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公开(公告)号:US11204552B2
公开(公告)日:2021-12-21
申请号:US15988436
申请日:2018-05-24
申请人: JSR CORPORATION
IPC分类号: G03F7/004 , G03F7/039 , G03F7/30 , G03F7/38 , C07C303/32 , C07C309/06 , C07C309/12 , C07C309/19 , C07C309/24 , C07C381/12 , G03F7/20
摘要: A radiation-sensitive composition includes: a first polymer having a first structural unit that includes an acid-labile group; and a first compound including a metal cation and a first anion that is a conjugate base of an acid. The acid has a pKa of no greater than 0. The acid is preferably sulfonic acid, nitric acid, organic azinic acid, disulfonylimidic acid or a combination thereof. The first compound is preferably represented by formula (1). In the formula (1), M represents a metal cation; A represents the first anion; x is an integer of 1 to 6; R1 represents a σ ligand; and y is an integer of 0 to 5, and a sum: x+y is no greater than 6. The van der Waals volume of the acid is preferably no less than 2.5×10−28 m3. [AxMR1y] (1)
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公开(公告)号:US20180267406A1
公开(公告)日:2018-09-20
申请号:US15988436
申请日:2018-05-24
申请人: JSR CORPORATION
CPC分类号: G03F7/0392 , G03F7/0045 , G03F7/0397 , G03F7/2059
摘要: A radiation-sensitive composition includes: a first polymer having a first structural unit that includes an acid-labile group; and a first compound including a metal cation and a first anion that is a conjugate base of an acid. The acid has a pKa of no greater than 0. The acid is preferably sulfonic acid, nitric acid, organic azinic acid, disulfonylimidic acid or a combination thereof. The first compound is preferably represented by formula (1). In the formula (1), M represents a metal cation; A represents the first anion; x is an integer of 1 to 6; R1 represents a σ ligand; and y is an integer of 0 to 5, and a sum: x+y is no greater than 6. The van der Waals volume of the acid is preferably no less than 2.5×10−28 m3. [AxMR1y] (1)
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公开(公告)号:US10073348B2
公开(公告)日:2018-09-11
申请号:US15241274
申请日:2016-08-19
发明人: Hisashi Nakagawa , Takehiko Naruoka , Tomoki Nagai , Seiichi Tagawa , Akihiro Oshima , Seiji Nagahara
IPC分类号: G03F7/004 , G03F7/20 , H01L21/027 , C07C309/07 , C07C381/12 , C08F220/38 , C07D409/14 , C07C303/32 , C08F220/22 , C08F220/28 , C08F220/26 , C08F220/14 , G03F7/039 , G03F7/32 , G03F7/38
CPC分类号: G03F7/203 , C07C303/32 , C07C309/07 , C07C381/12 , C07D409/14 , C08F220/14 , C08F220/22 , C08F220/26 , C08F220/28 , C08F220/38 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2002 , G03F7/2022 , G03F7/322 , G03F7/38 , H01L21/0274
摘要: A resist-pattern-forming method comprises: patternwise exposing a predetermined region of a resist material film to a first radioactive ray that is ionizing radiation or nonionizing radiation; floodwise exposing the resist material film to a second radioactive ray that is nonionizing radiation; baking the resist material film; and developing the resist material film to form a resist pattern. The resist material film is made from a photosensitive resin composition comprising a chemically amplified resist material. The chemically amplified resist material comprises a base component that is capable of being made soluble or insoluble in a developer solution by an action of an acid and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. A van der Waals volume of the acid generated from the generative component is no less than 3.0×10−28 m3.
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公开(公告)号:US09150962B2
公开(公告)日:2015-10-06
申请号:US14159444
申请日:2014-01-21
申请人: JSR Corporation
发明人: Tatsuya Sakai , Hideki Nishimura , Masahiro Yamamoto , Hisashi Nakagawa , Ryuuichi Saitou , Hideyuki Aoki , Tsuyoshi Furukawa
IPC分类号: C23C16/06 , H01L21/285 , H01L21/3205 , H01L21/768 , C23C16/18
CPC分类号: C23C16/06 , C23C16/18 , H01L21/28556 , H01L21/32051 , H01L21/76843 , H01L21/76877
摘要: Provided is a method for producing a substrate with a metal body. This method provides excellent film-forming properties (reflectance and adhesion), is easy to be used on a large substrate, and can be carried out at a low cost. The method includes the steps of: (A) heating a complex to a first temperature so as to generate a vapor of the complex; and (B) contacting the vapor with a substrate heated to a second temperature that is not higher than the first temperature so as to form a metal body containing a central metal of the complex, either in uncombined form or as a compound thereof (exclusive of the complex), on at least part of a surface of the substrate. The second temperature in step (B) is lower than the decomposition temperature of the complex. The central metal of the complex is aluminum or titanium.
摘要翻译: 提供一种用金属体制造衬底的方法。 该方法提供优异的成膜性(反射率和粘合性),易于在大的基板上使用,并且可以以低成本进行。 该方法包括以下步骤:(A)将络合物加热至第一温度以产生复合物的蒸气; 和(B)使蒸气与加热到不高于第一温度的第二温度的基底接触,以形成含有复合体的中心金属的金属体,或者以未组合的形式或作为其化合物(不包括 该复合物)在基材的表面的至少一部分上。 步骤(B)中的第二温度低于络合物的分解温度。 复合体的中心金属是铝或钛。
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公开(公告)号:US11506976B2
公开(公告)日:2022-11-22
申请号:US16778166
申请日:2020-01-31
申请人: JSR CORPORATION
发明人: Hisashi Nakagawa , Yusuke Asano , Shinya Minegishi
摘要: A radiation-sensitive composition contains: a polymetalloxane including a structural unit represented by formula (1); a radiation-sensitive acid generator; and a solvent. In the following formula (1), M represents a germanium atom, a tin atom or a lead atom; Ar1 represents a substituted or unsubstituted aryl group having 6 to 20 ring atoms or a substituted or unsubstituted heteroaryl group having 5 to 20 ring atoms; R1 represents a monovalent organic group having 1 to 20 carbon atoms, a hydrogen atom, a halogen atom or a hydroxy group; and n is 2 or 3.
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公开(公告)号:US10520815B2
公开(公告)日:2019-12-31
申请号:US15460503
申请日:2017-03-16
申请人: JSR CORPORATION
摘要: A pattern-forming method includes applying a radiation-sensitive composition on a substrate to provide a film on the substrate. The film is exposed. The film exposed is developed. The radiation-sensitive composition includes a metal-containing component that is a metal compound having a hydrolyzable group, a hydrolysis product of the metal compound having a hydrolyzable group, a hydrolytic condensation product of the metal compound having a hydrolyzable group, or a combination thereof. A content of a transition metal atom in the metal-containing component with respect to total metal atoms in the metal-containing component is no less than 50 atomic %.
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公开(公告)号:US10120282B2
公开(公告)日:2018-11-06
申请号:US15259200
申请日:2016-09-08
申请人: JSR CORPORATION
发明人: Hisashi Nakagawa , Takehiko Naruoka , Tomoki Nagai
IPC分类号: G03F7/004 , G03F7/38 , C08F220/24 , G03F7/039 , G03F7/20 , G03F7/32 , C08F220/38 , C08F228/02
摘要: A chemically amplified resist material comprises: a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid; and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The polymer component comprises: a first polymer comprising a first structural unit that comprises a fluorine atom and does not comprise a salt structure; or a second polymer comprising a second structural unit that comprises a fluorine atom and a salt structure. The generative component comprises: a radiation-sensitive acid-and-sensitizer generating agent; any two of the radiation-sensitive acid-and-sensitizer generating agent, a radiation-sensitive sensitizer generating agent and a radiation-sensitive acid generating agent; or the radiation-sensitive acid-and-sensitizer generating agent, the radiation-sensitive sensitizer generating agent and the radiation-sensitive acid generating agent.
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公开(公告)号:US10018911B2
公开(公告)日:2018-07-10
申请号:US15347033
申请日:2016-11-09
申请人: JSR CORPORATION
发明人: Hisashi Nakagawa , Takehiko Naruoka , Tomoki Nagai
IPC分类号: G03F7/004 , G03F7/16 , G03F7/039 , G03F7/20 , C07C381/12 , G03F7/38 , H01L21/027 , C07D307/77 , C08F220/38 , C08F220/18 , C08F220/26 , C08F220/24 , C08F220/22
CPC分类号: G03F7/0046 , C07C381/12 , C07D307/77 , C08F220/18 , C08F220/22 , C08F220/24 , C08F220/26 , C08F220/38 , G03F7/0045 , G03F7/0397 , G03F7/095 , G03F7/168 , G03F7/2022 , G03F7/38 , H01L21/0274
摘要: A chemically amplified resist material comprises a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The radiation-sensitive acid-and-sensitizer generating agent or the radiation-sensitive acid generating agent included in the generative component comprises the first compound that is radiation-sensitive and second compound that is radiation-sensitive. The first compound includes a first onium cation and a first anion, and the second compound includes a second onium cation and a second anion that is different from the first anion. Each of an energy released upon reduction of the first onium cation to a radical and an energy released upon reduction of the second onium cation to a radical is less than 5.0 eV.
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公开(公告)号:US09939729B2
公开(公告)日:2018-04-10
申请号:US15259160
申请日:2016-09-08
申请人: JSR CORPORATION
发明人: Hisashi Nakagawa , Takehiko Naruoka , Tomoki Nagai
IPC分类号: G03F7/20 , G03F7/30 , G03F7/40 , G03F7/038 , G03F7/004 , G03F7/11 , C08F220/28 , C08F220/38 , C08F220/18 , G03F7/16 , G03F7/32
CPC分类号: G03F7/203 , C08F220/18 , C08F220/28 , C08F220/38 , C08F2220/283 , C08F2220/382 , G03F7/0045 , G03F7/0382 , G03F7/11 , G03F7/162 , G03F7/2004 , G03F7/2037 , G03F7/322 , G03F7/325 , C08F2220/185 , C08F2220/1891
摘要: A resist pattern-forming method comprises applying a chemically amplified resist material on a substrate to form a resist film on the substrate. The resist film is patternwise exposed to a radioactive ray having a wavelength of no greater than 250 nm. The resist film patternwise exposed is floodwise exposed to a radioactive ray having a wavelength of greater than 250 nm. The resist film floodwise exposed is baked and developed with a developer solution comprising an organic solvent. The chemically amplified resist material comprises a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The component comprises: a radiation-sensitive sensitizer generating agent, and at least one of a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive acid generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (B).
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公开(公告)号:US20170075224A1
公开(公告)日:2017-03-16
申请号:US15259160
申请日:2016-09-08
申请人: JSR CORPORATION
发明人: Hisashi Nakagawa , Takehiko Naruoka , Tomoki Nagai
IPC分类号: G03F7/20 , G03F7/004 , G03F7/11 , G03F7/32 , C08F220/38 , C08F220/18 , G03F7/16 , G03F7/038 , C08F220/28
CPC分类号: G03F7/203 , C08F220/18 , C08F220/28 , C08F220/38 , C08F2220/283 , C08F2220/382 , G03F7/0045 , G03F7/0382 , G03F7/11 , G03F7/162 , G03F7/2004 , G03F7/2037 , G03F7/322 , G03F7/325 , C08F2220/185 , C08F2220/1891
摘要: A resist pattern-forming method comprises applying a chemically amplified resist material on a substrate to form a resist film on the substrate. The resist film is patternwise exposed to a radioactive ray having a wavelength of no greater than 250 nm. The resist film patternwise exposed is floodwise exposed to a radioactive ray having a wavelength of greater than 250 nm. The resist film floodwise exposed is baked and developed with a developer solution comprising an organic solvent. The chemically amplified resist material comprises a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The component comprises: a radiation-sensitive sensitizer generating agent, and at least one of a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive acid generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (B).
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