公开(公告)号：US09276137B2

公开(公告)日：2016-03-01

申请号：US14155998

申请日：2014-01-15

申请人： Yusuke Yamashita ,  Satoru Machida ,  Jun Saito ,  Masaru Senoo ,  Jun Okawara

发明人： Yusuke Yamashita ,  Satoru Machida ,  Jun Saito ,  Masaru Senoo ,  Jun Okawara

IPC分类号： H01L29/872 ,  H01L29/739 ,  H01L29/861 ,  H01L29/40 ,  H01L29/08 ,  H01L29/06 ,  H01L29/10 ,  H01L29/36 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L29/872 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/407 ,  H01L29/47 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/861

摘要： A diode is provided with a pillar region formed so as to extend between a barrier region and an anode electrode, contact the barrier region, and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region; and a barrier height adjusting region formed so as to be located between the pillar region and the anode electrode, and contact the pillar region and the anode electrode. The barrier height adjusting region includes at least one component selected from the group consisting of a second conductivity type semiconductor having a concentration lower than that of an anode region, the first conductivity type semiconductor having a concentration lower than that of the pillar region, and an i-type semiconductor. The barrier height adjusting region and the anode electrode are connected through a Schottky junction.

摘要翻译： 二极管设置有形成为在阻挡区域和阳极电极之间延伸的柱状区域，与阻挡区域接触，并且由浓度高于阻挡区域的第一导电型半导体构成; 以及屏障高度调节区域，形成为位于柱状区域和阳极电极之间，并且与柱状区域和阳极电极接触。 势垒高度调整区域包括选自浓度低于阳极区域的第二导电型半导体的第一导电型半导体的浓度比柱状区域低的至少一种成分，以及 i型半导体。 势垒高度调节区域和阳极电极通过肖特基结连接。

公开(公告)号：US09520465B2

公开(公告)日：2016-12-13

申请号：US14113276

申请日：2012-07-27

申请人： Yusuke Yamashita ,  Satoru Machida ,  Takahide Sugiyama ,  Jun Saito

发明人： Yusuke Yamashita ,  Satoru Machida ,  Takahide Sugiyama ,  Jun Saito

IPC分类号： H01L29/06 ,  H01L29/872 ,  H01L29/739 ,  H01L29/78 ,  H01L27/06 ,  H01L29/40 ,  H01L29/08 ,  H01L29/861 ,  H01L29/36 ,  H01L29/417 ,  H01L29/10 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L29/7813 ,  H01L27/0629 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0642 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/08 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/7806 ,  H01L29/7839 ,  H01L29/8611 ,  H01L29/872

摘要： Disclosed is a technique capable of reducing loss at the time of switching in a diode. A diode disclosed in the present specification includes a cathode electrode, a cathode region made of a first conductivity type semiconductor, a drift region made of a low concentration first conductivity type semiconductor, an anode region made of a second conductivity type semiconductor, an anode electrode made of metal, a barrier region formed between the drift region and the anode region and made of a first conductivity type semiconductor having a concentration higher than that of the drift region, and a pillar region formed so as to connect the barrier region to the anode electrode and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region. The pillar region and the anode are connected through a Schottky junction.

摘要翻译： 公开了能够在二极管切换时减少损耗的技术。 本说明书中公开的二极管包括阴极电极，由第一导电类型半导体制成的阴极区域，由低浓度第一导电类型半导体制成的漂移区域，由第二导电类型半导体制成的阳极区域，阳极电极 由金属制成的阻挡区域，形成在漂移区域和阳极区域之间并且由具有高于漂移区域的浓度的第一导电型半导体形成的势垒区域和形成为将阻挡区域连接到阳极的柱状区域 电极，并且由具有比屏障区域的浓度高的浓度的第一导电型半导体制成。 柱区域和阳极通过肖特基结连接。

公开(公告)号：US20160268252A1

公开(公告)日：2016-09-15

申请号：US14901579

申请日：2013-08-26

申请人： Jun Saito ,  Satoru Machida ,  Yusuke Yamashita

发明人： Jun Saito ,  Satoru Machida ,  Yusuke Yamashita

IPC分类号： H01L27/06 ,  H01L29/739 ,  H01L29/10 ,  H01L29/872

CPC分类号： H01L27/0629 ,  H01L27/0727 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/47 ,  H01L29/7397 ,  H01L29/872

摘要： A technology capable of suppressing a fluctuation in voltage in a diode region is provided. A resistance value between the emitter electrode and the lower body region is lower than a resistance value between the anode electrode and the lower anode region when the semiconductor device operates as a diode. A quantity of holes between the emitter electrode and the second barrier region is smaller than a quantity of holes between the anode electrode and the first barrier region.

摘要翻译： 提供了能够抑制二极管区域中的电压波动的技术。 当半导体器件作为二极管工作时，发射电极和下体区域之间的电阻值低于阳极电极和下阳极区域之间的电阻值。 发射电极和第二阻挡区域之间的一定数量的孔小于阳极电极和第一阻挡区域之间的空穴量。

公开(公告)号：US20140048847A1

公开(公告)日：2014-02-20

申请号：US14113276

申请日：2012-07-27

申请人： Yusuke Yamashita ,  Satoru Machida ,  Takahide Sugiyama ,  Jun Saito

发明人： Yusuke Yamashita ,  Satoru Machida ,  Takahide Sugiyama ,  Jun Saito

IPC分类号： H01L29/06 ,  H01L27/06 ,  H01L29/78 ,  H01L29/872 ,  H01L29/739

CPC分类号： H01L29/7813 ,  H01L27/0629 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0642 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/08 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/7806 ,  H01L29/7839 ,  H01L29/8611 ,  H01L29/872

摘要： Disclosed is a technique capable of reducing loss at the time of switching in a diode. A diode disclosed in the present specification includes a cathode electrode, a cathode region made of a first conductivity type semiconductor, a drift region made of a low concentration first conductivity type semiconductor, an anode region made of a second conductivity type semiconductor, an anode electrode made of metal, a barrier region formed between the drift region and the anode region and made of a first conductivity type semiconductor having a concentration higher than that of the drift region, and a pillar region formed so as to connect the barrier region to the anode electrode and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region. The pillar region and the anode are connected through a Schottky junction.

摘要翻译： 公开了能够在二极管切换时减少损耗的技术。 本说明书中公开的二极管包括阴极电极，由第一导电类型半导体制成的阴极区域，由低浓度第一导电类型半导体制成的漂移区域，由第二导电类型半导体制成的阳极区域，阳极电极 由金属制成的阻挡区域，形成在漂移区域和阳极区域之间并且由具有高于漂移区域的浓度的第一导电型半导体形成的势垒区域和形成为将阻挡区域连接到阳极的柱状区域 电极，并且由具有比屏障区域的浓度高的浓度的第一导电型半导体制成。 柱区域和阳极通过肖特基结连接。

公开(公告)号：US09508710B2

公开(公告)日：2016-11-29

申请号：US14901579

申请日：2013-08-26

申请人： Jun Saito ,  Satoru Machida ,  Yusuke Yamashita

发明人： Jun Saito ,  Satoru Machida ,  Yusuke Yamashita

IPC分类号： H01L29/66 ,  H01L27/06 ,  H01L29/872 ,  H01L29/739 ,  H01L29/10

CPC分类号： H01L27/0629 ,  H01L27/0727 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/47 ,  H01L29/7397 ,  H01L29/872

摘要： A technology capable of suppressing a fluctuation in voltage in a diode region is provided. A resistance value between the emitter electrode and the lower body region is lower than a resistance value between the anode electrode and the lower anode region when the semiconductor device operates as a diode. A quantity of holes between the emitter electrode and the second barrier region is smaller than a quantity of holes between the anode electrode and the first barrier region.

摘要翻译： 提供了能够抑制二极管区域中的电压波动的技术。 当半导体器件作为二极管工作时，发射电极和下体区域之间的电阻值低于阳极电极和下阳极区域之间的电阻值。 发射电极和第二阻挡区域之间的一定数量的孔小于阳极电极和第一阻挡区域之间的空穴量。

公开(公告)号：US09412737B2

公开(公告)日：2016-08-09

申请号：US14888291

申请日：2013-05-23

申请人： Jun Saito ,  Satoru Machida ,  Yusuke Yamashita

发明人： Jun Saito ,  Satoru Machida ,  Yusuke Yamashita

IPC分类号： H01L29/732 ,  H01L27/07 ,  H01L29/739 ,  H01L29/872 ,  H01L29/06 ,  H01L29/36 ,  H01L29/423

CPC分类号： H01L27/0716 ,  H01L27/0727 ,  H01L27/0766 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/36 ,  H01L29/4236 ,  H01L29/7397 ,  H01L29/872

摘要： When an IGBT has a barrier layer 10 that separates an upper body region 8a from a lower body region 8b, conductivity modulation is enhanced and on-resistance decreases. When the IGBT also has a Schottky contact region 6 that extends to reach the barrier layer 10, a diode structure can be obtained. In this case, however, a saturation current increases as well as short circuit resistance decreases. The Schottky contact region 6 is separated from the emitter region 4 by the upper body region 8a. By selecting an impurity concentration in the region 8a, an increase in a saturation current can be avoided. Alternatively, a block structure that prevents a depletion layer extending from the region 6 into the region 8a from joining a depletion layer extending from the region 4 into the region 8a may be provided in an area separating the region 6 from the region 4.

摘要翻译： 当IGBT具有将上部区域8a与下部主体区域8b分隔开的阻挡层10时，电导率调制增强，导通电阻降低。 当IGBT也具有延伸到达阻挡层10的肖特基接触区域6时，可以获得二极管结构。 然而，在这种情况下，饱和电流增加以及短路电阻降低。 肖特基接触区域6通过上体区域8a与发射极区域4分离。 通过选择区域8a中的杂质浓度，可以避免饱和电流的增加。 或者，可以在将区域6与区域4分离的区域中设置防止从区域6延伸到区域8a中的耗尽层与从区域4延伸到区域8a的耗尽层连接的块结构。

公开(公告)号：US09099521B2

公开(公告)日：2015-08-04

申请号：US14182923

申请日：2014-02-18

申请人： Yusuke Yamashita ,  Satoru Machida ,  Jun Saito

发明人： Yusuke Yamashita ,  Satoru Machida ,  Jun Saito

IPC分类号： H01L29/739 ,  H01L29/861 ,  H01L29/08 ,  H01L29/10

CPC分类号： H01L29/7395 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/7397 ,  H01L29/8611

摘要： A reverse conducting IGBT that includes an insulated gate; a semiconductor layer having a first conductivity type drift region, a second conductivity type body region, a first conductivity type emitter region, and a second conductivity type intermediate region; and an emitter electrode provided on a surface of the semiconductor layer. The first conductivity type drift region of the semiconductor layer contacts the insulated gate. The second conductivity type body region of the semiconductor layer is provided on the drift region and contacts the insulated gate. The first conductivity type emitter region of the semiconductor layer is provided on the body region and contacts the insulated gate. The second conductivity type intermediate region of the semiconductor layer is provided on the emitter region and is interposed between the emitter region and the emitter electrode.

摘要翻译： 包括绝缘栅极的反向导通IGBT; 具有第一导电类型漂移区域，第二导电类型体区域，第一导电类型发射极区域和第二导电类型中间区域的半导体层; 以及设置在半导体层的表面上的发射电极。 半导体层的第一导电型漂移区域与绝缘栅极接触。 半导体层的第二导电类型体区设置在漂移区上并与绝缘栅接触。 半导体层的第一导电型发射极区域设置在主体区域上并与绝缘栅极接触。 半导体层的第二导电类型中间区域设置在发射极区域上并且插入在发射极区域和发射极电极之间。

公开(公告)号：US09153576B2

公开(公告)日：2015-10-06

申请号：US14584793

申请日：2014-12-29

申请人： Hiroshi Hosokawa ,  Yusuke Yamashita ,  Satoru Machida

发明人： Hiroshi Hosokawa ,  Yusuke Yamashita ,  Satoru Machida

IPC分类号： H01L27/06 ,  H01L29/739

CPC分类号： H01L27/0664 ,  H01L29/1095 ,  H01L29/7391 ,  H01L29/7397

摘要： A semiconductor substrate comprises an IGBT region and a diode region. The IGBT region comprises: an n-type emitter region; a p-type IGBT body region; an n-type IGBT barrier region; an n-type IGBT drift region; a p-type collector region; a first trench; a first insulating layer; and a first gate electrode. The diode region comprises: a p-type diode top body region; an n-type diode barrier region; a p-type diode bottom body region; an n-type cathode region; a second trench; a second insulating layer; and a second gate electrode. An n-type impurity density of a specific part of the diode barrier region making contact with the second insulating layer is higher than an n-type impurity density of the IGBT barrier region.

摘要翻译： 半导体基板包括IGBT区域和二极管区域。 IGBT区域包括：n型发射极区域; p型IGBT体区域; n型IGBT势垒区域; n型IGBT漂移区; p型集电极区域; 第一个沟槽 第一绝缘层; 和第一栅电极。 二极管区域包括：p型二极管顶体区域; n型二极管阻挡区域; p型二极管底部区域; n型阴极区域; 第二个沟槽 第二绝缘层; 和第二栅电极。 与第二绝缘层接触的二极管阻挡区域的特定部分的n型杂质浓度高于IGBT阻挡区域的n型杂质浓度。

公开(公告)号：US08550510B2

公开(公告)日：2013-10-08

申请号：US13475663

申请日：2012-05-18

申请人： Hiroo Mizoguchi ,  Yusuke Yamashita

发明人： Hiroo Mizoguchi ,  Yusuke Yamashita

IPC分类号： B60R19/02

CPC分类号： B60R19/24 ,  B60R2019/247

摘要： A vehicle bumper is provided that can increase the rigidity while ensuring a superior drainage capability in the vicinity of the location where the bumper is attached to a side face member. A vehicle bumper includes a middle portion extending in vehicle width direction, two lateral portions extending from the two ends of the middle portion towards side face members (front fender panels), an upper flange protruding inward, with respect to a vehicle body, from an upper edge of the lateral portions, an attachment flange that is continuous with the upper flange near an end of the lateral portions and protruding further inside the vehicle body than the upper flange, a long groove formed by a depression in an upper face of the upper flange, at least one rib that partitions the long groove in vehicle width direction into depressions, and water drainage holes formed in the depressions.

摘要翻译： 提供一种车辆保险杠，其可以在保险杠附接到侧面构件的位置附近确保优良的排水能力的同时增加刚性。 车辆缓冲器包括沿车辆宽度方向延伸的中间部分，从中间部分的两端朝向侧面部件（前翼子板）延伸的两个侧部，相对于车身向内突出的上凸缘， 侧部的上边缘，与上部凸缘连续的附接凸缘，该凸缘在侧部的端部附近并且比上凸缘进一步在车体的内部突出，由上部的上表面中的凹部形成的长槽 凸缘，将沿车宽方向的长槽分隔成凹部的至少一个肋，以及形成在凹部中的排水孔。

公开(公告)号：US20120292931A1

公开(公告)日：2012-11-22

申请号：US13475663

申请日：2012-05-18

申请人： Hiroo MIZOGUCHI ,  Yusuke Yamashita

发明人： Hiroo MIZOGUCHI ,  Yusuke Yamashita

IPC分类号： B60R19/02

CPC分类号： B60R19/24 ,  B60R2019/247

摘要： A vehicle bumper is provided that can increase the rigidity while ensuring a superior drainage capability in the vicinity of the location where the bumper is attached to a side face member. A vehicle bumper includes a middle portion extending in vehicle width direction, two lateral portions extending from the two ends of the middle portion towards side face members (front fender panels), an upper flange protruding inward, with respect to a vehicle body, from an upper edge of the lateral portions, an attachment flange that is continuous with the upper flange near an end of the lateral portions and protruding further inside the vehicle body than the upper flange, a long groove formed by a depression in an upper face of the upper flange, at least one rib that partitions the long groove in vehicle width direction into depressions, and water drainage holes formed in the depressions.

摘要翻译： 提供一种车辆保险杠，其可以在保险杠附接到侧面构件的位置附近确保优良的排水能力的同时增加刚性。 车辆缓冲器包括沿车辆宽度方向延伸的中间部分，从中间部分的两端朝向侧面部件（前翼子板）延伸的两个侧部，相对于车身向内突出的上凸缘， 侧部的上边缘，与上部凸缘连续的附接凸缘，该凸缘在侧部的端部附近并且比上凸缘进一步在车体的内部突出，由上部的上表面中的凹部形成的长槽 凸缘，将沿车宽方向的长槽分隔成凹部的至少一个肋，以及形成在凹部中的排水孔。