OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR
    9.
    发明申请
    OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR 有权
    氧化物半导体薄膜晶体管

    公开(公告)号:US20100200857A1

    公开(公告)日:2010-08-12

    申请号:US12679667

    申请日:2008-11-27

    申请人: Mikio Shimada

    发明人: Mikio Shimada

    CPC分类号: H01L29/7869 H01L29/78618

    摘要: A transistor includes a gate electrode, a gate insulating layer, a semiconductor layer including an amorphous oxide, source-drain electrodes, and a protective layer on a substrate. The semiconductor layer includes a first region corresponding to a region in which the source-drain electrodes are formed, and a second region not corresponding to the region in which the source-drain electrodes are formed. At least the first region includes a crystalline component having a composition different from the composition of the amorphous oxide in the second region.

    摘要翻译: 晶体管包括栅电极,栅极绝缘层,包括非晶氧化物的半导体层,源 - 漏电极和保护层。 半导体层包括对应于形成源极 - 漏极的区域的第一区域和不对应于形成源极 - 漏极电极的区域的第二区域。 至少第一区域包括具有与第二区域中的无定形氧化物的组成不同的组成的结晶组分。

    Pneumatic pressure burglarproofing alarm
    10.
    发明申请
    Pneumatic pressure burglarproofing alarm 审中-公开
    气动防盗报警器

    公开(公告)号:US20070046445A1

    公开(公告)日:2007-03-01

    申请号:US11215030

    申请日:2005-08-31

    IPC分类号: B60R25/10

    摘要: It is, therefore, an object of the present invention to provide a burglarproofing alarm and particularly a pneumatic pressure burglarproofing alarm in which air pressure is detected to determine if an alarm should be issued. The burglarproofing alarm comprises a body case, a central control circuit, a sensor device and an alarm raising device disposed in the body case.

    摘要翻译: 因此,本发明的目的是提供一种防盗报警器,特别是一种气动防盗报警器,其中检测到气压以确定是否应发出报警。 防盗报警器包括主体壳体,中央控制电路,传感器装置和设置在主体壳体中的报警提升装置。