the gate insulating film of the P-channel MISFET and composed of a second metal silicide made of a second metal material different from a first metal material composing the first metal silicide, and a work function of the first gate electrode film being lower than that of the second gate electrode film.

摘要翻译： 半导体器件包括设置在半导体衬底上的半导体衬底，N沟道MISFET和P沟道MISFET，每个N沟道MIS晶体管和P沟道MISFET由隔离区域隔离并具有栅极绝缘膜，第一 栅极电极膜，设置在N沟道MISFET的栅极绝缘膜上，由第一金属硅化物构成，第二栅极电极膜设置在P沟道MISFET的栅极绝缘膜上，并由第二金属硅化物 第二金属材料与构成第一金属硅化物的第一金属材料不同，第一栅电极膜的功函数低于第二栅电极膜的功函数。

公开(公告)号：US07172955B2

公开(公告)日：2007-02-06

申请号：US11287405

申请日：2005-11-28

申请人： Kouji Matsuo ,  Kazuaki Nakajima

发明人： Kouji Matsuo ,  Kazuaki Nakajima

IPC分类号： H01L21/28 ,  H01L21/44

CPC分类号： H01L29/66545 ,  H01L21/28097 ,  H01L21/82345 ,  H01L29/4975 ,  H01L29/6656 ,  H01L29/6659

摘要： A semiconductor device comprises an n-type MIS transistor comprising a first gate insulating film and a first gate electrode including an MSix film formed on the first gate insulating film, where M represents a metal element selected from tungsten and molybdenum and x is greater than 1, i.e., x>1; and a p-type MIS transistor comprising a second gate insulating film and a second gate electrode including an MSiy film formed on the second gate insulating film, where y is not less than 0 and less than 1, i.e., 0≦y

摘要翻译： 半导体器件包括n型MIS晶体管，其包括第一栅极绝缘膜和第一栅电极，所述第一栅极包括形成在第一栅极绝缘膜上的MSi膜，其中M表示选自钨的金属元素 钼和x大于1，即x> 1; 以及p型MIS晶体管，其包括第二栅极绝缘膜和第二栅电极，所述第二栅电极包括形成在所述第二栅极绝缘膜上的MSi膜，其中y不小于0且小于1， 即0 <= y <1。

公开(公告)号：US20060220159A1

公开(公告)日：2006-10-05

申请号：US11384257

申请日：2006-03-21

申请人： Kouji Matsuo ,  Yuichi Yamada

发明人： Kouji Matsuo ,  Yuichi Yamada

IPC分类号： H01L29/82

CPC分类号： G01N27/407 ,  G01N27/4062 ,  G01N27/4077

摘要： A sensor having a terminal connection structure in which an elongated sensor element (21) is inserted, from its rear end through relative movement, into a metallic-terminal-member retainer. Metallic terminal members (51) are elastically deformed and pressed against corresponding electrode terminals (25) formed on side surfaces (26) of the sensor element. A chamfer (28) is formed on a rear edge of sensor element (21). Rear ends (25b) of the electrode terminals (25) are biased from the chamfer (28) toward a front end of the element (21). A flat surface (26b) is present between the rear ends (25b) of the electrode terminals (25) and a front end (28a) of the chamfer (28). During insertion of the element (21), a large force generated when the metallic terminal members (51) pass over the chamfer (28) is not directly applied to the rear ends (25b) of the electrode terminals (25), thereby preventing damage to the electrode terminals (25).

摘要翻译： 具有端子连接结构的传感器，其中细长的传感器元件（21）从其后端通过相对运动插入到金属端子构件保持器中。 金属端子构件（51）弹性变形并压在形成在传感器元件的侧表面（26）上的相应电极端子（25）上。 在传感器元件（21）的后边缘上形成倒角（28）。 电极端子（25）的后端（25b）从倒角（28）偏向元件（21）的前端。 在电极端子（25）的后端（25b）和倒角（28）的前端（28a）之间存在平坦表面（26b）。 在元件（21）的插入过程中，当金属端子构件（51）通过倒角（28）时产生的大的力不直接施加到电极端子（25）的后端（25b），从而防止 对电极端子（25）的损坏。

公开(公告)号：US06967379B2

公开(公告)日：2005-11-22

申请号：US10658371

申请日：2003-09-10

申请人： Kouji Matsuo

发明人： Kouji Matsuo

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/66545 ,  H01L21/28097 ,  H01L21/823814 ,  H01L21/823842 ,  H01L21/823864

摘要： A semiconductor device comprises a semiconductor substrate, an N-channel MISFET and a P-channel MISFET provided on the semiconductor substrate, each of the N- and P-channel MISFETs being isolated by an isolation region and having a gate insulating film, a first gate electrode film provided on the gate insulating film of the N-channel MISFET and composed of a first metal silicide, a second gate electrode film provided on the gate insulating film of the P-channel MISFET and composed of a second metal silicide made of a second metal material different from a first metal material composing the first metal silicide, and a work function of the first gate electrode film being lower than that of the second gate electrode film.

摘要翻译： 半导体器件包括设置在半导体衬底上的半导体衬底，N沟道MISFET和P沟道MISFET，每个N沟道MIS晶体管和P沟道MISFET由隔离区域隔离并具有栅极绝缘膜，第一 栅极电极膜，设置在N沟道MISFET的栅极绝缘膜上，由第一金属硅化物构成，第二栅极电极膜设置在P沟道MISFET的栅极绝缘膜上，并由第二金属硅化物 第二金属材料与构成第一金属硅化物的第一金属材料不同，第一栅电极膜的功函数低于第二栅电极膜的功函数。