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    COMPOSITION FOR PATTERN FORMATION AND PATTERN-FORMING METHOD
    1.
    发明申请
    COMPOSITION FOR PATTERN FORMATION AND PATTERN-FORMING METHOD 审中-公开
    用于图案形成和图案形成方法的组合物

    公开(公告)号：US20150093508A1

    公开(公告)日：2015-04-02

    申请号：US14566841

    申请日：2014-12-11

    申请人： JSR CORPORATION

    发明人： Tomoki NAGAI ,  Shinya Minegishi ,  Takuo Sone ,  Yuji Namie

    IPC分类号： C09D153/00

    CPC分类号： C09D153/00 ,  B82Y40/00 ,  C08F297/02 ,  C08L53/00 ,  G03F7/0002 ,  H01L21/0337

    摘要： A composition for pattern formation includes a block copolymer that includes a block represented by formula (I) and a block represented by formula (II). R1 and R3 each independently represent a hydrogen atom, a methyl group, a fluorine atom or a trifluoromethyl group. R2 represents a monovalent organic group. R4 represents a hydrocarbon group having a valency of (1+b) and having 1 to 5 carbon atoms. R5 represents a monovalent group having a hetero atom. m and n are each independently an integer of 10 to 5,000. a is an integer of 0 to 5. b is an integer of 1 to 3.

    摘要翻译： 用于图案形成的组合物包括嵌段共聚物，其包含由式（I）表示的嵌段和由式（II）表示的嵌段。 R 1和R 3各自独立地表示氢原子，甲基，氟原子或三氟甲基。 R2表示一价有机基团。 R4表示具有（1 + b）化合价且具有1至5个碳原子的烃基。 R5表示具有杂原子的一价基团。 m和n各自独立地为10〜5000的整数。 a为0〜5的整数。b为1〜3的整数。

    RADIATION-SENSITIVE COMPOSITION, PATTERN-FORMING METHOD AND RADIATION-SENSITIVE ACID GENERATING AGENT
    2.
    发明申请
    RADIATION-SENSITIVE COMPOSITION, PATTERN-FORMING METHOD AND RADIATION-SENSITIVE ACID GENERATING AGENT 审中-公开

    公开(公告)号：US20200041902A9

    公开(公告)日：2020-02-06

    申请号：US15988436

    申请日：2018-05-24

    申请人： JSR CORPORATION

    发明人： Tomoki NAGAI ,  Takehiko Naruoka ,  Ken Maruyama ,  Motohiro Shiratani ,  Hisashi Nakagawa

    IPC分类号： G03F7/039 ,  G03F7/004

    摘要： A radiation-sensitive composition includes: a first polymer having a first structural unit that includes an acid-labile group; and a first compound including a metal cation and a first anion that is a conjugate base of an acid. The acid has a pKa of no greater than 0. The acid is preferably sulfonic acid, nitric acid, organic azinic acid, disulfonylimidic acid or a combination thereof. The first compound is preferably represented by formula (1). In the formula (1), M represents a metal cation; A represents the first anion; x is an integer of 1 to 6; R1 represents a σ ligand; and y is an integer of 0 to 5, and a sum: x+y is no greater than 6. The van der Waals volume of the acid is preferably no less than 2.5×10−28 m3. [AxMR1y]  (1)

    COMPOSITION FOR PATTERN FORMATION, PATTERN-FORMING METHOD, AND BLOCK COPOLYMER
    4.
    发明申请
    COMPOSITION FOR PATTERN FORMATION, PATTERN-FORMING METHOD, AND BLOCK COPOLYMER 有权
    图案形成组合物，图案形成方法和嵌段共聚物

    公开(公告)号：US20160293408A1

    公开(公告)日：2016-10-06

    申请号：US15074053

    申请日：2016-03-18

    申请人： JSR Corporation

    发明人： Hiroyuki KOMATSU ,  Takehiko NARUOKA ,  Tomoki NAGAI

    IPC分类号： H01L21/02 ,  H01L21/311 ,  C08F293/00 ,  C09D133/12

    CPC分类号： C08F293/00 ,  C08G18/61 ,  C08G77/38 ,  C09D153/00 ,  C09D183/00 ,  G03F7/0002 ,  G03F7/002 ,  G03F7/165 ,  H01L21/02112 ,  H01L21/0274 ,  H01L21/3065 ,  H01L21/3081

    摘要： A composition for pattern formation capable of forming a directed self-assembling film having a regular array structure with fine pitches accompanied by fewer defects, and in turn capable of forming a pattern having a fine and favorable shape. A composition for pattern formation contains a block copolymer that forms a phase separation structure by directed self-assembly, and a solvent, in which the block copolymer has a first block composed of a first repeating unit that includes a silicon atom, a second block composed of a second repeating unit that does not include a silicon atom, and a first group that bonds to at least one end of the main chain and links to the first block, in which the first group is a monovalent group that forms a compound having C log P of no less than 2.4 provided that a methyl group is bonded thereto. The first group may be a monovalent hydrocarbon group having 3 to 25 carbon atoms, or a monovalent aromatic heterocyclic group having 3 to 25 carbon atoms and one hetero atom that constitutes the ring.

    摘要翻译： 一种用于图案形成的组合物，其能够形成具有规则阵列结构的定向自组装膜，其具有精细的间距，伴随着较少的缺陷，并且进而能够形成具有良好形状的图案。 用于图案形成的组合物包含通过定向自组装形成相分离结构的嵌段共聚物和其中嵌段共聚物具有由包含硅原子的第一重复单元组成的第一嵌段的溶剂，第二嵌段组成 的不包含硅原子的第二重复单元，以及键合到主链的至少一个末端并连接到第一嵌段的第一基团，其中第一基团是形成具有C的化合物的一价基团 对数P不小于2.4，条件是甲基与键结合。 第一基团可以是具有3〜25个碳原子的一价烃基或具有3〜25个碳原子的一价芳族杂环基和构成环的一个杂原子。

    PATTERN-FORMING METHOD AND DIRECTED SELF-ASSEMBLING COMPOSITION
    5.
    发明申请
    PATTERN-FORMING METHOD AND DIRECTED SELF-ASSEMBLING COMPOSITION 审中-公开
    形成图案的方法和指导的自组装组合物

    公开(公告)号：US20150252216A1

    公开(公告)日：2015-09-10

    申请号：US14638844

    申请日：2015-03-04

    申请人： JSR CORPORATION

    发明人： Shinya MINEGISHI ,  Takehiko NARUOKA ,  Tomoki NAGAI

    IPC分类号： C09D153/00

    CPC分类号： C09D153/00 ,  C08F297/026 ,  G03F7/0002 ,  C08L33/14

    摘要： A pattern-forming method includes providing a coating film using a composition that includes: a first polymer which is a block copolymer; and a second polymer having a surface free energy lower than a surface free energy of the first polymer, such that the second polymer is unevenly distributed to be localized into a superficial layer region of the coating film. Phase separation is caused in the coating film along a direction substantially perpendicular to a thickness direction of the coating film such that at least a part of the coating film is converted into a directed self-assembling film which includes a plurality of phases. A part of the plurality of phases of the directed self-assembling film is removed.

    摘要翻译： 图案形成方法包括使用组合物提供涂膜，所述组合物包括：作为嵌段共聚物的第一聚合物; 以及具有比第一聚合物的表面自由能低的表面自由能的第二聚合物，使得第二聚合物不均匀地分布以定位在涂膜的表层层区域中。 在涂膜中沿着与涂膜的厚度方向大致垂直的方向引起相分离，使得至少一部分涂膜转化为包括多相的定向自组装膜。 去除定向自组装膜的多个相的一部分。

    CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD
    9.
    发明申请
    CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD 审中-公开
    化学稳定材料和电阻形成方法

    公开(公告)号：US20170075221A1

    公开(公告)日：2017-03-16

    申请号：US15259200

    申请日：2016-09-08

    申请人： JSR CORPORATION

    发明人： Hisashi NAKAGAWA ,  Takehiko NARUOKA ,  Tomoki NAGAI

    IPC分类号： G03F7/039 ,  G03F7/38 ,  G03F7/32 ,  G03F7/20

    CPC分类号： G03F7/0397 ,  C08F220/24 ,  C08F228/02 ,  C08F2220/382 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/203 ,  G03F7/322 ,  G03F7/38

    摘要： A chemically amplified resist material comprises: a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid; and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The polymer component comprises: a first polymer comprising a first structural unit that comprises a fluorine atom and does not comprise a salt structure; or a second polymer comprising a second structural unit that comprises a fluorine atom and a salt structure. The generative component comprises: a radiation-sensitive acid-and-sensitizer generating agent; any two of the radiation-sensitive acid-and-sensitizer generating agent, a radiation-sensitive sensitizer generating agent and a radiation-sensitive acid generating agent; or the radiation-sensitive acid-and-sensitizer generating agent, the radiation-sensitive sensitizer generating agent and the radiation-sensitive acid generating agent.

    摘要翻译： 化学放大抗蚀剂材料包括：能够通过酸的作用使其可溶于或不溶于显影剂溶液的聚合物组分; 以及能够在曝光时产生辐射敏感敏化剂和酸的生成成分。 聚合物组分包括：包含第一结构单元的第一聚合物，其包含氟原子并且不包含盐结构; 或包含包含氟原子和盐结构的第二结构单元的第二聚合物。 生成组分包括：辐射敏感的酸和敏化剂产生剂; 任何两种辐射敏感性酸敏感剂发生剂，辐射敏感敏化剂产生剂和辐射敏感性酸产生剂; 或辐射敏感性酸敏感剂发生剂，辐射敏感敏化剂发生剂和辐射敏感性酸产生剂。