摘要:
A radiation-sensitive resin composition includes a polymer component that includes one or more types of polymers, and a radiation-sensitive acid generator. At least one type of the polymer of the polymer component includes a first structural unit represented by a following formula (1). R1 represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group. R2 represents a linear alkyl group having 5 to 21 carbon atoms. Z represents a divalent alicyclic hydrocarbon group or an aliphatic heterocyclic group having a ring skeleton which has 4 to 20 atoms. A part or all of hydrogen atoms included in the alicyclic hydrocarbon group and the aliphatic heterocyclic group represented by Z are not substituted or substituted.
摘要:
A pattern-forming method includes applying a radiation-sensitive composition on a substrate to provide a film on the substrate. The film is exposed. The film exposed is developed. The radiation-sensitive composition includes a metal-containing component that is a metal compound having a hydrolyzable group, a hydrolysis product of the metal compound having a hydrolyzable group, a hydrolytic condensation product of the metal compound having a hydrolyzable group, or a combination thereof. A content of a transition metal atom in the metal-containing component with respect to total metal atoms in the metal-containing component is no less than 50 atomic %.
摘要:
A pattern-forming method includes applying a radiation-sensitive composition comprising a complex on a substrate to provide a film on the substrate. The film is exposed. The film exposed is developed. The complex includes: a metal-containing component that is a transition metal compound having a hydrolyzable group, a hydrolysis product of the transition metal compound having a hydrolyzable group, a hydrolytic condensation product of the transition metal compound having a hydrolyzable group, or a combination thereof; and an organic compound represented by formula (1). In the formula (1), R1 represents an organic group having a valency of n, n being an integer of 1 to 4. In a case where n is 1, X represents —COOH. In a case where n is 2 to 4, X represents —OH, —COOH, —NCO, —NHRa, —COORA or —CO—C(RL)2—CO—RA. R1X)n (1)
摘要:
A chemically amplified resist material comprises a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The radiation-sensitive acid-and-sensitizer generating agent or the radiation-sensitive acid generating agent included in the generative component comprises the first compound that is radiation-sensitive and second compound that is radiation-sensitive. The first compound includes a first onium cation and a first anion, and the second compound includes a second onium cation and a second anion that is different from the first anion. Each of an energy released upon reduction of the first onium cation to a radical and an energy released upon reduction of the second onium cation to a radical is less than 5.0 eV.
摘要:
A chemically amplified resist material comprises: a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid; and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The polymer component comprises: a first polymer comprising a first structural unit that comprises a fluorine atom and does not comprise a salt structure; or a second polymer comprising a second structural unit that comprises a fluorine atom and a salt structure. The generative component comprises: a radiation-sensitive acid-and-sensitizer generating agent; any two of the radiation-sensitive acid-and-sensitizer generating agent, a radiation-sensitive sensitizer generating agent and a radiation-sensitive acid generating agent; or the radiation-sensitive acid-and-sensitizer generating agent, the radiation-sensitive sensitizer generating agent and the radiation-sensitive acid generating agent.
摘要:
A radiation-sensitive composition includes an organic acid, particles including a metal oxide as a principal component, and an acid generating agent that is capable of generating an acid upon irradiation with a radioactive ray. A pKa, which is a logarithmic value of a reciprocal of an acid dissociation constant Ka, of the acid generated from the acid generating agent is less than a pKa of the organic acid. The acid generating agent satisfies at least one of conditions (i) and (ii): (i) a van der Waals volume of the acid is no less than 2.1×10−28 m3; and (ii) the acid generating agent includes a plurality of groups that are capable of generating an acid.
摘要:
A pattern-forming method includes applying a radiation-sensitive composition on a substrate to provide a film on the substrate. The film is exposed. The film exposed is developed. The radiation-sensitive composition includes a metal-containing component that is a metal compound having a hydrolyzable group, a hydrolysis product of the metal compound having a hydrolyzable group, a hydrolytic condensation product of the metal compound having a hydrolyzable group, or a combination thereof. A content of a transition metal atom in the metal-containing component with respect to total metal atoms in the metal-containing component is no less than 50 atomic %.
摘要:
A base film-forming composition includes a compound including a group capable of reacting with Si—OH or Si—H, and a solvent. The base film-forming composition is for forming a base film provided between a layer including a silicon atom and a directed self-assembling film in a directed self-assembly lithography process. The receding contact angle of the base film for pure water is no less than 70° and no greater than 90°. The compound is preferably represented by formula (1). In the formula (1), A represents a linking group having a valency of (m+n); D represents a monovalent organic group having at least 10 carbon atoms; E represents the group capable of reacting with Si—OH or Si—H; and m and n are each independently an integer of 1 to 200. (En-AD)m (1)
摘要:
A composition for pattern formation capable of forming a directed self-assembling film having a regular array structure with fine pitches accompanied by fewer defects, and in turn capable of forming a pattern having a fine and favorable shape. A composition for pattern formation contains a block copolymer that forms a phase separation structure by directed self-assembly, and a solvent, in which the block copolymer has a first block composed of a first repeating unit that includes a silicon atom, a second block composed of a second repeating unit that does not include a silicon atom, and a first group that bonds to at least one end of the main chain and links to the first block, in which the first group is a monovalent group that forms a compound having C log P of no less than 2.4 provided that a methyl group is bonded thereto. The first group may be a monovalent hydrocarbon group having 3 to 25 carbon atoms, or a monovalent aromatic heterocyclic group having 3 to 25 carbon atoms and one hetero atom that constitutes the ring.
摘要:
A pattern-forming method includes providing a coating film using a composition that includes: a first polymer which is a block copolymer; and a second polymer having a surface free energy lower than a surface free energy of the first polymer, such that the second polymer is unevenly distributed to be localized into a superficial layer region of the coating film. Phase separation is caused in the coating film along a direction substantially perpendicular to a thickness direction of the coating film such that at least a part of the coating film is converted into a directed self-assembling film which includes a plurality of phases. A part of the plurality of phases of the directed self-assembling film is removed.