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公开(公告)号：US11011475B2
公开(公告)日：2021-05-18
申请号：US16564008
申请日：2019-09-09
Inventor： Akira Kikitsu , Yoshinari Kurosaki , Kenichiro Yamada , Shigeki Matsunaka
IPC: H01L23/552 , H01L43/02
Abstract: According to one embodiment, an electromagnetic wave attenuator includes a multilayer member, and a magnetic member. The multilayer member includes a plurality of magnetic layers and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction from the multilayer member toward the magnetic member. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A thickness along the first direction of the magnetic member is not less than ½ of a thickness along the first direction of the multilayer member.
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公开(公告)号：US11049818B2
公开(公告)日：2021-06-29
申请号：US16564008
申请日：2019-09-09
Inventor： Akira Kikitsu , Yoshinari Kurosaki , Kenichiro Yamada , Shigeki Matsunaka
IPC: H01L23/552 , H01L43/02
Abstract: According to one embodiment, an electromagnetic wave attenuator includes a multilayer member, and a magnetic member. The multilayer member includes a plurality of magnetic layers and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction from the multilayer member toward the magnetic member. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A thickness along the first direction of the magnetic member is not less than ½ of a thickness along the first direction of the multilayer member.
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公开(公告)号：US11011474B2
公开(公告)日：2021-05-18
申请号：US16562652
申请日：2019-09-06
Inventor： Akira Kikitsu , Yoshinari Kurosaki , Kenichiro Yamada , Shigeki Matsunaka
IPC: H01L23/552 , H01F10/30 , H01F10/14 , H01F10/16
Abstract: According to one embodiment, an electromagnetic wave attenuator includes a plurality of magnetic layers, and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A first thickness along the first direction of the one of the plurality of magnetic layers is not less than ½ times a second thickness along the first direction of the one of the plurality of nonmagnetic layers.
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公开(公告)号：US12142306B2
公开(公告)日：2024-11-12
申请号：US18359982
申请日：2023-07-27
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Tazumi Nagasawa , Satoshi Shirotori , Akira Kikitsu , Yoshihiro Higashi
Abstract: According to one embodiment, a magnetic sensor includes first to sixth shields, first and second magnetic layers, a first member, and first to fourth terminals. The first magnetic layer is provided between the first shield and the second shield. The first magnetic layer is between the third shield and the fourth shield in the second direction. The second magnetic layer is provided between the first magnetic layer and the second shield. The second magnetic layer is between the fifth shield and the sixth shield in the second direction. The second magnetic layer is electrically connected to the fifth shield and the sixth shield. The first member includes a first region and a second region. The first region is provided between the third shield and the first magnetic layer. The second region is provided between the first magnetic layer and the fourth shield.
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公开(公告)号：US11946975B2
公开(公告)日：2024-04-02
申请号：US17445684
申请日：2021-08-23
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Hitoshi Iwasaki , Satoshi Shirotori , Akira Kikitsu , Yoshihiro Higashi
IPC: G01R31/382 , A61B5/245 , G01N27/90
CPC classification number: G01R31/382 , G01N27/9006 , A61B5/245
Abstract: According to one embodiment, a magnetic sensor includes a first sensor part. The first sensor part includes a first magnetic member, a first counter magnetic member, and a first magnetic element. A direction from the first magnetic member toward the first counter magnetic member is along a first direction. The first magnetic element includes one or a plurality of first extension parts. The first extension part includes a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer. The first magnetic layer includes a first portion, a first counter portion, and a first middle portion. A direction from the first portion toward the first counter portion is along the first direction. The first middle portion is between the first portion and the first counter portion. The first nonmagnetic layer is between the first counter magnetic layer and at least a portion of the first middle portion.
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Patent Agency Ranking
公开(公告)号：US11747303B2
公开(公告)日：2023-09-05
申请号：US17395183
申请日：2021-08-05
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Hitoshi Iwasaki , Satoshi Shirotori , Akira Kikitsu , Yoshihiro Higashi
IPC: G01N27/90 , G01N33/2045
CPC classification number: G01N27/9006 , G01N33/2045
Abstract: According to one embodiment of the invention, a magnetic sensor includes a first sensor part. The first sensor part includes a first magnetic member, a first counter magnetic member, and a first magnetic element. A direction from the first magnetic member to the first counter magnetic member is along a first direction. The first magnetic element includes one or a plurality of first extending portions. A first portion of the first extending portion overlaps the first magnetic member in a second direction crossing the first direction. A first counter portion of the first extending portion overlaps the first counter magnetic member in the second direction. A first direction length along the first direction of the first extending portion is longer than a third direction length along a third direction of the first extending portion. The third direction crosses a plane including the first direction and the second direction.
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公开(公告)号：US11237230B1
公开(公告)日：2022-02-01
申请号：US17169388
申请日：2021-02-05
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Hitoshi Iwasaki , Satoshi Shirotori , Akira Kikitsu , Yoshihiro Higashi
Abstract: According to one embodiment, a magnetic sensor includes a sensor part, a first circuit, and a second circuit. The sensor part includes a magnetic element part, first and second conductive members. The magnetic element part includes first to fourth magnetic elements. The first conductive member includes first to third conductive portions, and first and second middle portions. The second conductive member includes fourth to sixth conductive portions, and third and fourth middle portions. The first circuit is electrically connected to the third and sixth conductive portions. The first circuit is configured to supply a first current between the third and sixth conductive portions. The second circuit is electrically connected to a first connection point and a second connection point. The second circuit is electrically connected to first and second connection points. The second circuit is configured to supply a second current between the first and second connection points.
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公开(公告)号：US10468354B2
公开(公告)日：2019-11-05
申请号：US15908212
申请日：2018-02-28
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Akira Kikitsu , Hitoshi Iwasaki , Yoshinari Kurosaki
IPC: H01L23/552 , H01L43/02 , H01L43/08 , G11B5/39 , H01L23/31 , H01L23/00 , H01L23/498
Abstract: According to one embodiment, a semiconductor device includes a semiconductor element, and a first member. The first member includes a first nonmagnetic planar region separated from the semiconductor element in a first direction, a first magnetic planar region provided between the first nonmagnetic planar region and the semiconductor element in the first direction, and a second nonmagnetic planar region provided between the first magnetic planar region and the semiconductor element in the first direction. The first magnetic planar region includes a first end portion extending along a second direction crossing the first direction. A first magnetization direction of the first magnetic planar region is tilted with respect to the second direction.
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公开(公告)号：US09810711B2
公开(公告)日：2017-11-07
申请号：US14460450
申请日：2014-08-15
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Hideaki Fukuzawa , Michiko Hara , Yoshihiko Fuji , Yoshihiro Higashi , Shiori Kaji , Akio Hori , Tomohiko Nagata , Akiko Yuzawa , Akira Kikitsu
IPC: G01P15/08 , G01P15/105
CPC classification number: G01P15/105 , G01P15/0802 , G01P2015/0805
Abstract: An inertial sensor includes a base portion, a weight portion, a connection portion, and a first sensing element unit. The connection portion connects the weight portion and the base portion and is capable of being deformed in accordance with a change in relative position of the weight portion with respect to the position of the base portion. The first sensing element unit is provided on a first portion of the connection portion and includes a first magnetic layer, a second magnetic layer, and a nonmagnetic first intermediate layer. The nonmagnetic first intermediate layer is provided between the first magnetic layer and the second magnetic layer.
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公开(公告)号：US08976579B2
公开(公告)日：2015-03-10
申请号：US13757981
申请日：2013-02-04
Applicant: Kabushiki Kaisha Toshiba
Inventor： Hideaki Fukuzawa , Yoshiaki Fukuzumi , Hirofumi Morise , Akira Kikitsu
CPC classification number: G11C11/161 , G11C11/14 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0808 , G11C21/00
Abstract: According to one embodiment, a magnetic memory element includes: a magnetic wire, a stress application unit, and a recording/reproducing unit. The magnetic wire includes a plurality of domain walls and a plurality of magnetic domains separated by the domain walls. The magnetic wire is a closed loop. The stress application unit is configured to cause the domain walls to circle around along the closed loop a plurality of times by applying stress to the magnetic wire. The recording/reproducing unit is configured to write memory information by changing magnetizations of the circling magnetic domains as the domain walls circle around and to read the written memory information by detecting the magnetizations of the circling magnetic domains.
Abstract translation: 根据一个实施例，磁存储元件包括：磁线，应力施加单元和记录/再现单元。 磁线包括多个畴壁和由畴壁隔开的多个磁畴。 磁线是闭环。 应力施加单元被配置为通过向磁线施加应力使畴壁沿着闭合环多圈。 记录/再现单元被配置为通过随着畴壁围绕而改变环绕磁畴的磁化来写入存储器信息，并且通过检测循环磁畴的磁化来读取写入的存储器信息。
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