公开(公告)号：US11942516B2

公开(公告)日：2024-03-26

申请号：US17704906

申请日：2022-03-25

申请人： Intel Corporation

发明人： Nicole K. Thomas ,  Ravi Pillarisetty ,  Kanwaljit Singh ,  Hubert C. George ,  David J. Michalak ,  Lester Lampert ,  Zachary R. Yoscovits ,  Roman Caudillo ,  Jeanette M. Roberts ,  James S. Clarke

IPC分类号： H01L29/12 ,  B82Y10/00 ,  G06N10/00 ,  H01L21/02 ,  H01L21/28 ,  H01L21/306 ,  H01L21/311 ,  H01L21/324 ,  H01L23/46 ,  H01L29/10 ,  H01L29/40 ,  H01L29/423 ,  H01L29/43 ,  H01L29/66 ,  H01L29/76 ,  H01L29/778 ,  H01L29/78 ,  H01L29/82

CPC分类号： H01L29/127 ,  B82Y10/00 ,  G06N10/00 ,  H01L21/28158 ,  H01L23/46 ,  H01L29/1033 ,  H01L29/401 ,  H01L29/423 ,  H01L29/42312 ,  H01L29/42364 ,  H01L29/437 ,  H01L29/66439 ,  H01L29/66484 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66977 ,  H01L29/7613 ,  H01L29/7831 ,  H01L29/7845 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/324 ,  H01L29/66431 ,  H01L29/778 ,  H01L29/7782 ,  H01L29/82

摘要： Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; a first gate above the quantum well stack, wherein the first gate includes a first gate metal and a first gate dielectric; and a second gate above the quantum well stack, wherein the second gate includes a second gate metal and a second gate dielectric, and the first gate is at least partially between a portion of the second gate and the quantum well stack.

公开(公告)号：US11699747B2

公开(公告)日：2023-07-11

申请号：US16365018

申请日：2019-03-26

申请人： Intel Corporation

发明人： Hubert C. George ,  Sarah Atanasov ,  Ravi Pillarisetty ,  Lester Lampert ,  James S. Clarke ,  Nicole K. Thomas ,  Roman Caudillo ,  Kanwaljit Singh ,  David J. Michalak ,  Jeanette M. Roberts ,  Stephanie A. Bojarski

IPC分类号： H01L29/423 ,  G06N10/00 ,  H01L29/66 ,  H01L29/78 ,  H01L29/40 ,  H01L29/76 ,  B82Y10/00 ,  H01L29/775

CPC分类号： H01L29/775 ,  B82Y10/00 ,  G06N10/00 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/66439 ,  H01L29/66977 ,  H01L29/7613 ,  H01L29/7831

摘要： Disclosed herein are quantum dot devices with multiple layers of gate metal, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; an insulating material above the quantum well stack, wherein the insulating material includes a trench; and a gate on the insulating material and extending into the trench, wherein the gate includes a first gate metal in the trench and a second gate metal above the first gate metal.

公开(公告)号：US11444188B2

公开(公告)日：2022-09-13

申请号：US16648402

申请日：2017-12-21

申请人： Intel Corporation

发明人： Ravi Pillarisetty ,  Nicole K. Thomas ,  Hubert C. George ,  Jeanette M. Roberts ,  Payam Amin ,  Zachary R. Yoscovits ,  Roman Caudillo ,  James S. Clarke

IPC分类号： H01L29/778 ,  H01L29/12 ,  H01L21/321 ,  H01L21/8234 ,  H01L29/165 ,  H01L29/66 ,  H01L29/76 ,  H01L29/82 ,  B82Y10/00 ,  B82Y40/00

摘要： Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a base; a fin extending away from the base, wherein the fin includes a quantum well layer; an insulating material at least partially above the fin, wherein the insulating material includes a trench above the fin; and a gate metal on the insulating material and extending into the trench.

公开(公告)号：US20210036110A1

公开(公告)日：2021-02-04

申请号：US16648442

申请日：2017-12-17

申请人： Intel Corporation

发明人： Nicole K. Thomas ,  James S. Clarke ,  Jessica M. Torres ,  Ravi Pillarisetty ,  Kanwaljit Singh ,  Payam Amin ,  Hubert C. George ,  Jeanette M. Roberts ,  Roman Caudillo ,  David J. Michalak ,  Zachary R. Yoscovits ,  Lester Lampert

IPC分类号： H01L29/12 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/82

摘要： Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer, wherein the quantum well layer includes an isotopically purified material; a gate dielectric above the quantum well stack; and a gate metal above the gate dielectric, wherein the gate dielectric is between the quantum well layer and the gate metal.

公开(公告)号：US10910488B2

公开(公告)日：2021-02-02

申请号：US16019334

申请日：2018-06-26

申请人： Intel Corporation

发明人： Hubert C. George ,  Lester Lampert ,  James S. Clarke ,  Ravi Pillarisetty ,  Zachary R. Yoscovits ,  Nicole K. Thomas ,  Roman Caudillo ,  Kanwaljit Singh ,  David J. Michalak ,  Jeanette M. Roberts

IPC分类号： H01L29/775 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L27/088 ,  H01L29/12 ,  H01L29/40 ,  H01L29/76 ,  H01L29/06 ,  B82Y10/00 ,  H01L29/778 ,  H01L29/82

摘要： Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a base; a fin extending away from the base, wherein the fin has a first side face and a second side face, and the fin includes a quantum well layer; and a gate above the fin, wherein the gate extends down along the first side face.

公开(公告)号：US10763347B2

公开(公告)日：2020-09-01

申请号：US16349955

申请日：2016-12-14

申请人： Intel Corporation

发明人： Payam Amin ,  Nicole K. Thomas ,  James S. Clarke ,  Jessica M. Torres ,  Ravi Pillarisetty ,  Hubert C. George ,  Kanwaljit Singh ,  Van H. Le ,  Jeanette M. Roberts ,  Roman Caudillo ,  Zachary R. Yoscovits ,  David J. Michalak

IPC分类号： H01L29/775 ,  G06N10/00 ,  H01L21/02 ,  H01L29/12 ,  H01L29/165 ,  H01L29/66 ,  H01L29/06 ,  H01L29/76 ,  H01L29/423 ,  H01L29/40 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/778 ,  H01L29/82

摘要： Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum processing device may include: a quantum well stack having alternatingly arranged relaxed and strained layers; and a plurality of gates disposed above the quantum well stack to control quantum dot formation in the quantum well stack.

公开(公告)号：US20200258984A1

公开(公告)日：2020-08-13

申请号：US16274572

申请日：2019-02-13

申请人： Intel Corporation

发明人： Hubert C. George ,  Ravi Pillarisetty ,  Lester Lampert ,  James S. Clarke ,  Nicole K. Thomas ,  Stephanie A. Bojarski ,  Roman Caudillo ,  David J. Michalak ,  Jeanette M. Roberts ,  Thomas Francis Watson

IPC分类号： H01L29/12 ,  H01L29/16 ,  H01L29/78 ,  G06N10/00

摘要： Disclosed herein are quantum dot devices with conductive liners, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include a base, a first fin extending from the base, a second fin extending from the base, a conductive material between the first fin and the second fin, and a dielectric material between the conductive material and the first fin.

公开(公告)号：US20200212210A1

公开(公告)日：2020-07-02

申请号：US16648402

申请日：2017-12-21

申请人： Intel Corporation

发明人： Ravi Pillarisetty ,  Nicole K. Thomas ,  Hubert C. George ,  Jeanette M. Roberts ,  Payam Amin ,  Zachary R. Yoscovits ,  Roman Caudillo ,  James S. Clarke

IPC分类号： H01L29/778 ,  H01L29/76 ,  H01L29/82 ,  H01L29/12 ,  H01L29/165 ,  H01L29/66 ,  H01L21/321 ,  H01L21/8234

摘要： Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a base; a fin extending away from the base, wherein the fin includes a quantum well layer; an insulating material at least partially above the fin, wherein the insulating material includes a trench above the fin; and a gate metal on the insulating material and extending into the trench.

公开(公告)号：US20190252536A1

公开(公告)日：2019-08-15

申请号：US16143676

申请日：2018-09-27

申请人： Intel Corporation

发明人： Hubert C. George ,  Ravi Pillarisetty ,  Lester Lampert ,  James S. Clarke ,  Nicole K. Thomas ,  Roman Caudillo ,  Kanwaljit Singh ,  David J. Michalak ,  Jeanette M. Roberts

IPC分类号： H01L29/778 ,  H01L29/51 ,  H01L29/49 ,  H01L27/02 ,  H01L29/15

CPC分类号： H01L29/7782 ,  G06N10/00 ,  H01L23/5383 ,  H01L27/0255 ,  H01L29/15 ,  H01L29/4966 ,  H01L29/517

摘要： A quantum dot device is disclosed that includes a fin and a gate above the fin. The fin may extend away from a base and include a quantum well stack in which one or more quantum dots may be formed during operation of the quantum dot device. The gate may include a gate electrode material having a first portion and a second portion, where the first portion is above the quantum well stack and the second portion is a portion that is not above the quantum well stack and is separated from the base by an insulating material. The quantum dot device may further include a metal structure between the second portion of the gate electrode material and the base, forming a portion of a diode provided in series with the gate, which diode may provide at least some ESD protection for the quantum dot device.

公开(公告)号：US10361353B2

公开(公告)日：2019-07-23

申请号：US15891518

申请日：2018-02-08

申请人： Intel Corporation

发明人： Hubert C. George ,  Zachary R. Yoscovits ,  Nicole K. Thomas ,  Lester Lampert ,  James S. Clarke ,  Jeanette M. Roberts ,  Ravi Pillarisetty ,  David J. Michalak ,  Kanwaljit Singh ,  Roman Caudillo

IPC分类号： H01L29/06 ,  H01L39/14 ,  H01L39/22 ,  H01L29/12 ,  H01L29/15 ,  H01L29/423 ,  H01L29/40 ,  H01L39/24 ,  G06N10/00 ,  H01L25/16 ,  H01L23/00 ,  H01L23/498

摘要： Disclosed herein are fabrication techniques for providing metal gates in quantum devices, as well as related quantum devices. For example, in some embodiments, a method of manufacturing a quantum device may include providing a gate dielectric over a qubit device layer, providing over the gate dielectric a pattern of non-metallic elements referred to as “gate support elements,” and depositing a gate metal on sidewalls of the gate support elements to form a plurality of gates of the quantum device.