Invention Grant
- Patent Title: Solid-state electronic device including dielectric bismuth niobate film formed from solution
- Patent Title (中): 固体电子器件包括由溶液形成的介电铌酸铌薄膜
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Application No.: US14357167Application Date: 2012-10-25
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Publication No.: US09293257B2Publication Date: 2016-03-22
- Inventor: Tatsuya Shimoda , Eisuke Tokumitsu , Masatoshi Onoue , Takaaki Miyasako
- Applicant: Japan Science and Technology Agency
- Applicant Address: JP Saitama
- Assignee: Japan Science and Technology Agency
- Current Assignee: Japan Science and Technology Agency
- Current Assignee Address: JP Saitama
- Agency: Seed IP Law Group PLLC
- Priority: JP2011-245915 20111109
- International Application: PCT/JP2012/077623 WO 20121025
- International Announcement: WO2013/069470 WO 20130516
- Main IPC: C01G29/00
- IPC: C01G29/00 ; C01G33/00 ; H01G4/30 ; H01G4/12 ; B05D5/12 ; H01L21/02 ; H01L29/84 ; H01L49/02 ; H01L27/01 ; B81C1/00 ; B81B7/00 ; H01L21/768 ; H01L21/316
Abstract:
A solid-state electronic device according to the present invention includes: an oxide layer (possibly containing inevitable impurities) that is formed by heating, in an atmosphere containing oxygen, a precursor layer obtained from a precursor solution as a start material including both a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) as solutes, the oxide layer consisting of the bismuth (Bi) and the niobium (Nb); wherein the oxide layer is formed by heating at a heating temperature from 520° C. to 650° C.
Public/Granted literature
- US20140319660A1 SOLID-STATE ELECTRONIC DEVICE Public/Granted day:2014-10-30
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