公开(公告)号：US20130284593A1

公开(公告)日：2013-10-31

申请号：US13926352

申请日：2013-06-25

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyasu SHICHI ,  Satoshi TOMIMATSU ,  Kaoru UMEMURA ,  Noriyuki KANEOKA ,  Koji ISHIGURO

IPC: C23C14/34

CPC classification number: C23C14/3442 ,  H01J27/10 ,  H01J37/08 ,  H01J37/28 ,  H01J37/3023 ,  H01J37/3056 ,  H01J2237/006 ,  H01J2237/057 ,  H01J2237/0807 ,  H01J2237/0825 ,  H01J2237/0827 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder, a gas tube, a gas volume control valve, and a stop valve.

Abstract translation: 一种与电子部件的横截面观察技术有关的离子束加工和观察方法，通过使用离子束加工样品的电子部件和能够减少填充加工孔的时间的带电粒子束处理器 在填充区域具有高度的平整度。 观察装置能够切换用于用于观察样品的气体离子束的种类来加工样品的气体离子束的种类。 为了实现用于样品加工的气体离子束的种类和用于样品观察的气体离子束的种类之间的切换，使用至少两个气体引入系统，每个系统具有气瓶，气体管， 气体量控制阀和截止阀。

公开(公告)号：US20200292466A1

公开(公告)日：2020-09-17

申请号：US16084155

申请日：2016-03-16

Applicant: Hitachi High-Technologies Corporation

Inventor： Masaki HASEGAWA ,  Katsunori ONUKI ,  Noriyuki KANEOKA ,  Hisaya MURAKOSHI ,  Tomohiko OGATA

IPC: G01N21/94 ,  G01N23/2251 ,  H01J37/28

Abstract: The purpose of the present invention is to provide a defect inspection device that can evaluate a defect having a long latent flaw with high precision. A defect inspection device of the present invention is characterized by being provided with: a sample support member that supports a sample irradiated by an electron beam emitted from an electron source; an imaging element at which an image of electrons (mirror electrons) reflected without reaching the sample is formed via a retarding electric field formed on the sample; an ultraviolet light source that emits an ultraviolet light toward the sample; a movement stage that moves the sample support member; and a control device that controls the movement stage. The defect inspection device is further characterized in that the control device controls the movement stage such that a portion of a linear part included in an image of the sample (or a location on an extensional line of the linear part) is positioned at a specific location in an irradiated region of the electron beam, and repeats the control of the movement stage until an end of the linear part is positioned within the irradiated region of the electron beam.

公开(公告)号：US20200279714A1

公开(公告)日：2020-09-03

申请号：US16645649

申请日：2017-09-20

Applicant: Hitachi High-Technologies Corporation

Inventor： Tomohiko OGATA ,  Masaki HASEGAWA ,  Katsunori ONUKI ,  Noriyuki KANEOKA ,  Hisaya MURAKOSHI

IPC: H01J37/22 ,  H01J37/244

Abstract: In order to optimize defect contrast in a charged particle beam device that inverts charged particles directly above a sample and observes the electrons, this charged particle beam device is provided with a charged particle source, an electron gun control device which applies a first voltage to the charged particle source, a substrate voltage control device which applies a second voltage to a sample, an image forming optical system which includes an imaging lens for imaging charged particles incident from the direction of the sample, a detector which includes a camera for detecting the charged particles, and an image processing device which processes the detected signal, wherein the imaging optical system is configured so as not to image secondary electrons emitted from the sample, but forms an image with mirror electrons bounced back by the electric field formed on the sample by means of the potential difference between the first and the second voltages. The image processing device generates a control signal for controlling the potential difference on the basis of the acquired signal, and optimizes defect contrast by controlling the reflection surface of the mirror electrons.

公开(公告)号：US20200152415A1

公开(公告)日：2020-05-14

申请号：US16660152

申请日：2019-10-22

Applicant: Hitachi High-Technologies Corporation

Inventor： Tomohiko OGATA ,  Hisaya MURAKOSHI ,  Masaki HASEGAWA ,  Noriyuki KANEOKA ,  Katsunori ONUKI

IPC: H01J37/22 ,  H01J37/20 ,  H01J37/10

Abstract: In an electron beam device provided with two columns including an irradiation optical system and an imaging optical system, a photoelectron image for use in adjusting the irradiation optical system is made sharper. The electron beam device includes: an irradiation optical system which irradiates a sample placed on a stage with an electron beam; a light irradiation unit 50 which irradiates the sample with light containing ultraviolet rays; a sample voltage control unit 44 which applies a negative voltage to the sample so that, before the electron beam reaches the sample, the electron orbit inverts; and an imaging optical system which acquires a mirror electron image by forming an image of mirror electrons reflected by application of the negative voltage. In the electron beam device, the imaging optical system includes a sensor 32 which obtains a mirror electron image and a stray light suppression part 27 which is provided between the sensor and the stage 31 and which suppresses reaching the sensor of the light emitted from the light irradiation unit.

公开(公告)号：US20190079025A1

公开(公告)日：2019-03-14

申请号：US16084395

申请日：2016-03-16

Applicant: Hitachi High-Technologies Corporation

Inventor： Masaki HASEGAWA ,  Katsunori ONUKI ,  Noriyuki KANEOKA ,  Hisaya MURAKOSHI ,  Tomohiko OGATA

IPC: G01N21/95 ,  G01N23/203 ,  H01J37/29 ,  G01N21/88

Abstract: The purpose of the present invention is to provide a defect inspection device with which it is possible to detect a latent flaw with a high precision or at a high speed. In order to fulfill this purpose, this defect inspection device is provided with: a sample support member that supports a sample irradiated by an electron beam emitted from an electron source; a negative voltage applying power source for forming a retarding electric field in relation to the electron beam that irradiates the sample supported by the sample support member; an imaging element at which an image of electrons reflected without reaching the sample is formed via the retarding electric field; an ultraviolet light source that emits an ultraviolet light toward the sample; and a computation processing device that processes an image generated on the basis of a signal obtained by the imaging element. The computation processing device determines the type of defect in the sample on the basis of a plurality of image signals obtained when the ultraviolet light was emitted under at least two emitting conditions.

公开(公告)号：US20190108969A1

公开(公告)日：2019-04-11

申请号：US16088880

申请日：2016-03-28

Applicant: Hitachi High-Technologies Corporation

Inventor： Tomohiko OGATA ,  Masaki HASEGAWA ,  Hisaya MURAKOSHI ,  Katsunori ONUKI ,  Noriyuki KANEOKA

IPC: H01J37/147 ,  H01J37/22 ,  H01J37/29

CPC classification number: H01J37/147 ,  H01J37/04 ,  H01J37/05 ,  H01J37/224 ,  H01J37/226 ,  H01J37/29

Abstract: The objective of the present invention is to propose a charged particle beam device with which an imaging optical system and an irradiation optical system can be adjusted with high precision. In order to achieve this objective, provided is a charged particle beam device comprising: a first charged particle column which serves as an irradiation optical signal; a deflector that deflects charged particles which have passed through the inside of the first charged particle column toward an object; and a second charged particle column which serves as an imaging optical system. The charged particle beam device is provided with: a light source that emits light toward the object; and a control device that obtains, on the basis of detection charged particles generated according to irradiation of light emitted from the light source, a plurality of deflection signals which maintain a certain deflection state, and that selects or calculates, from the plurality of deflection signals or from relationship information produced from the plurality of deflection signals, a deflection signal that satisfies a predetermined condition.

公开(公告)号：US20130320209A1

公开(公告)日：2013-12-05

申请号：US13873725

申请日：2013-04-30

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroyasu SHICHI ,  Satoshi TOMIMATSU ,  Noriyuki KANEOKA ,  Kaoru UMEMURA ,  Koji ISHIGURO

IPC: H01J37/26

CPC classification number: H01J37/261 ,  H01J37/20 ,  H01J37/3045 ,  H01J2237/08 ,  H01J2237/20207 ,  H01J2237/24528 ,  H01J2237/28 ,  H01J2237/31713 ,  H01J2237/3174 ,  H01J2237/31749

Abstract: An ion beam processing apparatus includes an ion beam irradiation optical system that irradiates a rectangular ion beam to a sample on a first sample stage, an electron beam irradiation optical system that irradiates an electron beam to the sample, and a second sample stage to hold a test piece, extracted from the sample. The ion beam can be tilted by rotating the second sample stage about a tilting axis. A controller controls the width of skew of an intensity profile representing an edge of the rectangular ion beam in a direction perpendicular to a first direction in which the tilting axis of the second sample stage is projected on the second sample stage surface so that the width will be smaller than the width of skew of an intensity profile representing another edge of the ion beam in a direction parallel to the first direction.

Abstract translation: 一种离子束处理装置，包括：离子束照射光学系统，其将矩形离子束照射到第一样品台上的样品，向样品照射电子束的电子束照射光学系统;以及第二样品台， 试样，从样品中提取。 离子束可以通过使第二样品台围绕倾斜轴旋转来倾斜。 控制器控制表示矩形离子束在与第二样品台的倾斜轴投射到第二样品台表面上的第一方向垂直的方向上的强度分布的偏斜宽度，使得宽度将 小于在平行于第一方向的方向上表示离子束的另一边缘的强度分布的偏斜宽度。