公开(公告)号：US12111580B2

公开(公告)日：2024-10-08

申请号：US17243912

申请日：2021-04-29

Applicant: KLA Corporation

Inventor： Amnon Manassen ,  Isaac Salib ,  Raviv Yohanan ,  Diana Shaphirov ,  Eitan Hajaj ,  Vladimir Levinski ,  Avi Abramov ,  Michael Shentcis ,  Ariel Hildesheim ,  Yoav Grauer ,  Shlomo Eisenbach ,  Etay Lavert ,  Iftach Nir

IPC: G03F7/00 ,  G01B11/27 ,  G01N21/35 ,  G01N21/956

CPC classification number: G03F7/706851 ,  G01B11/272 ,  G01N21/35 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683

Abstract: An optical metrology tool may include one or more illumination sources to generate illumination having wavelengths both within a short-wave infrared (SWIR) spectral range and outside the SWIR spectral range, illumination optics configured to direct the illumination to a sample, a first imaging channel including a first detector configured to image the sample based on a first wavelength range including at least some wavelengths in the SWIR spectral range, a second imaging channel including a second detector configured to image the sample based on a second wavelength range including at least some wavelengths outside the SWIR spectral range, and a controller. The controller may receive first images of the sample from the first detector, receive second images of the sample from the second detector, and generate an optical metrology measurement of the sample based on the first and second images.

公开(公告)号：US11532566B2

公开(公告)日：2022-12-20

申请号：US16964714

申请日：2020-06-25

Applicant: KLA CORPORATION

Inventor： Roie Volkovich ,  Liran Yerushalmi ,  Raviv Yohanan ,  Mark Ghinovker

IPC: H01L23/544 ,  G01B21/22 ,  G03F7/20

Abstract: A target and method for using the same in the measurement of misregistration between at least a first layer and a second layer formed on a wafer in the manufacture of functional semiconductor devices on the wafer, the functional semiconductor devices including functional device structures (FDSTs), the target including a plurality of measurement structures (MSTs), the plurality of MSTs being part of the first layer and the second layer and a plurality of device-like structures (DLSTs), the plurality of DLSTs being part of at least one of the first layer and the second layer, the DLSTs sharing at least one characteristic with the FDSTs and the MSTs not sharing the at least one characteristic with the FDSTs.

公开(公告)号：US12055859B2

公开(公告)日：2024-08-06

申请号：US18204662

申请日：2023-06-01

Applicant: KLA Corporation

Inventor： Inna Steely-Tarshish ,  Stefan Eyring ,  Mark Ghinovker ,  Yoel Feler ,  Eitan Hajaj ,  Ulrich Pohlmann ,  Nadav Gutman ,  Chris Steely ,  Raviv Yohanan ,  Ira Naot

IPC: G03F7/00

CPC classification number: G03F7/70633 ,  G03F7/70683

Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.

公开(公告)号：US11720031B2

公开(公告)日：2023-08-08

申请号：US17487725

申请日：2021-09-28

Applicant: KLA Corporation

Inventor： Inna Steely-Tarshish ,  Stefan Eyring ,  Mark Ghinovker ,  Yoel Feler ,  Eitan Hajaj ,  Ulrich Pohlmann ,  Nadav Gutman ,  Chris Steely ,  Raviv Yohanan ,  Ira Naot

IPC: G03F7/00 ,  G01N21/47 ,  G01N21/95 ,  G03F7/20

CPC classification number: G03F7/70633 ,  G01N21/4785 ,  G01N21/4788 ,  G01N21/9501 ,  G03F7/70625

Abstract: Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.

公开(公告)号：US20220413395A1

公开(公告)日：2022-12-29

申请号：US17487784

申请日：2021-09-28

Applicant: KLA Corporation

Inventor： Inna Steely-Tarshish ,  Stefan Eyring ,  Mark Ghinovker ,  Yoel Feler ,  Eitan Hajaj ,  Ulrich Pohlmann ,  Nadav Gutman ,  Chris Steely ,  Raviv Yohanan ,  Ira Naot

IPC: G03F7/20

Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.

公开(公告)号：US11355375B2

公开(公告)日：2022-06-07

申请号：US16931078

申请日：2020-07-16

Applicant: KLA Corporation

Inventor： Roie Volkovich ,  Liran Yerushalmi ,  Raviv Yohanan ,  Mark Ghinovker

IPC: H01L21/68 ,  G01B11/27 ,  G03F7/20

Abstract: A metrology system and metrology methods are disclosed. The metrology system comprises a set of device features on a first layer of a sample, a first set of target features on a second layer of the sample and overlapping the set of device features, and a second set of target features on the second layer of the sample and overlapping the set of device features. Relative positions of a first set of Moiré fringes and a second set of Moiré fringes indicate overlay error between the first layer of the sample and the second layer of the sample.

公开(公告)号：US11703767B2

公开(公告)日：2023-07-18

申请号：US17487784

申请日：2021-09-28

Applicant: KLA Corporation

Inventor： Inna Steely-Tarshish ,  Stefan Eyring ,  Mark Ghinovker ,  Yoel Feier ,  Eitan Hajaj ,  Ulrich Pohlmann ,  Nadav Gutman ,  Chris Steely ,  Raviv Yohanan ,  Ira Naot

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70633 ,  G03F7/70683

Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.

公开(公告)号：US20220415725A1

公开(公告)日：2022-12-29

申请号：US17487842

申请日：2021-09-28

Applicant: KLA Corporation

Inventor： Inna Steely-Tarshish ,  Stefan Eyring ,  Mark Ghinovker ,  Yoel Feler ,  Eitan Hajaj ,  Ulrich Pohlmann ,  Nadav Gutman ,  Chris Steely ,  Raviv Yohanan ,  Ira Naot

IPC: H01L21/66 ,  H01L23/544

Abstract: The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.

公开(公告)号：US20220020625A1

公开(公告)日：2022-01-20

申请号：US16931078

申请日：2020-07-16

Applicant: KLA Corporation

Inventor： Roie Volkovich ,  Liran Yerushalmi ,  Raviv Yohanan ,  Mark Ghinovker

IPC: H01L21/68 ,  G01B11/27

Abstract: A metrology system and metrology methods are disclosed. The metrology system comprises a set of device features on a first layer of a sample, a first set of target features on a second layer of the sample and overlapping the set of device features, and a second set of target features on the second layer of the sample and overlapping the set of device features. Relative positions of a first set of Moiré fringes and a second set of Moiré fringes indicate overlay error between the first layer of the sample and the second layer of the sample.

公开(公告)号：US11862524B2

公开(公告)日：2024-01-02

申请号：US17487842

申请日：2021-09-28

Applicant: KLA Corporation

Inventor： Inna Steely-Tarshish ,  Stefan Eyring ,  Mark Ghinovker ,  Yoel Feler ,  Eitan Hajaj ,  Ulrich Pohlmann ,  Nadav Gutman ,  Chris Steely ,  Raviv Yohanan ,  Ira Naot

IPC: H01L21/66 ,  H01L23/544

CPC classification number: H01L22/30 ,  H01L23/544 ,  H01L22/12

Abstract: The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.