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    Back-illuminated sensor with boron layer
    2.
    发明授权
    Back-illuminated sensor with boron layer 有权
    带有硼层的背照式传感器

    公开(公告)号：US09496425B2

    公开(公告)日：2016-11-15

    申请号：US13792166

    申请日：2013-03-10

    Applicant: KLA-Tencor Corporation

    Inventor： Jehn-Huar Chern ,  Ali R. Ehsani ,  Gildardo Delgado ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden

    IPC: G01N21/88 ,  H01L31/0216 ,  G01N21/95 ,  G01N21/956 ,  H01L27/146

    CPC classification number: H01L31/0216 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14806

    Abstract: An image sensor for short-wavelength light and charged particles includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

    Abstract translation: 用于短波长光和带电粒子的图像传感器包括半导体膜，形成在半导体膜的一个表面上的电路元件和在半导体膜的另一个表面上的纯硼层。 该图像传感器具有高效率和良好的稳定性，即使在高通量下连续使用多年。 图像传感器可以使用CCD（电荷耦合器件）或CMOS（互补金属氧化物半导体）技术来制造。 图像传感器可以是二维区域传感器或一维阵列传感器。 图像传感器可以包括在电子轰击的图像传感器和/或检查系统中。

    Open Plasma Lamp for Forming a Light-Sustained Plasma
    3.
    发明申请
    Open Plasma Lamp for Forming a Light-Sustained Plasma 有权
    开放式等离子灯形成轻维持等离子体

    公开(公告)号：US20150279628A1

    公开(公告)日：2015-10-01

    申请号：US14670210

    申请日：2015-03-26

    Applicant: KLA-Tencor Corporation

    Inventor： Lauren Wilson ,  Anant Chimmalgi ,  Ilya Bezel ,  Anatoly Shchemelinin ,  Matthew Derstine ,  Gildardo Delgado

    IPC: H01J37/32

    CPC classification number: H01J37/32339 ,  H01J37/32449 ,  H01J65/04

    Abstract: An open plasma lamp includes a cavity section. A gas input and gas output of the cavity section are arranged to flow gas through the cavity section. The plasma lamp also includes a gas supply assembly fluidically coupled to the gas input of the cavity section and configured to supply gas to an internal volume of the cavity section. The plasma lamp also includes a nozzle assembly fluidically coupled to the gas output of the cavity section. The nozzle assembly and cavity section are arranged such that a volume of the gas receives pumping illumination from a pump source, where a sustained plasma emits broadband radiation. The nozzle assembly is configured to establish a convective gas flow from within the cavity section to a region external to the cavity section such that a portion of the sustained plasma is removed from the cavity section by the gas flow.

    Abstract translation: 开放式等离子体灯包括空腔部分。 空腔部分的气体输入和气体输出被布置成使气体流过空腔部分。 等离子体灯还包括气体供应组件，其流体地耦合到空腔部分的气体输入并且被配置为将气体供应到空腔部分的内部容积。 等离子体灯还包括流体耦合到空腔部分的气体输出的喷嘴组件。 喷嘴组件和空腔部分布置成使得一定体积的气体从泵浦源接收泵送照明，其中持续等离子体发射宽带辐射。 喷嘴组件被配置成建立从空腔部分内到空腔部分外部的区域的对流气流，使得通过气流将一部分持续等离子体从空腔部分移除。

    System and Method for Rejuvenating an Imaging Sensor Degraded by Exposure to Extreme Ultraviolet or Deep Ultraviolet Light
    4.
    发明申请
    System and Method for Rejuvenating an Imaging Sensor Degraded by Exposure to Extreme Ultraviolet or Deep Ultraviolet Light 审中-公开
    通过暴露于极紫外线或深紫外线下降成像传感器的系统和方法

    公开(公告)号：US20130295695A1

    公开(公告)日：2013-11-07

    申请号：US13860230

    申请日：2013-04-10

    Applicant: KLA-Tencor Corporation

    Inventor： Gildardo Delgado ,  Gary Janik

    IPC: H01L21/26

    CPC classification number: H01L21/26 ,  G01J1/0228 ,  G01J1/429 ,  G01J2001/0276 ,  G01J2001/0285 ,  G01N2021/95676

    Abstract: The present invention for imaging sensor rejuvenation may include a rejuvenation illumination system configured to selectably illuminate a portion of an imaging sensor of an imaging system with illumination suitable for at least partially rejuvenating the imaging sensor degraded by exposure to at least one of extreme ultraviolet light or deep ultraviolet light; and a controller communicatively coupled to the rejuvenation illumination system and configured to direct the rejuvenation illumination system to illuminate the imaging sensor for one or more illumination cycles during a non-imaging state of the imaging sensor.

    Abstract translation: 用于成像传感器复原的本发明可以包括复原照明系统，其被配置为可选择地照射成像系统的成像传感器的一部分，所述照明适合于至少部分地恢复通过暴露于至少一种极紫外光而降级的成像传感器， 深紫外线; 以及控制器，其通信地耦合到所述复原照明系统并且被配置为引导所述复原照明系统在所述成像传感器的非成像状态期间照射所述成像传感器用于一个或多个照明周期。

    Protective Fluorine-Doped Silicon Oxide Film For Optical Components
    5.
    发明申请
    Protective Fluorine-Doped Silicon Oxide Film For Optical Components 有权
    用于光学元件的保护性氟掺杂氧化硅膜

    公开(公告)号：US20130265572A1

    公开(公告)日：2013-10-10

    申请号：US13855475

    申请日：2013-04-02

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Gildardo Delgado

    IPC: G01N21/88 ,  G02B1/11

    CPC classification number: G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  G02B1/105 ,  G02B1/11 ,  G02B1/113 ,  G02B1/115 ,  G02B1/14 ,  G02B7/16 ,  H01L31/02168 ,  Y02E10/50

    Abstract: An optical component includes a substrate and a fluorine-doped thin film formed on the substrate. This fluorine-doped thin film is dense, and thus very low absorbing and insensitive to various vacuum, temperature, and humidity conditions. This dense film has a high refractive index, which remains stable irrespective of environmental conditions. The fluorine-doped thin film can advantageously ensure low scattering, low reflectance, and high transmittance. Moreover, the fluorine-doped thin film is damage resistant to incident radiation density. The fluorine-doped thin film may be a fluorine-doped silicon oxide film having a thickness of approximately 1-10 nm and a fluorine concentration of 0.1% to 5%.

    Abstract translation: 光学部件包括在基板上形成的基板和氟掺杂薄膜。 这种氟掺杂的薄膜是致密的，因此对各种真空，温度和湿度条件的吸收非常低和不敏感。 该致密膜具有高折射率，不管环境条件如何，均保持稳定。 氟掺杂薄膜可以有利地确保低散射，低反射率和高透射率。 此外，氟掺杂薄膜对入射辐射密度具有抗损伤性。 氟掺杂薄膜可以是厚度约为1-10nm，氟浓度为0.1％至5％的氟掺杂氧化硅膜。

    Neutral atom imaging system
    6.
    发明授权
    Neutral atom imaging system 有权

    公开(公告)号：US10714307B2

    公开(公告)日：2020-07-14

    申请号：US16141150

    申请日：2018-09-25

    Applicant: KLA-Tencor Corporation

    Inventor： Ilya Bezel ,  Eugene Shifrin ,  Gildardo Delgado ,  Rudy F. Garcia

    IPC: H01J37/26 ,  H01J37/08 ,  H01J37/304 ,  H01J37/28 ,  H01J37/317 ,  H01J37/00

    Abstract: An imaging system utilizing atomic atoms is provided. The system may include a neutral atom source configured to generate a beam of neutral atoms. The system may also include an ionizer configured to collect neutral atoms scattered from the surface of a sample. The ionizer may also be configured to ionize the collected neutral atoms. The system may also include a selector configured to receive ions from the ionizer and selectively filter received ions. The system may also include one or more optical elements configured to direct selected ions to a detector. The detector may be configured to generate one or more images of the surface of the sample based on the received ions.

    Back-illuminated sensor with boron layer
    7.
    发明授权
    Back-illuminated sensor with boron layer 有权

    公开(公告)号：US10121914B2

    公开(公告)日：2018-11-06

    申请号：US15797970

    申请日：2017-10-30

    Applicant: KLA-Tencor Corporation

    Inventor： Jehn-Huar Chern ,  Ali R. Ehsani ,  Gildardo Delgado ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden

    IPC: G01N21/88 ,  H01L31/0216 ,  G01N21/95 ,  G01N21/956 ,  H01L27/146 ,  H01L27/148

    Abstract: An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

    Apparatus for purifying a controlled-pressure environment
    9.
    发明授权
    Apparatus for purifying a controlled-pressure environment 有权
    用于净化受控压力环境的装置

    公开(公告)号：US08790603B2

    公开(公告)日：2014-07-29

    申请号：US13924859

    申请日：2013-06-24

    Applicant: KLA-Tencor Corporation

    Inventor： Guorong V. Zhuang ,  Gildardo Delgado

    IPC: B01D7/00 ,  B01D53/00 ,  B01D53/74 ,  F04B53/00 ,  G05D99/00

    CPC classification number: B01J19/08 ,  C23C14/14 ,  C23C14/541 ,  F24F3/161 ,  F24F2003/1621

    Abstract: An apparatus for purifying a controlled-pressure environment in a chamber, including: a piece of lithium-aluminum alloy located in the chamber; an activation element arranged to impart energy to the piece of lithium-aluminum alloy to sublimate lithium from the piece of lithium-aluminum alloy; a feedback control system including a sensor system arranged to measure a condition within the chamber, and a controller in communication with the sensor and configured to control operation of the activation element according to an evaluation of the condition; and a collection plate located in the chamber and arranged to form a layer of the sublimated lithium on a surface of the collection plate.

    Abstract translation: 一种用于净化室内的受控压力环境的装置，包括：位于所述室中的一块锂铝合金; 激活元件，被布置成赋予所述锂铝合金片能量以从所述锂铝合金片升华锂; 反馈控制系统，包括布置成测量所述室内的状况的传感器系统，以及与所述传感器通信并被配置为根据所述条件的评估来控制所述启动元件的操作的控制器; 以及收集板，其位于所述室中并且布置成在所述收集板的表面上形成升华的锂层。

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