Apparatus, memory device controller and method of controlling a memory device
    1.
    发明授权
    Apparatus, memory device controller and method of controlling a memory device 有权
    装置,存储装置控制器和控制存储装置的方法

    公开(公告)号:US08161320B2

    公开(公告)日:2012-04-17

    申请号:US11606900

    申请日:2006-12-01

    IPC分类号: G06F11/00

    摘要: An apparatus, memory device controller and method of controlling a memory device are provided. The example apparatus may include a bad block bitmap referencing unit configured to obtain bad block information from a bad block bitmap based on a given memory address, the given memory address being one of a logical memory address and a physical memory address corresponding to the logical memory address, the bad block information indicating whether a given memory block corresponding to the given memory address is a bad block and a memory mapping unit configured to obtain the physical memory address corresponding to the logical memory address, and configured to obtain a reserved physical memory address corresponding to the physical memory address if the bad block information indicates that the given memory block is a bad block. In an example, the apparatus may be embodied as a memory device controller including a flash translation layer (FTL).

    摘要翻译: 提供了一种设备,存储器件控制器和控制存储器件的方法。 该示例设备可以包括坏块位图参考单元,其被配置为基于给定的存储器地址从坏块位图获得坏块信息,给定存储器地址是与逻辑存储器对应的逻辑存储器地址之一和物理存储器地址 指示与给定存储器地址相对应的给定存储块是否为坏块的坏块信息和被配置为获得与逻辑存储器地址对应的物理存储器地址的存储器映射单元,并且被配置为获得预留的物理存储器地址 对应于物理存储器地址,如果坏块信息指示给定的存储器块是坏块。 在一个示例中,该装置可以被实现为包括闪存转换层(FTL)的存储器件控制器。

    Apparatus, memory device controller and method of controlling a memory device
    2.
    发明申请
    Apparatus, memory device controller and method of controlling a memory device 有权
    装置,存储装置控制器和控制存储装置的方法

    公开(公告)号:US20080155317A1

    公开(公告)日:2008-06-26

    申请号:US11606900

    申请日:2006-12-01

    IPC分类号: G06F11/00

    摘要: An apparatus, memory device controller and method of controlling a memory device are provided. The example apparatus may include a bad block bitmap referencing unit configured to obtain bad block information from a bad block bitmap based on a given memory address, the given memory address being one of a logical memory address and a physical memory address corresponding to the logical memory address, the bad block information indicating whether a given memory block corresponding to the given memory address is a bad block and a memory mapping unit configured to obtain the physical memory address corresponding to the logical memory address, and configured to obtain a reserved physical memory address corresponding to the physical memory address if the bad block information indicates that the given memory block is a bad block. In an example, the apparatus may be embodied as a memory device controller including a flash translation layer (FTL).

    摘要翻译: 提供了一种设备,存储器件控制器和控制存储器件的方法。 该示例设备可以包括坏块位图参考单元,其被配置为基于给定的存储器地址从坏块位图获得坏块信息,给定存储器地址是与逻辑存储器对应的逻辑存储器地址之一和物理存储器地址 指示与给定存储器地址相对应的给定存储块是否为坏块的坏块信息和被配置为获得与逻辑存储器地址对应的物理存储器地址的存储器映射单元,并且被配置为获得预留的物理存储器地址 对应于物理存储器地址,如果坏块信息指示给定的存储器块是坏块。 在一个示例中,该装置可以被实现为包括闪存转换层(FTL)的存储器件控制器。

    Incremental merge methods and memory systems using the same
    4.
    发明授权
    Incremental merge methods and memory systems using the same 失效
    增量合并方法和使用相同的内存系统

    公开(公告)号:US07529879B2

    公开(公告)日:2009-05-05

    申请号:US10990065

    申请日:2004-11-16

    IPC分类号: G06F12/02

    CPC分类号: G06F12/0246 G06F2212/7205

    摘要: Memory systems and methods of controlling a flash memory are provided that execute one of a plurality of merge stages of an incremental merge operation responsive to receiving a command to the flash memory. Executing one of a plurality of merge stages may include receiving a command to the flash memory, determining whether the flash memory is executing an incremental merge operation and executing a next merge stage of the incremental merge operation if the flash memory is executing an incremental merge operation.

    摘要翻译: 提供了控制闪速存储器的存储器系统和方法,其响应于接收到闪速存储器的命令而执行增量合并操作的多个合并级中的一个。 执行多个合并阶段中的一个可以包括:如果闪存正在执行增量合并操作,则向闪存接收命令,确定闪存是否正在执行增量合并操作并执行增量合并操作的下一个合并阶段 。