知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

17 条记录 (耗时 0.023 秒)

    BIOMOLECULE MAGNETIC SENSOR
    3.
    发明申请
    BIOMOLECULE MAGNETIC SENSOR 审中-公开

    公开(公告)号：US20180067175A1

    公开(公告)日：2018-03-08

    申请号：US15394836

    申请日：2016-12-30

    申请人： Industrial Technology Research Institute

    发明人： Hsin-Han Lee ,  Yu-Sheng Chen ,  Ding-Yeong Wang ,  Yu-Chen Hsin

    IPC分类号： G01R33/12

    摘要： A biomolecule magnetic sensor configured to sense magnetic beads attached with biomolecules includes an adsorption pad, a magnetic field line generator and at least one magnetic sensor. The adsorption pad is configured to adsorb the magnetic beads. The magnetic field line generator is configured to generate a plurality of first magnetic field lines, and at least one of the first magnetic field lines passes through the magnetic beads along a first direction to induce a plurality of second magnetic field lines, wherein the magnetic field line generator is disposed between the adsorption pad and the magnetic sensor in the first direction. The magnetic sensor is configured to sense a magnetic field component of at least one of the second magnetic field lines in a second direction. A second shift is provided between the magnetic sensor and the adsorption pad in the second direction.

    Memory cell of resistive random access memory and manufacturing method thereof
    6.
    发明授权
    Memory cell of resistive random access memory and manufacturing method thereof 有权
    电阻随机存取存储器的存储单元及其制造方法

    公开(公告)号：US09385314B2

    公开(公告)日：2016-07-05

    申请号：US14510135

    申请日：2014-10-09

    申请人： Industrial Technology Research Institute

    发明人： Heng-Yuan Lee ,  Pei-Yi Gu ,  Yu-Sheng Chen

    IPC分类号： H01L45/00 ,  H01L27/24

    CPC分类号： H01L45/1233 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1641

    摘要： A memory cell of a resistive random access memory and a manufacturing method thereof are provided. The method includes the following steps. A first electrode is formed. A metal oxide layer is formed on the first electrode. An electrode buffer stacked layer is formed on the metal oxide layer and includes a first buffer layer and a second buffer layer, and the first buffer layer is located between the second buffer layer and the metal oxide layer. The second buffer layer reacts with oxygen from the first buffer layer more strongly than the first buffer layer reacts with oxygen from the metal oxide layer. A second electrode layer is formed on the electrode buffer stacked layer.

    摘要翻译： 提供了一种电阻随机存取存储器的存储单元及其制造方法。 该方法包括以下步骤。 形成第一电极。 在第一电极上形成金属氧化物层。 电极缓冲层叠层形成在金属氧化物层上，具有第一缓冲层和第二缓冲层，第一缓冲层位于第二缓冲层和金属氧化物层之间。 第二缓冲层与第一缓冲层的氧比第一缓冲层与来自金属氧化物层的氧反应更加强烈。 在电极缓冲层叠层上形成第二电极层。

    MEMORY CELL OF RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
    7.
    发明申请
    MEMORY CELL OF RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF 审中-公开
    电容随机存取存储器的存储单元及其制造方法

    公开(公告)号：US20130105758A1

    公开(公告)日：2013-05-02

    申请号：US13719245

    申请日：2012-12-19

    申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

    发明人： Heng-Yuan Lee ,  Pei-Yi Gu ,  Yu-Sheng Chen

    IPC分类号： H01L45/00

    CPC分类号： H01L45/145 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1641

    摘要： A memory cell of a resistive random access memory and a manufacturing method thereof are provided. The method includes the following steps. A first electrode is formed. A metal oxide layer is formed on the first electrode. An electrode buffer stacked layer is formed on the metal oxide layer and includes a first buffer layer and a second buffer layer, and the first buffer layer is located between the second buffer layer and the metal oxide layer. An oxidation reaction between the second buffer layer and the metal oxide layer is relatively easier than an oxidation reaction between the first buffer layer and the metal oxide layer. A second electrode layer is formed on the electrode buffer stacked layer.

    摘要翻译： 提供了一种电阻随机存取存储器的存储单元及其制造方法。 该方法包括以下步骤。 形成第一电极。 在第一电极上形成金属氧化物层。 电极缓冲层叠层形成在金属氧化物层上，具有第一缓冲层和第二缓冲层，第一缓冲层位于第二缓冲层和金属氧化物层之间。 第二缓冲层和金属氧化物层之间的氧化反应比第一缓冲层和金属氧化物层之间的氧化反应相对容易。 在电极缓冲层叠层上形成第二电极层。

    Biomolecule magnetic sensor
    8.
    发明授权
    Biomolecule magnetic sensor 有权

    公开(公告)号：US10725126B2

    公开(公告)日：2020-07-28

    申请号：US15394836

    申请日：2016-12-30

    申请人： Industrial Technology Research Institute

    发明人： Hsin-Han Lee ,  Yu-Sheng Chen ,  Ding-Yeong Wang ,  Yu-Chen Hsin

    IPC分类号： G01R33/12 ,  B03C1/00 ,  H01F1/00

    摘要： A biomolecule magnetic sensor configured to sense magnetic beads attached with biomolecules includes an adsorption pad, a magnetic field line generator and at least one magnetic sensor. The adsorption pad is configured to adsorb the magnetic beads. The magnetic field line generator is configured to generate a plurality of first magnetic field lines, and at least one of the first magnetic field lines passes through the magnetic beads along a first direction to induce a plurality of second magnetic field lines, wherein the magnetic field line generator is disposed between the adsorption pad and the magnetic sensor in the first direction. The magnetic sensor is configured to sense a magnetic field component of at least one of the second magnetic field lines in a second direction. A second shift is provided between the magnetic sensor and the adsorption pad in the second direction.

    Perpendicularly magnetized spin-orbit magnetic device
    9.
    发明授权
    Perpendicularly magnetized spin-orbit magnetic device 有权

    公开(公告)号：US10553788B2

    公开(公告)日：2020-02-04

    申请号：US16219980

    申请日：2018-12-14

    申请人： Industrial Technology Research Institute

    发明人： Hsin-Han Lee ,  Shan-Yi Yang ,  Yu-Sheng Chen ,  Yao-Jen Chang

    IPC分类号： H01L43/08 ,  G11C11/18 ,  G11C11/16 ,  H01L43/02 ,  H01L43/10

    摘要： A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The first stray field applying layer provides a stray magnetic field parallel to a film plane. The first antiferromagnetic layer contacts the first stray field applying layer to define the direction of the magnetic moment in the first stray field applying layer.

    Perpendicularly magnetized spin-orbit magnetic device
    10.
    发明授权
    Perpendicularly magnetized spin-orbit magnetic device 有权

    公开(公告)号：US10193059B2

    公开(公告)日：2019-01-29

    申请号：US15358157

    申请日：2016-11-22

    申请人： Industrial Technology Research Institute

    发明人： Hsin-Han Lee ,  Shan-Yi Yang ,  Yu-Sheng Chen ,  Yao-Jen Chang

    IPC分类号： H01L43/08 ,  G11C11/16 ,  H01L43/02 ,  H01L43/10 ,  G11C11/18

    摘要： A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The first stray field applying layer provides a stray magnetic field parallel to a film plane. The first antiferromagnetic layer contacts the first stray field applying layer to define the direction of the magnetic moment in the first stray field applying layer.