公开(公告)号：US20070208557A1

公开(公告)日：2007-09-06

申请号：US11367886

申请日：2006-03-03

申请人： Jin Li ,  James Johnston ,  Wai Chan

发明人： Jin Li ,  James Johnston ,  Wai Chan

IPC分类号： G10L19/00

CPC分类号： G10L19/24 ,  G10L19/04

摘要： The perceptual scalable audio coding/decoding technique lies in the use of a psychoacoustic mask to guide residue coding in enhancement layer coders. At the encoder, a psychoacoustic mask is calculated for the enhancement layer coders or is simply extracted from the coded base layer bitstream. One can also decode the coded base layer bitstream into the audio waveform, and calculate the psychoacoustic mask from the decoded base layer waveform. Furthermore, a predictive technology can be used to refine the psychoacoustic mask derived from the base layer bitstream to form a more accurate psychoacoustic mask of the enhancement layer. In addition, one can calculate the enhancement layer psychoacoustic mask from the original audio, and send the difference between the enhancement layer psychoacoustic mask and the base layer psychoacoustic mask as side information to the decoder. This psychoacoustic mask may then be used for the perceptual coding and decoding of the residue.

摘要翻译： 感知可伸缩音频编码/解码技术在于使用心理声学掩模来指导增强层编码器中的残留编码。 在编码器处，为增强层编码器计算心理声学掩模，或简单地从编码的基本层比特流中提取。 还可以将编码的基本层比特流解码为音频波形，并从解码的基本层波形计算心理声学掩模。 此外，可以使用预测技术来改善从基本层比特流导出的心理声学掩模，以形成增强层的更准确的心理声学掩模。 另外，可以从原始音频计算增强层心理声学掩模，并将增强层心理声学掩模和基础层心理声学掩模之间的差异作为辅助信息发送到解码器。 然后可以将该心理声学掩模用于残留物的感知编码和解码。

公开(公告)号：US08512303B2

公开(公告)日：2013-08-20

申请号：US13697014

申请日：2011-05-10

申请人： Alastair Willoughby ,  Mark Rogers ,  Gary Stacey ,  Wai Chan

发明人： Alastair Willoughby ,  Mark Rogers ,  Gary Stacey ,  Wai Chan

IPC分类号： A61F5/44

CPC分类号： A61F5/445 ,  A61F5/448

摘要： An ostomy body side member with a sealing member is provided. The sealing member has a fixed base member defining an opening having a first diameter and a resilient sealing element comprising a stoma receiving orifice defining an inner boundary. The inner boundary of the stoma receiving orifice has a second diameter that is smaller than the first diameter of the frame. The sealing member is also provided with at least one adjustment member coupled between the fixed base member and the resilient sealing element. Furthermore, an alignment member for adjusting the tension of the at least one adjustment member is provided thereby allowing the diametrical dimension of the stoma sealing orifice to be adjusted from a first diameter to a second diameter.

摘要翻译： 提供具有密封构件的造口体侧构件。 密封构件具有限定具有第一直径的开口的固定基部构件和包括限定内部边界的造口接收孔的弹性密封元件。 造口接收孔的内边界具有小于框架的第一直径的第二直径。 密封构件还设置有联接在固定基部构件和弹性密封元件之间的至少一个调节构件。 此外，提供了用于调节至少一个调节构件的张力的对准构件，从而允许气孔密封孔的直径尺寸从第一直径调节到第二直径。

公开(公告)号：US20090006948A1

公开(公告)日：2009-01-01

申请号：US11824560

申请日：2007-06-29

申请人： Jared R. Parker ,  Sangya Singh ,  Greg Prickril ,  Wai Chan

发明人： Jared R. Parker ,  Sangya Singh ,  Greg Prickril ,  Wai Chan

IPC分类号： G06F3/00 ,  G06F17/00

CPC分类号： H04L65/403 ,  G06F3/0483 ,  G06F3/0484

摘要： An integrated collaborative user interface for a document editor is provided. The integrated collaborative user interface includes a document pane, document details pane and a section details pane. Document details and section details are obtained and provided to authors. A collaborative author views the document details, section details and provides updates to a document in the document editor. Changes are then refreshed to the authors to provide a consistent and up-to-date status of the document.

摘要翻译： 提供了一个用于文档编辑器的集成协作用户界面。 集成协作用户界面包括文档窗格，文档详细信息窗格和部分详细信息窗格。 文件细节和部分细节获得并提供给作者。 合作作者查看文档详细信息，部分详细信息，并在文档编辑器中提供对文档的更新。 然后将更改刷新给作者以提供文档的一致和最新状态。

公开(公告)号：US20080067588A1

公开(公告)日：2008-03-20

申请号：US11982792

申请日：2007-11-05

申请人： Richard Williams ,  Donald Disney ,  Jun-Wei Chen ,  Wai Chan ,  HyungSik Ryu

发明人： Richard Williams ,  Donald Disney ,  Jun-Wei Chen ,  Wai Chan ,  HyungSik Ryu

IPC分类号： H01L29/78

CPC分类号： H01L29/0847 ,  H01L21/761 ,  H01L21/823462 ,  H01L21/823481 ,  H01L21/823493 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/088 ,  H01L27/098 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/402 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/66106 ,  H01L29/66659 ,  H01L29/66704 ,  H01L29/66901 ,  H01L29/7825 ,  H01L29/7835 ,  H01L29/808 ,  H01L29/866 ,  H01L2924/0002 ,  H01L2924/00

摘要： All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a non-isolated extended drain or drifted MOS device, a lateral trench DMOS, an isolated lateral DMOS, JFET and depletion-mode devices, and P-N diode clamps and rectifiers and junction terminations. Since the processes eliminate the need for high temperature processing and employ “as-implanted” dopant profiles, they constitute a modular architecture which allows devices to be added or omitted to the IC without the necessity of altering the processes used to produce the remaining devices.

摘要翻译： 所有低温工艺都用于制造不包括外延层的衬底中的各种半导体器件。 这些器件包括非隔离的横向DMOS，非隔离的扩展漏极或漂移的MOS器件，横沟DMOS，隔离的横向DMOS，JFET和耗尽型器件以及P-N二极管钳位和整流器和结终端。 由于该工艺消除了对高温处理的需要并采用“植入式”掺杂剂分布，所以它们构成了模块化结构，其允许将器件添加或省略到IC中，而无需改变用于产生剩余器件的工艺。

公开(公告)号：US20070088064A1

公开(公告)日：2007-04-19

申请号：US11611161

申请日：2006-12-15

申请人： Wai Chan ,  John Evans ,  Geoffrey Stemp ,  Neil Upton ,  Robert Willette

发明人： Wai Chan ,  John Evans ,  Geoffrey Stemp ,  Neil Upton ,  Robert Willette

IPC分类号： A61K31/424 ,  A61K31/353 ,  C07D491/02

CPC分类号： C07D409/06 ,  C07D311/68 ,  C07D409/12 ,  C07D498/04

摘要： A compound of formula (I) or pharmaceutically acceptable salt thereof: wherein: either Y is N and R2 is hydrogen, or Y is C—R1 where: either one of R1 and R2 is hydrogen and the other is selected from the class of hydrogen, C3-8 cycloalkyl, C1-6 alkyl optionally interrupted by oxygen or substituted by hydroxy, C1-6 alkoxy or substituted aminocarbonyl, C1-6 alkylcarbonyl, C1-6 alkoxycarbonyl, C1-6 alkylcarbonyloxy, C1-6 alkoxy, nitro, cyano, halo, trifluoromethyl, CF3S, or a group CF3-A-, where A is —CF2—, —CO—, —CH2—, CH(OH), SO2, SO, CH2—O, or CONH, or a group CF2H-A′- where A′ is oxygen, sulphur, SO, SO2, CF2 or CFH; trifluoromethoxy, C1-6 alkylsulphinyl, perfluoro C2-6 alkylsulphonyl, C1-6 alkylsulphonyl, C1-6 alkoxysulphinyl, C1-6 alkoxysulphonyl, aryl, heteroaryl, arylcarbonyl, heteroarylcarbonyl, phosphono, arylcarbonyloxy, heteroarylcarbonyloxy, arylsulphinyl, heteroarylsulphinyl, arylsulphonyl, heteroarylsulphonyl in which any aromatic moiety is optionally substituted, C1-6 alkylcarbonylamino, C1-6 alkoxycarbonylamino, C1-6 alkyl-thiocarbonyl, C1-6 alkoxy-thiocarbonyl, C1-6 alkyl-thiocarbonyloxy, 1-mercapto C2-7 alkyl, formyl, or aminosulphinyl, aminosulphonyl or aminocarbonyl, any amino moiety being optionally substituted by one or two C1-6 alkyl groups, or C1-6 alkylsulphinylamino, C1-6 alkylsulphonylamino, C1-6 alkoxysulphinylamino or C1-6 alkoxysulphonylamino, or ethylenyl terminally substituted by C1-6 alkylcarbonyl, nitro or cyano, or —C(C1-6 alkyl)NOH or —C(C1-6 alkyl)NNH2, or one of R1 and R2 is nitro, cyano or C1-3 alkylcarbonyl and the other is methoxy or amino optionally substituted by one or two C1-6 alkyl or by C2-7 alkanoyl; or R1 and R2 together are —(CH2)4— or —CH═CH—CH═CH—, or form an optionally substituted triazole or oxadiazole ring; one of R3 and R4 is hydrogen or C1-4 alkyl and the other is C1-4 alkyl, CF3 or CH2 Xa where Xa is fluoro, chloro, bromo, iodo, C1-4 alkoxy, hydroxy, C1-4 alkylcarbonyloxy, —S—C1-4 alkyl, nitro, amino optionally substituted by one or two C1-4 alkyl groups; cyano or C1-4 alkoxycarbonyl or R3 and R4 together are C2-5 polymethylene optionally substituted by C1-4 alkyl; R5 is C1-6 alkylcarbonyloxy, benzoyloxy, ONO2, benzyloxy, phenyloxy or C1-6 alkoxy and R6 and R9 are hydrogen or R5 is hydroxy and R6 is hydrogen or C1-2 alkyl and R9 is hydrogen; R7 is heteroaryl or phenyl; both of which are optionally substituted one or more times independently with a group or atom selected from chloro, fluoro, bromo, iodo, nitro, amino optionally substituted once or twice by C1-4 alkyl, cyano, azido, C1-4 alkyl, C1-4 alkoxy, trifluoromethoxy and trifluoromethyl; R8 is hydrogen; C1-6 alkyl, OR9 or NHCOR10 wherein R9 is hydrogen, C1-6 alkyl, formyl, C1-6 alkanoyl, aroyl or aryl-C1-6 alkyl and R10 is hydrogen, C1-6 alkyl, C1-6 alkoxy, mono or di C1-6 alkyl amino, amino, amino-C1-6 alkyl, hydroxy-C1-6 alkyl, halo-C1-6 alkyl, C1-6 acyloxy-C1-6 alkyl, C1-6 alkoxycarbonyl-C1-6-alkyl, aryl or heteroaryl; the R8—N—CO—R7 group being cis to the R5 group; and X is oxygen or NR10 where R10 is hydrogen or C1-6 alkyl with the proviso that the compound is not racemic cis-4-benzoylamino-6-cyano-3,4-dihydro-2,2-dimethyl-2H-benzo[b]pyran-3-ol.

公开(公告)号：US20070013419A1

公开(公告)日：2007-01-18

申请号：US11353898

申请日：2006-02-13

申请人： Deepak Ayyagari ,  Wai Chan

发明人： Deepak Ayyagari ,  Wai Chan

IPC分类号： H03L7/06

CPC分类号： H04L41/044 ,  H04B2203/5445 ,  H04L41/0654 ,  H04L69/40 ,  H04W48/12 ,  H04W84/20

摘要： The embodiments of the present invention provide methods, systems, and devices for improving network management in a centralized network, which typically includes a central coordinator (CCO) that manages and schedules activities within the network. The embodiments of the invention provide a manner of selecting a CCO, including a backup CCO, best suited to manage the network based on a set of rules. Furthermore, the embodiments provide a manner of transferring the current CCO functions to a new CCO, e.g., via message exchanges. Moreover, a process of a backup CCO assuming the function of an unavailable CCO is also described.

摘要翻译： 本发明的实施例提供了用于改进集中式网络中的网络管理的方法，系统和设备，其通常包括管理和调度网络内的活动的中央协调器（CCO）。 本发明的实施例提供了一种选择最适合于基于一组规则来管理网络的CCO（包括备用CCO）的方式。 此外，实施例提供了将当前CCO功能传送到新的CCO的方式，例如通过消息交换。 此外，还描述了假设不可用CCO的功能的备份CCO的处理。

公开(公告)号：US20060125444A1

公开(公告)日：2006-06-15

申请号：US11009238

申请日：2004-12-10

申请人： Chiu Nang Wilson Lam ,  Wai Chan

发明人： Chiu Nang Wilson Lam ,  Wai Chan

IPC分类号： H02J7/00

CPC分类号： H01M10/42 ,  H01M2/1022 ,  H01M10/46 ,  H02J7/0013 ,  H02J7/0042

摘要： An adapter battery unit for backup powering of a video camera device comprises a battery unit electrically and selectively connectable to an electronic device and is electrically and selectively connectable with a backup battery device. The adapter battery unit can be connected to the backup battery pack during operation of the electronic device without interruption in the power flow to the electronic device. In operation, the adapter battery unit supplies power to the camera device during normal operation of the camera. However, as the main battery in the adapter battery unit becomes discharged, a backup battery may be attached to the adapter battery without interrupting flow of power to the electronic device. In addition, when the adapter battery is connected to an external a/c power source, the adapter battery becomes charged and also acts as a charger to charge up the backup battery.

摘要翻译： 用于备用摄像机装置供电的适配器电池单元包括电气和选择性地可连接到电子设备的电池单元，并且可与备用电池设备电气和选择性地连接。 适配器电池单元可以在电子设备的操作期间连接到备用电池组，而不会中断到电子设备的电力流。 在操作中，适配器电池单元在相机的正常操作期间为相机设备供电。 然而，随着适配器电池单元中的主电池放电，备用电池可以被连接到适配器电池而不会中断向电子设备供电的流动。 此外，当适配器电池连接到外部a / c电源时，适配器电池已充电，并充当充电器以对备用电池充电。

公开(公告)号：US20060110855A1

公开(公告)日：2006-05-25

申请号：US10994790

申请日：2004-11-22

申请人： Yiu Kwan ,  Wai Chan

发明人： Yiu Kwan ,  Wai Chan

IPC分类号： H01L21/50

CPC分类号： H01L23/49582 ,  H01L24/45 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01047 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/00 ,  H01L2224/48

摘要： A leadframe having a metallic substrate and comprising layers of plated material, and a method of manufacturing said leadframe are provided. The substrate is plated with a layer of oxidizable material comprising nickel and a noble metal is selectively plated on the layer of oxidizable material. Thereafter, an exposed portion of the oxidizable material that is not plated with the noble metal is passivated to enhance adhesion of an encapsulation compound molded to the leadframe.

公开(公告)号：US20050269597A1

公开(公告)日：2005-12-08

申请号：US11204216

申请日：2005-08-15

申请人： Richard Williams ,  Michael Cornell ,  Wai Chan

发明人： Richard Williams ,  Michael Cornell ,  Wai Chan

IPC分类号： H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L21/8224 ,  H01L21/8228 ,  H01L21/8234 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/082 ,  H01L27/088 ,  H01L29/73 ,  H01L29/732 ,  H01L29/739 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： H01L27/0826 ,  H01L21/8224 ,  H01L21/82285 ,  H01L27/0821 ,  H01L29/6625 ,  H01L29/66272 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor substrate includes a pair of trenches filled with a dielectric material. Dopant introduced into the mesa between the trenches is limited from diffusing laterally when the substrate is subjected to thermal processing. Therefore, semiconductor devices can be spaced more closely together on the substrate, and the packing density of the devices can be increased. Also trench constrained doped region diffuse faster and deeper than unconstrained diffusions, thereby reducing the time and temperature needed to complete a desired depth diffusion. The technique may be used for semiconductor devices such as bipolar transistors as well as isolation regions that electrically isolate the devices from each other. In one group of embodiments, a buried layer is formed at an interface between an epitaxial layer and a substrate, at a location generally below the dopant in the mesa. When the substrate is subjected to thermal processing, the buried layer diffuses upward, the dopant in the mesa diffuses downward until the two dopants merge to form an isolation region or a sinker extending downward from the surface of the epitaxial layer to the buried layer. In another embodiment, dopant is implanted between dielectrically filled trenches at a high energy up to several MeV, then diffused, combining the benefits of deep implantation and trenched constrained diffusion to achive deep diffusions with a minimal thermal budget.

公开(公告)号：US20050158939A1

公开(公告)日：2005-07-21

申请号：US11067421

申请日：2005-02-25

申请人： Richard Williams ,  Michael Cornell ,  Wai Chan

发明人： Richard Williams ,  Michael Cornell ,  Wai Chan

IPC分类号： H01L21/331 ,  H01L21/329 ,  H01L21/761 ,  H01L21/8222 ,  H01L21/8238 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/08 ,  H01L27/092 ,  H01L29/732 ,  H01L29/861 ,  H01L21/336 ,  H01L23/62

CPC分类号： H01L21/26513 ,  H01L21/743 ,  H01L21/761 ,  H01L21/823878 ,  H01L21/823892 ,  H01L27/0629 ,  H01L27/0928 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/42368 ,  H01L29/66136 ,  H01L29/6625 ,  H01L29/735 ,  H01L29/7816 ,  H01L29/8611 ,  H01L2924/0002 ,  H01L2924/00

摘要： An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does not diffuse significantly. As a result, the dimensions of the isolation structure are limited and defined, thereby allowing a higher packing density than obtainable using conventional processes which include the growth of an epitaxial layer and diffusion of the dopants. In one group of embodiments, the isolation structure includes a deep layer and a sidewall which together form a cup-shaped structure surrounding an enclosed region in which the isolated semiconductor device may be formed. The sidewalls may be formed by a series of pulsed implants at different energies, thereby creating a stack of overlapping implanted regions.