公开(公告)号：US09876067B2

公开(公告)日：2018-01-23

申请号：US14778578

申请日：2014-03-12

申请人： JAPAN SCIENCE AND TECHNOLOGY AGENCY

发明人： Tatsuya Shimoda ,  Eisuke Tokumitsu ,  Masatoshi Onoue ,  Takaaki Miyasako

IPC分类号： H01L21/02 ,  H01L49/02 ,  H01L29/51

CPC分类号： H01L28/40 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/02269 ,  H01L28/56 ,  H01L28/60 ,  H01L28/87 ,  H01L28/91 ,  H01L29/513

摘要： The invention provides a dielectric layer having high relative permittivity with low leakage current and excellent flatness. A dielectric layer 30a according to the invention is made of multilayer oxide including a first oxide layer 31 made of oxide consisting of bismuth (Bi) and niobium (Nb) or oxide consisting of bismuth (Bi), zinc (Zn), and niobium (Nb) (possibly including inevitable impurities) and a second oxide layer 32 made of oxide of one type (possibly including inevitable impurities) selected from the group of oxide consisting of lanthanum (La) and tantalum (Ta), oxide consisting of lanthanum (La) and zirconium (Zr), and oxide consisting of strontium (Sr) and tantalum (Ta).

公开(公告)号：US09293257B2

公开(公告)日：2016-03-22

申请号：US14357167

申请日：2012-10-25

申请人： Japan Science and Technology Agency

发明人： Tatsuya Shimoda ,  Eisuke Tokumitsu ,  Masatoshi Onoue ,  Takaaki Miyasako

IPC分类号： C01G29/00 ,  C01G33/00 ,  H01G4/30 ,  H01G4/12 ,  B05D5/12 ,  H01L21/02 ,  H01L29/84 ,  H01L49/02 ,  H01L27/01 ,  B81C1/00 ,  B81B7/00 ,  H01L21/768 ,  H01L21/316

CPC分类号： H01G4/1254 ,  H01G4/1263 ,  H01G4/306 ,  H01L21/02205 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/76817 ,  H01L27/016 ,  H01L28/40 ,  H01L29/84

摘要： A solid-state electronic device according to the present invention includes: an oxide layer (possibly containing inevitable impurities) that is formed by heating, in an atmosphere containing oxygen, a precursor layer obtained from a precursor solution as a start material including both a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) as solutes, the oxide layer consisting of the bismuth (Bi) and the niobium (Nb); wherein the oxide layer is formed by heating at a heating temperature from 520° C. to 650° C.

摘要翻译： 根据本发明的固态电子器件包括：氧化物层（可能含有不可避免的杂质），其通过在包含氧气的气氛中加热由作为起始材料的前体溶液获得的前体层而形成，该起始材料包括前体 含有铋（Bi）和含有铌（Nb）作为溶质的前体，由铋（Bi）和铌（Nb）构成的氧化物层。 其中通过在520℃至650℃的加热温度下加热形成氧化物层。

公开(公告)号：US20140319660A1

公开(公告)日：2014-10-30

申请号：US14357167

申请日：2012-10-25

申请人： Japan Science and Technology Agency

发明人： Tatsuya Shimoda ,  Eisuke Tokumitsu ,  Masatoshi Onoue ,  Takaaki Miyasako

IPC分类号： H01L21/02

CPC分类号： H01G4/1254 ,  H01G4/1263 ,  H01G4/306 ,  H01L21/02205 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/76817 ,  H01L27/016 ,  H01L28/40 ,  H01L29/84

摘要： A solid-state electronic device according to the present invention includes: an oxide layer (possibly containing inevitable impurities) that is formed by heating, in an atmosphere containing oxygen, a precursor layer obtained from a precursor solution as a start material including both a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) as solutes, the oxide layer consisting of the bismuth (Bi) and the niobium (Nb); wherein the oxide layer is formed by heating at a heating temperature from 520° C. to 650° C.

摘要翻译： 根据本发明的固态电子器件包括：氧化物层（可能含有不可避免的杂质），其通过在包含氧气的气氛中加热由作为起始材料的前体溶液获得的前体层而形成，该起始材料包括前体 含有铋（Bi）和含有铌（Nb）作为溶质的前体，由铋（Bi）和铌（Nb）构成的氧化物层。 其中通过在520℃至650℃的加热温度下加热形成氧化物层。