- 专利标题: PERPENDICULARLY MAGNETIZED SPIN-ORBIT MAGNETIC DEVICE
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申请号: US16219980申请日: 2018-12-14
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公开(公告)号: US20190123265A1公开(公告)日: 2019-04-25
- 发明人: Hsin-Han Lee , Shan-Yi Yang , Yu-Sheng Chen , Yao-Jen Chang
- 申请人: Industrial Technology Research Institute
- 申请人地址: TW Hsinchu
- 专利权人: Industrial Technology Research Institute
- 当前专利权人: Industrial Technology Research Institute
- 当前专利权人地址: TW Hsinchu
- 优先权: TW105124742 20160804
- 主分类号: H01L43/08
- IPC分类号: H01L43/08 ; G11C11/16 ; H01L43/02 ; H01L43/10 ; G11C11/18
摘要:
A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The first stray field applying layer provides a stray magnetic field parallel to a film plane. The first antiferromagnetic layer contacts the first stray field applying layer to define the direction of the magnetic moment in the first stray field applying layer.
公开/授权文献
- US10553788B2 Perpendicularly magnetized spin-orbit magnetic device 公开/授权日:2020-02-04
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