公开(公告)号：US10995173B2

公开(公告)日：2021-05-04

申请号：US16385341

申请日：2019-04-16

申请人： JSR CORPORATION

发明人： Yuji Namie ,  Shinya Minegishi ,  Tomoki Nagai ,  Takuo Sone

IPC分类号： C08F297/02 ,  B81C1/00 ,  C08L53/00 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/033 ,  G03F7/00 ,  G03F7/20 ,  H01L21/027

摘要： A directed self-assembling composition for pattern formation includes a block copolymer. The block copolymer includes a polystyrene block having a styrene unit, and a polyalkyl (meth)acrylate block having an alkyl (meth)acrylate unit. The block copolymer has a group that is bound to at least one end of a main chain of the block copolymer and that includes a hetero atom.

公开(公告)号：US09684235B2

公开(公告)日：2017-06-20

申请号：US14272587

申请日：2014-05-08

申请人： JSR CORPORATION

发明人： Yuji Namie ,  Shinya Minegishi ,  Tomoki Nagai ,  Takuo Sone

IPC分类号： C08L53/00 ,  C08F297/00 ,  G03F7/00 ,  H01L21/033 ,  H01L21/308 ,  H01L21/3213 ,  B81C1/00 ,  C08F297/02

CPC分类号： C08F297/026 ,  B81C1/00031 ,  B81C2201/0149 ,  C08L53/005 ,  G03F7/0002 ,  G03F7/0035 ,  G03F7/70 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/32139

摘要： A directed self-assembling composition for pattern formation includes a block copolymer. The block copolymer includes a polystyrene block having a styrene unit, and a polyalkyl (meth)acrylate block having an alkyl (meth)acrylate unit. The block copolymer has a group that is bound to at least one end of a main chain of the block copolymer and that includes a hetero atom.

公开(公告)号：US09607849B2

公开(公告)日：2017-03-28

申请号：US14249432

申请日：2014-04-10

申请人： JSR CORPORATION

发明人： Kazuhiko Koumura ,  Shinya Minegishi ,  Takashi Mori ,  Kyoyu Yasuda ,  Yoshio Takimoto ,  Shinya Nakafuji ,  Toru Kimura

IPC分类号： G03F7/09 ,  G03F7/20 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/02 ,  H01L21/033

CPC分类号： H01L21/3081 ,  G03F7/094 ,  H01L21/02164 ,  H01L21/0271 ,  H01L21/033 ,  H01L21/31116 ,  H01L21/31138

摘要： A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180° C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask.

公开(公告)号：US09557644B2

公开(公告)日：2017-01-31

申请号：US14582703

申请日：2014-12-24

申请人： JSR CORPORATION

发明人： Hiroyuki Komatsu ,  Takehiko Naruoka ,  Shinya Minegishi ,  Kaori Sakai ,  Tomoki Nagai

IPC分类号： H01L21/30 ,  B81C1/00 ,  G03F7/00 ,  G03F7/038 ,  C09D133/06 ,  C09D125/14 ,  G03F7/11

CPC分类号： C09D125/14 ,  C08F220/14 ,  C09D133/06 ,  C09D133/12 ,  G03F7/0002 ,  G03F7/0388 ,  G03F7/11 ,  C08F2220/325 ,  C08F212/08 ,  C08F2220/1841

摘要： A base film-forming composition includes a compound including a group capable of reacting with Si—OH or Si—H, and a solvent. The base film-forming composition is for forming a base film provided between a layer including a silicon atom and a directed self-assembling film in a directed self-assembly lithography process. The receding contact angle of the base film for pure water is no less than 70° and no greater than 90°. The compound is preferably represented by formula (1). In the formula (1), A represents a linking group having a valency of (m+n); D represents a monovalent organic group having at least 10 carbon atoms; E represents the group capable of reacting with Si—OH or Si—H; and m and n are each independently an integer of 1 to 200.

摘要翻译： 基础成膜组合物包括包含能够与Si-OH或Si-H反应的基团的化合物和溶剂。 基底成膜组合物用于在定向自组装光刻工艺中形成设置在包括硅原子的层和定向自组装膜之间的基膜。 纯水基底膜的后退接触角不小于70°，不大于90°。 该化合物优选由式（1）表示。 在式（1）中，A表示具有（m + n）价的连接基团。 D表示具有至少10个碳原子的一价有机基团; E表示能够与Si-OH或Si-H反应的基团; m和n各自独立地为1〜200的整数。

公开(公告)号：US11079676B2

公开(公告)日：2021-08-03

申请号：US16449701

申请日：2019-06-24

申请人： JSR CORPORATION

发明人： Yusuke Asano ,  Hisashi Nakagawa ,  Shinya Minegishi

IPC分类号： G03F7/038 ,  G03F7/20 ,  G03F7/32 ,  G03F7/039 ,  C08G79/12 ,  G03F7/004 ,  C08F12/14

摘要： A radiation-sensitive composition is to be used in exposure with an extreme ultraviolet ray or an electron beam, and includes a first polymer and a solvent, wherein the first polymer includes a first structural unit including: at least one metal atom; and at least one carbon atom that each bonds to the metal atom by a chemical bond and does not constitute an unsaturated bond, and at least one chemical bond is a covalent bond. Every chemical bond is preferably a covalent bond. The metal atom is preferably tin, germanium, lead or a combination thereof.

公开(公告)号：US10308752B2

公开(公告)日：2019-06-04

申请号：US15479705

申请日：2017-04-05

申请人： JSR CORPORATION

发明人： Yuji Namie ,  Shinya Minegishi ,  Tomoki Nagai ,  Takuo Sone

IPC分类号： C08F297/02 ,  H01L21/033 ,  G03F7/00 ,  H01L21/308 ,  H01L21/3213 ,  B81C1/00 ,  C08L53/00 ,  G03F7/20 ,  H01L21/027

摘要： A block copolymer includes a polystyrene block including a styrene unit, and a polyalkyl (meth)acrylate block including an alkyl (meth)acrylate unit. The block copolymer includes an organic group that is bound to at least one end of a main chain of the block copolymer and that comprises a hetero atom. A polymerization initiation end of the block copolymer includes a structure derived from an alkyl lithium. The organic group included in the block copolymer includes a nitrogen atom, a sulfur atom, a phosphorus atom, a tin atom, or a combination thereof, or is represented by formula (1). R1 represents a single bond or a divalent organic group having 1 to 30 carbon atoms; and R2 represents a hydrogen atom, an aliphatic linear hydrocarbon group having 1 to 30 carbon atoms, an alicyclic hydrocarbon group having 3 to 30 carbon atoms, or the like.

公开(公告)号：US09599892B2

公开(公告)日：2017-03-21

申请号：US14668335

申请日：2015-03-25

申请人： JSR CORPORATION

发明人： Hiroyuki Komatsu ,  Takehiko Naruoka ,  Shinya Minegishi ,  Tomoki Nagai

IPC分类号： G03F7/00 ,  G03F7/20 ,  G03F7/38 ,  G03F7/40 ,  G03F7/36 ,  H01L21/027 ,  G03F7/32 ,  C08K5/42 ,  H01L21/311 ,  C08F297/02 ,  C08L53/00

CPC分类号： G03F7/0002 ,  C08F297/026 ,  C08K5/42 ,  C08L53/00 ,  G03F7/0035 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/36 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/31133 ,  H01L21/31138

摘要： A composition for pattern formation includes a block copolymer and a solvent. The block copolymer includes a group including a reactive group on at least one end of a main chain of the block copolymer. A pattern-forming method includes providing a directed self-assembling film directly or indirectly on a substrate using the composition. The directed self-assembling film includes a phase separation structure which includes a plurality of phases. A part of the plurality of phases of the directed self-assembling film is removed.

公开(公告)号：US20150187581A1

公开(公告)日：2015-07-02

申请号：US14582703

申请日：2014-12-24

申请人： JSR CORPORATION

发明人： Hiroyuki Komatsu ,  Takehiko Naruoka ,  Shinya Minegishi ,  Kaori Sakai ,  Tomoki Nagai

IPC分类号： H01L21/033 ,  G03F7/038 ,  H01L21/311

CPC分类号： C09D125/14 ,  C08F220/14 ,  C09D133/06 ,  C09D133/12 ,  G03F7/0002 ,  G03F7/0388 ,  G03F7/11 ,  C08F2220/325 ,  C08F212/08 ,  C08F2220/1841

摘要： A base film-forming composition includes a compound including a group capable of reacting with Si—OH or Si—H, and a solvent. The base film-forming composition is for forming a base film provided between a layer including a silicon atom and a directed self-assembling film in a directed self-assembly lithography process. The receding contact angle of the base film for pure water is no less than 70° and no greater than 90°. The compound is preferably represented by formula (1). In the formula (1), A represents a linking group having a valency of (m+n); D represents a monovalent organic group having at least 10 carbon atoms; E represents the group capable of reacting with Si—OH or Si—H; and m and n are each independently an integer of 1 to 200.

摘要翻译： 基础成膜组合物包括包含能够与Si-OH或Si-H反应的基团的化合物和溶剂。 基底成膜组合物用于在定向自组装光刻工艺中形成设置在包括硅原子的层和定向自组装膜之间的基膜。 纯水基底膜的后退接触角不小于70°，不大于90°。 该化合物优选由式（1）表示。 在式（1）中，A表示具有（m + n）价的连接基团。 D表示具有至少10个碳原子的一价有机基团; E表示能够与Si-OH或Si-H反应的基团; m和n各自独立地为1〜200的整数。

公开(公告)号：US09046775B2

公开(公告)日：2015-06-02

申请号：US14032528

申请日：2013-09-20

申请人： JSR CORPORATION

发明人： Shinya Minegishi ,  Kiyoshi Tanaka ,  Kazunori Kusabiraki

IPC分类号： G03F7/11 ,  G03F7/20 ,  C08F214/18

CPC分类号： G03F7/11 ,  C08F214/18 ,  C08F214/182 ,  C08F214/186 ,  C08F220/26 ,  C08L33/16 ,  C09D133/14 ,  G03F7/0046 ,  G03F7/2041 ,  C08F220/24 ,  C08F228/02 ,  C08F220/38

摘要： A composition for forming a liquid immersion upper layer film includes a polymer component including a polymer having a structural unit represented by a formula (1); and a solvent. R1 represents a carboxy group or a group represented by a formula (2); X represents a single bond, a divalent hydrocarbon group having 1 to 20 carbon atoms or a divalent fluorinated hydrocarbon group having 1 to 20 carbon atoms; R2 represents a hydrocarbon group having 1 to 20 carbon atoms and a valency of (n+1), a fluorinated hydrocarbon group having 1 to 20 carbon atoms and a valency of (n+1), or one of these groups each including between adjacent two carbon atoms thereof —CO—, —COO—, —O—, —NR′—, —CS—, —S—, —SO—, —SO2— or a combination thereof; and R3 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms.

摘要翻译： 用于形成液浸上层膜的组合物包括含有具有由式（1）表示的结构单元的聚合物的聚合物组分; 和溶剂。 R1表示羧基或由式（2）表示的基团。 X表示单键，碳原子数1〜20的二价烃基或碳原子数1〜20的二价氟代烃基。 R 2表示碳原子数1〜20的烃基，（n + 1）的化合价，碳原子数1〜20的氟代烃基，（n + 1）的化合价， -CO - ， - CO-， - O - ， - NR' - ， - S-，-S - ， - SO - ， - SO 2 - 或其组合的两个碳原子; R3表示氢原子或碳原子数1〜20的1价有机基团。

公开(公告)号：US09594303B2

公开(公告)日：2017-03-14

申请号：US14491445

申请日：2014-09-19

申请人： JSR Corporation

发明人： Hitoshi Osaki ,  Hayato Namai ,  Shinya Minegishi

IPC分类号： G03F7/004 ,  G03F7/038 ,  H01L21/027 ,  G03F7/039 ,  G03F7/32 ,  G03F7/20 ,  C08F220/26 ,  C08F220/34 ,  G03F7/11 ,  C08F220/18

CPC分类号： G03F7/038 ,  C08F220/18 ,  C08F220/26 ,  C08F220/34 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  H01L21/0275 ,  C08F220/38

摘要： A resist pattern-forming method includes forming a resist film using a photoresist composition. The resist film is exposed. The exposed resist film is developed. The photoresist composition includes an acid generator and a polymer. The acid generator generates a protonic acid upon application of exposure light. The protonic acid generates a proton. The polymer includes a first structural unit which includes a first group. The first group and the proton form a cationic group. The polymer substantially does not include a structural unit which includes an acid-labile group.

摘要翻译： 抗蚀剂图案形成方法包括使用光致抗蚀剂组合物形成抗蚀剂膜。 抗蚀剂膜被曝光。 显影出抗蚀剂膜。 光致抗蚀剂组合物包括酸发生剂和聚合物。 酸发生剂在施加曝光光时产生质子酸。 质子酸产生质子。 聚合物包括包含第一组的第一结构单元。 第一组和质子形成阳离子基团。 聚合物基本上不包括包含酸不稳定基团的结构单元。