发明申请
- 专利标题： SOLID-STATE ELECTRONIC DEVICE
- 专利标题（中）： 固态电子器件
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申请号： US14357167申请日： 2012-10-25
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公开(公告)号： US20140319660A1公开(公告)日： 2014-10-30
- 发明人: Tatsuya Shimoda , Eisuke Tokumitsu , Masatoshi Onoue , Takaaki Miyasako
- 申请人： Japan Science and Technology Agency
- 优先权： JP2011-245915 20111109
- 国际申请： PCT/JP2012/077623 WO 20121025
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A solid-state electronic device according to the present invention includes: an oxide layer (possibly containing inevitable impurities) that is formed by heating, in an atmosphere containing oxygen, a precursor layer obtained from a precursor solution as a start material including both a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) as solutes, the oxide layer consisting of the bismuth (Bi) and the niobium (Nb); wherein the oxide layer is formed by heating at a heating temperature from 520° C. to 650° C.
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