公开(公告)号：US09876067B2

公开(公告)日：2018-01-23

申请号：US14778578

申请日：2014-03-12

申请人： JAPAN SCIENCE AND TECHNOLOGY AGENCY

发明人： Tatsuya Shimoda ,  Eisuke Tokumitsu ,  Masatoshi Onoue ,  Takaaki Miyasako

IPC分类号： H01L21/02 ,  H01L49/02 ,  H01L29/51

CPC分类号： H01L28/40 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/02269 ,  H01L28/56 ,  H01L28/60 ,  H01L28/87 ,  H01L28/91 ,  H01L29/513

摘要： The invention provides a dielectric layer having high relative permittivity with low leakage current and excellent flatness. A dielectric layer 30a according to the invention is made of multilayer oxide including a first oxide layer 31 made of oxide consisting of bismuth (Bi) and niobium (Nb) or oxide consisting of bismuth (Bi), zinc (Zn), and niobium (Nb) (possibly including inevitable impurities) and a second oxide layer 32 made of oxide of one type (possibly including inevitable impurities) selected from the group of oxide consisting of lanthanum (La) and tantalum (Ta), oxide consisting of lanthanum (La) and zirconium (Zr), and oxide consisting of strontium (Sr) and tantalum (Ta).

公开(公告)号：US09293257B2

公开(公告)日：2016-03-22

申请号：US14357167

申请日：2012-10-25

申请人： Japan Science and Technology Agency

发明人： Tatsuya Shimoda ,  Eisuke Tokumitsu ,  Masatoshi Onoue ,  Takaaki Miyasako

IPC分类号： C01G29/00 ,  C01G33/00 ,  H01G4/30 ,  H01G4/12 ,  B05D5/12 ,  H01L21/02 ,  H01L29/84 ,  H01L49/02 ,  H01L27/01 ,  B81C1/00 ,  B81B7/00 ,  H01L21/768 ,  H01L21/316

CPC分类号： H01G4/1254 ,  H01G4/1263 ,  H01G4/306 ,  H01L21/02205 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/76817 ,  H01L27/016 ,  H01L28/40 ,  H01L29/84

摘要： A solid-state electronic device according to the present invention includes: an oxide layer (possibly containing inevitable impurities) that is formed by heating, in an atmosphere containing oxygen, a precursor layer obtained from a precursor solution as a start material including both a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) as solutes, the oxide layer consisting of the bismuth (Bi) and the niobium (Nb); wherein the oxide layer is formed by heating at a heating temperature from 520° C. to 650° C.

摘要翻译： 根据本发明的固态电子器件包括：氧化物层（可能含有不可避免的杂质），其通过在包含氧气的气氛中加热由作为起始材料的前体溶液获得的前体层而形成，该起始材料包括前体 含有铋（Bi）和含有铌（Nb）作为溶质的前体，由铋（Bi）和铌（Nb）构成的氧化物层。 其中通过在520℃至650℃的加热温度下加热形成氧化物层。

公开(公告)号：US20150076487A1

公开(公告)日：2015-03-19

申请号：US14386811

申请日：2013-03-18

申请人： JAPAN SCIENCE AND TECHNOLOGY AGENCY

发明人： Tatsuya Shimoda ,  Satoshi Inoue ,  Tue Trong Phan ,  Takaaki Miyasako ,  Jinwang Li

IPC分类号： H01L29/66 ,  H01L29/786

CPC分类号： H01L29/78696 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.

摘要翻译： 根据本发明的薄膜晶体管100包括栅电极20，沟道44和设置在栅电极20和沟道44之间并由氧化物（可能包含不可避免的杂质）的栅极绝缘层34;这适用于下文中的氧化物 ）含有镧和锆。 通道44由包含铟，锌和锆（Zr）的第一氧化物构成，原子比为0.015以上且0.075以下，铟相对于原子比为1，第二氧化物含有铟和锆 相对于原子比为1的铟（In）的原子比为0.055以上且0.16以下的原子比（Zr），或相对于原子比为0.055以上且0.16以下的含有铟和镧的第3氧化物 到In（In）的原子比为1。

公开(公告)号：US09293325B2

公开(公告)日：2016-03-22

申请号：US14367361

申请日：2012-12-20

申请人： JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  MITSUBISHI MATERIALS CORPORATION ,  MITSUBISHI MATERIALS ELECTRONIC CHEMICALS CO., LTD.

发明人： Tatsuya Shimoda ,  Hirokazu Tsukada ,  Takaaki Miyasako

IPC分类号： H01L21/02 ,  H01L29/786 ,  H01L29/49 ,  H01L29/66

CPC分类号： H01L21/02565 ,  H01L21/02183 ,  H01L21/02192 ,  H01L21/02282 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/02614 ,  H01L21/0262 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869

摘要： An object of the present invention is to achieve improvement in performance of a thin film transistor including an oxide as a gate insulating layer, or simplification and energy saving in the processes of producing such a thin film transistor. A thin film transistor (100) of the present invention includes a first oxide layer (possibly containing inevitable impurities) (32) consisting of lanthanum (La) and tantalum (Ta), which has a surface (32a) formed after a precursor layer obtained from a precursor solution as a start material including a precursor containing lanthanum (La) and a precursor containing tantalum (Ta) as solutes is exposed to a hydrochloric acid vapor, between a gate electrode (20) and a channel (52). Moreover, in the thin film transistor, the surface (32a) of the first oxide layer (32) is in contact with the channel (52).

摘要翻译： 本发明的一个目的是在制造这种薄膜晶体管的工艺中，实现包括氧化物作为栅极绝缘层的薄膜晶体管的性能的提高，或简化和节能。 本发明的薄膜晶体管（100）包括由镧（La）和钽（Ta）组成的第一氧化物层（可能含有不可避免的杂质）（32），其具有在获得的前体层之后形成的表面（32a） 从包含含有镧（La）的前体和作为溶质的钽（Ta）的前体的起始材料的前体溶液暴露于栅极电极（20）和通道（52）之间的盐酸蒸汽。 此外，在薄膜晶体管中，第一氧化物层（32）的表面（32a）与沟道（52）接触。

公开(公告)号：US20150001536A1

公开(公告)日：2015-01-01

申请号：US14367361

申请日：2012-12-20

申请人： JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  MITSUBISHI MATERIALS CORPORATION ,  MITSUBISHI MATERIALS ELECTRONIC CHEMICALS CO., LTD

发明人： Tatsuya Shimoda ,  Hirokazu Tsukada ,  Takaaki Miyasako

IPC分类号： H01L21/02 ,  H01L29/786 ,  H01L29/66

CPC分类号： H01L21/02565 ,  H01L21/02183 ,  H01L21/02192 ,  H01L21/02282 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/02614 ,  H01L21/0262 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869

摘要： An object of the present invention is to achieve improvement in performance of a thin film transistor including an oxide as a gate insulating layer, or simplification and energy saving in the processes of producing such a thin film transistor. A thin film transistor (100) of the present invention includes a first oxide layer (possibly containing inevitable impurities) (32) consisting of lanthanum (La) and tantalum (Ta), which has a surface (32a) formed after a precursor layer obtained from a precursor solution as a start material including a precursor containing lanthanum (La) and a precursor containing tantalum (Ta) as solutes is exposed to a hydrochloric acid vapor, between a gate electrode (20) and a channel (52). Moreover, in the thin film transistor, the surface (32a) of the first oxide layer (32) is in contact with the channel (52).

摘要翻译： 本发明的一个目的是在制造这种薄膜晶体管的工艺中，实现包括氧化物作为栅极绝缘层的薄膜晶体管的性能的提高，或简化和节能。 本发明的薄膜晶体管（100）包括由镧（La）和钽（Ta）组成的第一氧化物层（可能含有不可避免的杂质）（32），其具有在获得的前体层之后形成的表面（32a） 从包含含有镧（La）的前体和作为溶质的钽（Ta）的前体的起始材料的前体溶液暴露于栅极电极（20）和通道（52）之间的盐酸蒸汽。 此外，在薄膜晶体管中，第一氧化物层（32）的表面（32a）与沟道（52）接触。

公开(公告)号：US20140339550A1

公开(公告)日：2014-11-20

申请号：US14359262

申请日：2012-10-23

申请人： JAPAN SCIENCE AND TECHNOLOGY AGENCY

发明人： Tatsuya Shimoda ,  Takaaki Miyasako ,  Eisuke Tokumitsu ,  Bui Nguyen Quoc Trinh

IPC分类号： H01L29/51 ,  H01L29/49 ,  H01L29/24 ,  H01L21/02

CPC分类号： H01L29/516 ,  C01G25/00 ,  C01G25/006 ,  C01G29/006 ,  C01G35/00 ,  C01P2002/85 ,  C01P2004/04 ,  H01L21/02192 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/02282 ,  H01L28/55 ,  H01L28/56 ,  H01L28/75 ,  H01L29/24 ,  H01L29/40111 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78391 ,  H01L29/7869 ,  H01L41/0478 ,  H01L41/0805

摘要： Provided is a ferroelectric gate thin film transistor which includes: a channel layer; a gate electrode layer which controls a conductive state of the channel layer; and a gate insulation layer which is arranged between the channel layer and the gate electrode layer and is formed of a ferroelectric layer. The gate insulation layer (ferroelectric layer) has the structure where a PZT layer and a BLT layer (Pb diffusion preventing layer) are laminated to each other. The channel layer (oxide conductor layer) is arranged on a surface of the gate insulation layer (ferroelectric layer) on a BLT layer (Pb diffusion preventing layer) side. The ferroelectric gate thin film transistor can overcome various drawbacks which may be caused due to the diffusion of Pb atoms into an oxide conductor layer from a PZT layer including a drawback that a transmission characteristic of a ferroelectric gate thin film transistor is liable to be deteriorated (for example, a width of a memory window is liable to become narrow).

摘要翻译： 提供一种铁电栅极薄膜晶体管，其包括：沟道层; 栅极电极层，其控制沟道层的导电状态; 以及栅极绝缘层，其布置在沟道层和栅电极层之间并且由铁电层形成。 栅绝缘层（铁电体层）具有将PZT层和BLT层（Pb扩散防止层）层叠的结构。 沟道层（氧化物导体层）配置在BLT层（Pb扩散防止层）侧的栅极绝缘层（铁电体层）的表面。 铁电栅极薄膜晶体管可以克服由于Pb原子从PZT层扩散到氧化物导体层中可能引起的各种缺陷，其包括铁电栅极薄膜晶体管的透射特性容易劣化的缺点（ 例如，存储窗口的宽度容易变窄）。

公开(公告)号：US09536993B2

公开(公告)日：2017-01-03

申请号：US14386811

申请日：2013-03-18

申请人： JAPAN SCIENCE AND TECHNOLOGY AGENCY

发明人： Tatsuya Shimoda ,  Satoshi Inoue ,  Tue Trong Phan ,  Takaaki Miyasako ,  Jinwang Li

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/49

CPC分类号： H01L29/78696 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.

摘要翻译： 根据本发明的薄膜晶体管100包括栅电极20，沟道44和设置在栅电极20和沟道44之间并由氧化物（可能包含不可避免的杂质）的栅极绝缘层34;这适用于下文中的氧化物 ）含有镧和锆。 通道44由包含铟，锌和锆（Zr）的第一氧化物构成，原子比为0.015以上且0.075以下，铟相对于原子比为1，第二氧化物含有铟和锆 相对于原子比为1的铟（In）的原子比为0.055以上且0.16以下的原子比（Zr），或相对于原子比为0.055以上且0.16以下的含有铟和镧的第3氧化物 到In（In）的原子比为1。

公开(公告)号：US09123752B2

公开(公告)日：2015-09-01

申请号：US14531723

申请日：2014-11-03

申请人： Japan Science and Technology Agency

发明人： Tatsuya Shimoda ,  Eisuke Tokumitsu ,  Takaaki Miyasako ,  Toshihiko Kaneda

IPC分类号： H01L29/10 ,  H01L29/66 ,  B41J2/16 ,  C23C18/12 ,  B05D5/06 ,  H01L21/02 ,  H01L21/368 ,  H01L29/786 ,  H01L41/33 ,  H01L41/318 ,  H01L27/12 ,  C23C18/06 ,  H01L21/441 ,  H01L41/09

CPC分类号： H01L29/66969 ,  B05D5/06 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1629 ,  B41J2/1637 ,  B41J2/1639 ,  B41J2/1643 ,  B41J2/1645 ,  C23C18/06 ,  C23C18/1216 ,  C23C18/1254 ,  C23C18/1279 ,  C23C18/1283 ,  C23C18/1295 ,  H01L21/02104 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/38 ,  H01L21/441 ,  H01L27/1225 ,  H01L27/1292 ,  H01L29/786 ,  H01L29/7869 ,  H01L41/0973 ,  H01L41/318 ,  H01L41/33

摘要： A method of producing a functional device according to the present invention includes, in this order: the functional solid material precursor layer formation step of applying a functional liquid material onto a base material to form a precursor layer of a functional solid material; the drying step of heating the precursor layer to a first temperature in a range from 80° C. to 250° C. to preliminarily decrease fluidity of the precursor layer; the imprinting step of imprinting the precursor layer that is heated to a second temperature in a range from 80° C. to 300° C. to form an imprinted structure on the precursor layer; and the functional solid material layer formation step of heat treating the precursor layer at a third temperature higher than the second temperature to transform the precursor layer into a functional solid material layer.

摘要翻译： 本发明的功能元件的制造方法依次包括功能固体材料前体层的形成工序，将功能性液态材料涂布在基材上形成功能性固体材料的前体层; 所述干燥步骤将所述前体层加热至80℃至250℃的第一温度，以预先降低所述前体层的流动性; 将加热到80℃至300℃的第二温度的前体层的压印步骤，在前体层上形成压印结构; 以及在高于第二温度的第三温度下对前体层进行热处理以将前体层转变成功能性固体材料层的功能性固体材料层形成步骤。

公开(公告)号：US20140319660A1

公开(公告)日：2014-10-30

申请号：US14357167

申请日：2012-10-25

申请人： Japan Science and Technology Agency

发明人： Tatsuya Shimoda ,  Eisuke Tokumitsu ,  Masatoshi Onoue ,  Takaaki Miyasako

IPC分类号： H01L21/02

CPC分类号： H01G4/1254 ,  H01G4/1263 ,  H01G4/306 ,  H01L21/02205 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/76817 ,  H01L27/016 ,  H01L28/40 ,  H01L29/84

摘要： A solid-state electronic device according to the present invention includes: an oxide layer (possibly containing inevitable impurities) that is formed by heating, in an atmosphere containing oxygen, a precursor layer obtained from a precursor solution as a start material including both a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) as solutes, the oxide layer consisting of the bismuth (Bi) and the niobium (Nb); wherein the oxide layer is formed by heating at a heating temperature from 520° C. to 650° C.

摘要翻译： 根据本发明的固态电子器件包括：氧化物层（可能含有不可避免的杂质），其通过在包含氧气的气氛中加热由作为起始材料的前体溶液获得的前体层而形成，该起始材料包括前体 含有铋（Bi）和含有铌（Nb）作为溶质的前体，由铋（Bi）和铌（Nb）构成的氧化物层。 其中通过在520℃至650℃的加热温度下加热形成氧化物层。