A semiconductor substrate comprises an IGBT region and a diode region. The IGBT region comprises: an n-type emitter region; a p-type IGBT body region; an n-type IGBT barrier region; an n-type IGBT drift region; a p-type collector region; a first trench; a first insulating layer; and a first gate electrode. The diode region comprises: a p-type diode top body region; an n-type diode barrier region; a p-type diode bottom body region; an n-type cathode region; a second trench; a second insulating layer; and a second gate electrode. An n-type impurity density of a specific part of the diode barrier region making contact with the second insulating layer is higher than an n-type impurity density of the IGBT barrier region.