知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

18 records (took 0.043 seconds)

    Deflection array apparatus for multi-electron beam system
    1.
    发明授权
    Deflection array apparatus for multi-electron beam system 有权

    公开(公告)号：US10748739B2

    公开(公告)日：2020-08-18

    申请号：US16230325

    申请日：2018-12-21

    Applicant: KLA-Tencor Corporation

    Inventor： Xinrong Jiang ,  Christopher Sears

    IPC: H01J37/12 ,  H01J37/06

    Abstract: An optical characterization system utilizing a micro-lens array (MLA) is provided. The system may include an electron source and a MLA including a micro-deflection array (MDA). The MDA may include an insulator substrate and a plurality of hexapole electrostatic deflectors disposed on the insulator substrate. The MDA may further include a plurality of voltage connecting lines configured to electrically couple the plurality of hexapole electrostatic deflectors to one or more voltage sources. The MDA may be configured to split a primary electron beam from the electron source into a plurality of primary electron beamlets. The system may be configured to focus the plurality of primary electron beamlets at a wafer plane.

    High resolution electron energy analyzer
    3.
    发明授权
    High resolution electron energy analyzer 有权

    公开(公告)号：US10964522B2

    公开(公告)日：2021-03-30

    申请号：US16298755

    申请日：2019-03-11

    Applicant: KLA-Tencor Corporation

    Inventor： Xinrong Jiang ,  Christopher Sears ,  Nikolai Chubun

    IPC: H01J37/05 ,  H01J49/48

    Abstract: A high-resolution electron energy analyzer is disclosed. In one embodiment, the electron energy analyzer includes an electrostatic lens configured to generate an energy-analyzing field region, decelerate electrons of an electron beam generated by an electron source, and direct the decelerated electrons of the electron beam to the energy-analyzing field region. In another embodiment, the electron energy analyzer includes an electron detector configured to receive one or more electrons passed through the energy-analyzing field region. In another embodiment, the electron detector is further configured to generate one or more signals based on the one or more received electrons.

    Method and system for aberration correction in an electron beam system
    4.
    发明授权
    Method and system for aberration correction in an electron beam system 有权

    公开(公告)号：US10224177B2

    公开(公告)日：2019-03-05

    申请号：US15148331

    申请日：2016-05-06

    Applicant: KLA-Tencor Corporation

    Inventor： Christopher Sears ,  Xinrong Jiang ,  Sameet K. Shriyan

    IPC: H01J37/28 ,  H01J37/147

    Abstract: A scanning electron microscopy system is disclosed. The system includes an electron beam source configured to generate a primary electron beam. The system includes a sample stage configured to secure a sample. The system includes a set of electron-optical elements configured to direct at least a portion of the primary electron beam onto a portion of the sample. The set of electron-optical elements includes an upper deflector assembly and a lower deflector assembly. The upper deflector assembly is configured to compensate for chromatic aberration in the primary electron beam caused by the lower deflector assembly. In addition, the system includes a detector assembly configured to detect electrons emanating from the surface of the sample.

    Method and System for Aberration Correction in an Electron Beam System
    7.
    发明申请
    Method and System for Aberration Correction in an Electron Beam System 审中-公开
    电子束系统中畸变校正的方法与系统

    公开(公告)号：US20160329189A1

    公开(公告)日：2016-11-10

    申请号：US15148331

    申请日：2016-05-06

    Applicant: KLA-Tencor Corporation

    Inventor： Christopher Sears ,  Xinrong Jiang ,  Sameet K. Shriyan

    IPC: H01J37/28 ,  H01J37/147 ,  H01J37/153 ,  H01J37/20

    CPC classification number: H01J37/28 ,  H01J37/1474 ,  H01J2237/1534 ,  H01J2237/1536

    Abstract: A scanning electron microscopy system is disclosed. The system includes an electron beam source configured to generate a primary electron beam. The system includes a sample stage configured to secure a sample. The system includes a set of electron-optical elements configured to direct at least a portion of the primary electron beam onto a portion of the sample. The set of electron-optical elements includes an upper deflector assembly and a lower deflector assembly. The upper deflect assembly is configured to compensate for chromatic aberration in the primary electron beam caused by the lower deflector assembly. In addition, the system includes a detector assembly positioned configured to detect electrons emanating from the surface of the sample.

    Abstract translation: 公开了一种扫描电子显微镜系统。 该系统包括被配置为产生一次电子束的电子束源。 该系统包括配置成固定样品的样品台。 该系统包括一组电子 - 光学元件，其被配置为将至少一部分一次电子束引导到样品的一部分上。 该组电子 - 光学元件包括上偏转器组件和下偏转器组件。 上偏转组件被配置为补偿由下偏转器组件引起的一次电子束中的色像差。 此外，该系统包括检测器组件，其被配置成检测从样品表面发出的电子。

    Method and system for edge-of-wafer inspection and review
    8.
    发明授权
    Method and system for edge-of-wafer inspection and review 有权

    公开(公告)号：US10056224B2

    公开(公告)日：2018-08-21

    申请号：US15231728

    申请日：2016-08-08

    Applicant: KLA-Tencor Corporation

    Inventor： Xinrong Jiang ,  Christopher Sears ,  Harsh Sinha ,  David Trease ,  David Kaz ,  Wei Ye

    IPC: H01J37/153 ,  H01J37/141

    CPC classification number: H01J37/153 ,  H01J2237/1532 ,  H01J2237/1534 ,  H01J2237/1536

    Abstract: An electron-optical system for inspecting or reviewing an edge portion of a sample includes an electron beam source configured to generate one or more electron beams, a sample stage configured to secure the sample and an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the one or more electron beams onto an edge portion of the sample. The system also includes a sample position reference device disposed about the sample and a guard ring device disposed between the edge of the sample and the sample position reference device to compensate for one or more fringe fields. One or more characteristics of the guard ring device are adjustable. The system also includes a detector assembly configured to detect electrons emanating from the surface of the sample.

    Electron beam imaging with dual Wien-filter monochromator
    10.
    发明授权
    Electron beam imaging with dual Wien-filter monochromator 有权
    电子束成像与双维恩滤光片单色仪

    公开(公告)号：US09443696B2

    公开(公告)日：2016-09-13

    申请号：US14711607

    申请日：2015-05-13

    Applicant: KLA-Tencor Corporation

    Inventor： Xinrong Jiang ,  Liqun Han

    IPC: H01J37/26 ,  H01J37/05 ,  H01J37/06 ,  H01J37/10 ,  H01J37/28

    CPC classification number: H01J37/26 ,  H01J37/05 ,  H01J37/06 ,  H01J37/10 ,  H01J37/28 ,  H01J2237/057

    Abstract: One embodiment relates to a dual Wien-filter monochromator. A first Wien filter focuses an electron beam in a first plane while leaving the electron beam to be parallel in a second plane. A slit opening allows electrons of the electron beam having an energy within an energy range to pass through while blocking electrons of the electron beam having an energy outside the energy range. A second Wien filter focuses the electron beam to become parallel in the first plane while leaving the electron beam to be parallel in the second plane. Other embodiments, aspects and features are also disclosed.

    Abstract translation: 一个实施例涉及双维尼滤波器单色仪。 第一维恩滤波器将电子束聚焦在第一平面中，同时使电子束在第二平面中平行。 狭缝开口允许具有能量范围内的能量的电子束的电子通过，同时阻挡具有能量范围外的能量的电子束的电子。 第二维恩滤波器将电子束聚焦成在第一平面中平行，同时使电子束在第二平面中平行。 还公开了其它实施例，方面和特征。

Patent Agency Ranking