公开(公告)号：US20190165151A1

公开(公告)日：2019-05-30

申请号：US16202567

申请日：2018-11-28

Applicant: Infineon Technologies AG

Inventor： Oana Julia Spulber ,  Matthias Kuenle ,  Wolfgang Roesner ,  Christian Philipp Sandow ,  Christoph Weiss

IPC: H01L29/739 ,  H01L29/66 ,  H01L29/10 ,  H01L29/06 ,  H01L21/265

Abstract: An embodiment relates to a method of manufacturing an insulated gate bipolar transistor in a semiconductor body. A first field stop zone portion of a first conductivity type is formed on a semiconductor substrate. A second field stop zone portion of the first conductivity type is formed on the first field stop zone portion. A drift zone of the first conductivity type is formed on the second field stop zone portion. A doping concentration in the drift zone is smaller than 1013 cm−3 along a vertical extension of more than 30% of a thickness of the semiconductor body upon completion of the insulated gate bipolar transistor.

公开(公告)号：US20160056251A1

公开(公告)日：2016-02-25

申请号：US14814758

申请日：2015-07-31

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Anton Mauder ,  Matteo Dainese ,  Franz Hirler ,  Christian Jaeger ,  Maximillian Roesch ,  Wolfgang Roesner ,  Martin Stiftinger ,  Robert Strenz

IPC: H01L29/423 ,  H01L29/792 ,  H01L27/02 ,  H01L27/115 ,  H01L27/06

CPC classification number: H01L29/42344 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/0207 ,  H01L27/0623 ,  H01L27/11521 ,  H01L27/11556 ,  H01L27/11568 ,  H01L27/11573 ,  H01L27/11582 ,  H01L29/0619 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/42376 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/7883 ,  H01L29/792

Abstract: A semiconductor switching device includes a first load terminal electrically connected to source zones of transistor cells. The source zones form first pn junctions with body zones. A second load terminal is electrically connected to a drain construction that forms second pn junctions with the body zones. Control structures, which include a control electrode and charge storage structures, directly adjoin the body zones. The control electrode controls a load current through the body zones. The charge storage structures insulate the control electrode from the body zones and contain a control charge adapted to induce inversion channels in the body zones in the absence of a potential difference between the control electrode and the first load electrode.

Abstract translation: 半导体开关器件包括电连接到晶体管单元的源极区的第一负载端子。 源区与身体区形成第一个pn结。 第二负载端子电连接到与主体区域形成第二pn结的排水构造。 包括控制电极和电荷存储结构的控制结构直接与身体区相邻。 控制电极控制穿过身体区域的负载电流。 电荷存储结构将控制电极与体区绝缘，并且在控制电极和第一负载电极之间没有电位差的情况下，包含适于在体区中诱导反转通道的控制电荷。

公开(公告)号：US09543398B2

公开(公告)日：2017-01-10

申请号：US14814758

申请日：2015-07-31

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Anton Mauder ,  Matteo Dainese ,  Franz Hirler ,  Christian Jaeger ,  Maximilian Roesch ,  Wolfgang Roesner ,  Martin Stiftinger ,  Robert Strenz

IPC: H01L29/423 ,  H01L27/02 ,  H01L27/06 ,  H01L27/115 ,  H01L29/792 ,  H01L21/28 ,  H01L29/788

CPC classification number: H01L29/42344 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/0207 ,  H01L27/0623 ,  H01L27/11521 ,  H01L27/11556 ,  H01L27/11568 ,  H01L27/11573 ,  H01L27/11582 ,  H01L29/0619 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/42376 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/7883 ,  H01L29/792

Abstract: A semiconductor switching device includes a first load terminal electrically connected to source zones of transistor cells. The source zones form first pn junctions with body zones. A second load terminal is electrically connected to a drain construction that forms second pn junctions with the body zones. Control structures, which include a control electrode and charge storage structures, directly adjoin the body zones. The control electrode controls a load current through the body zones. The charge storage structures insulate the control electrode from the body zones and contain a control charge adapted to induce inversion channels in the body zones in the absence of a potential difference between the control electrode and the first load electrode.

Abstract translation: 半导体开关器件包括电连接到晶体管单元的源极区的第一负载端子。 源区与身体区形成第一个pn结。 第二负载端子电连接到与主体区域形成第二pn结的排水构造。 包括控制电极和电荷存储结构的控制结构直接与身体区相邻。 控制电极控制穿过身体区域的负载电流。 电荷存储结构将控制电极与体区绝缘，并且在控制电极和第一负载电极之间没有电位差的情况下，包含适于在体区中诱导反转通道的控制电荷。

公开(公告)号：US20150318347A1

公开(公告)日：2015-11-05

申请号：US14268033

申请日：2014-05-02

Applicant: Infineon Technologies AG

Inventor： Elmar Falck ,  Wolfgang Roesner ,  Hans Peter Felsl ,  Andre Stegner

IPC: H01L29/06 ,  H01L21/761 ,  H01L29/74 ,  H01L29/739 ,  H01L29/78 ,  H01L29/778

CPC classification number: H01L29/0623 ,  H01L21/761 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/24 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/66348 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/74 ,  H01L29/778 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/8611

Abstract: A semiconductor device has a semiconductor body with bottom and top sides and a lateral surface. An active semiconductor region is formed in the semiconductor body and an edge region surrounds the active semiconductor region. A first semiconductor zone of a first conduction type is formed in the edge region. An edge termination structure having at least N field limiting structures is formed in the edge region. Each of the field limiting structures has a field ring and a separation trench formed in the semiconductor body, where N is at least 1. Each of the field rings has a second conduction type, forms a pn-junction with the first semiconductor zone and surrounds the active semiconductor region. For each of the field limiting structures, the separation trench of that field limiting structure is arranged between the field ring of that field limiting structure and the active semiconductor region.

Abstract translation: 半导体器件具有底部和顶侧以及侧面的半导体本体。 在半导体本体中形成有源半导体区域，并且边缘区域围绕有源半导体区域。 第一导电类型的第一半导体区形成在边缘区域中。 在边缘区域中形成具有至少N个场限制结构的边缘终止结构。 每个场限制结构具有形成在半导体本体中的场环和分离沟槽，其中N至少为1.每个场环具有第二导电类型，与第一半导体区形成pn结并且围绕 有源半导体区域。 对于每个场限制结构，该场限制结构的分离沟槽被布置在该场限制结构的场环和有源半导体区之间。

公开(公告)号：US11004963B2

公开(公告)日：2021-05-11

申请号：US16202567

申请日：2018-11-28

Applicant: Infineon Technologies AG

Inventor： Oana Julia Spulber ,  Matthias Kuenle ,  Wolfgang Roesner ,  Christian Philipp Sandow ,  Christoph Weiss

IPC: H01L29/739 ,  H01L29/66 ,  H01L21/265 ,  H01L29/06 ,  H01L29/10 ,  H01L29/32 ,  H01L29/36 ,  H01L29/40 ,  H01L29/08

Abstract: An embodiment relates to a method of manufacturing an insulated gate bipolar transistor in a semiconductor body. A first field stop zone portion of a first conductivity type is formed on a semiconductor substrate. A second field stop zone portion of the first conductivity type is formed on the first field stop zone portion. A drift zone of the first conductivity type is formed on the second field stop zone portion. A doping concentration in the drift zone is smaller than 1013 cm−3 along a vertical extension of more than 30% of a thickness of the semiconductor body upon completion of the insulated gate bipolar transistor.