公开(公告)号：US08704429B2

公开(公告)日：2014-04-22

申请号：US13045118

申请日：2011-03-10

申请人： Hisato Yabuta ,  Makoto Kubota ,  Mikio Shimada ,  Kenji Takashima ,  Fumio Uchida ,  Kenji Maeda ,  Chiemi Shimizu

发明人： Hisato Yabuta ,  Makoto Kubota ,  Mikio Shimada ,  Kenji Takashima ,  Fumio Uchida ,  Kenji Maeda ,  Chiemi Shimizu

IPC分类号： H01L41/187

CPC分类号： C01G49/02 ,  B82Y30/00 ,  C01G29/00 ,  C01G49/0018 ,  C01P2002/34 ,  C01P2002/60 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2004/04 ,  C01P2004/10 ,  C01P2004/82 ,  C01P2006/60 ,  C04B35/26 ,  C04B2235/3298 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/76 ,  C04B2235/768 ,  C04B2235/80 ,  C04B2235/85 ,  H01L41/1878 ,  H01L41/43

摘要： Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure.

摘要翻译： 提供具有低漏电流值的无铅电介质陶瓷和作为其原料的氧化铋铁粉末。 氧化铋粉末至少包括：（A）包含具有钙钛矿型晶体结构的氧化铋的晶粒; （B）包含具有分类为空间群Pbam的晶体结构的氧化铋的晶粒; 和（C）包含分类为空间群I23的具有晶体结构的氧化铋铁或氧化铋的晶粒。 介电陶瓷由氧化铋铁氧化物制成，其中具有分类为空间群Pbam的晶体结构的氧化铋晶体分布在具有钙钛矿型晶体结构的氧化铋晶体的晶粒的晶界处。

公开(公告)号：US20110221302A1

公开(公告)日：2011-09-15

申请号：US13045118

申请日：2011-03-10

申请人： Hisato Yabuta ,  Makoto Kubota ,  Mikio Shimada ,  Kenji Takashima ,  Fumio Uchida ,  Kenji Maeda ,  Chiemi Shimizu

发明人： Hisato Yabuta ,  Makoto Kubota ,  Mikio Shimada ,  Kenji Takashima ,  Fumio Uchida ,  Kenji Maeda ,  Chiemi Shimizu

IPC分类号： H01L41/187 ,  C01G49/02

CPC分类号： C01G49/02 ,  B82Y30/00 ,  C01G29/00 ,  C01G49/0018 ,  C01P2002/34 ,  C01P2002/60 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2004/04 ,  C01P2004/10 ,  C01P2004/82 ,  C01P2006/60 ,  C04B35/26 ,  C04B2235/3298 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/76 ,  C04B2235/768 ,  C04B2235/80 ,  C04B2235/85 ,  H01L41/1878 ,  H01L41/43

摘要： Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure.

摘要翻译： 提供具有低漏电流值的无铅电介质陶瓷和作为其原料的氧化铋铁粉末。 氧化铋粉末至少包括：（A）包含具有钙钛矿型晶体结构的氧化铋的晶粒; （B）包含具有分类为空间群Pbam的晶体结构的氧化铋的晶粒; 和（C）包含分类为空间群I23的具有晶体结构的氧化铋铁或氧化铋的晶粒。 介电陶瓷由氧化铋铁氧化物制成，其中具有分类为空间群Pbam的晶体结构的氧化铋晶体分布在具有钙钛矿型晶体结构的氧化铋晶体的晶粒的晶界处。

公开(公告)号：US07399067B2

公开(公告)日：2008-07-15

申请号：US10561247

申请日：2005-02-23

申请人： Makoto Kubota ,  Motokazu Kobayashi ,  Shinji Eritate ,  Fumio Uchida ,  Kenji Maeda ,  Chiemi Shimizu

发明人： Makoto Kubota ,  Motokazu Kobayashi ,  Shinji Eritate ,  Fumio Uchida ,  Kenji Maeda ,  Chiemi Shimizu

IPC分类号： B41J2/045

CPC分类号： H01L41/1876 ,  B41J2/14233 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/318 ,  Y10T29/42 ,  Y10T428/265

摘要： There is disclosed a piezoelectric thin film having less non-uniform portions and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula Pb(1-x)Lax(ZryTi1-y)O3 (where 0≦x

摘要翻译： 公开了一种具有较小不均匀部分并保持令人满意的压电特性的压电薄膜，该薄膜的制造方法，使用该压电薄膜的压电元件以及使用该压电元件的喷墨系统记录头。 在通过溶胶 - 凝胶法在基底上形成并由通式Pb（1-x）La xS（xi）x（x））表示的钙钛矿晶体的压电薄膜 （其中0 <= x <1，0.05 <= y <= 1），膜厚度为1 / 薄膜为1000nm以上至4000nm以下，薄膜的任意部分的最大值和最小值之间的差为0.05以下。

公开(公告)号：US07036915B2

公开(公告)日：2006-05-02

申请号：US10665571

申请日：2003-09-22

申请人： Shinji Eritate ,  Motokazu Kobayashi ,  Makoto Kubota ,  Fumio Uchida ,  Chiemi Shimizu ,  Kenji Maeda

发明人： Shinji Eritate ,  Motokazu Kobayashi ,  Makoto Kubota ,  Fumio Uchida ,  Chiemi Shimizu ,  Kenji Maeda

IPC分类号： B41J2/045

CPC分类号： B41J2/161 ,  B41J2/1645 ,  B41J2/1646 ,  C23C18/08 ,  C23C18/1204 ,  H01L41/1876 ,  H01L41/318

摘要： A composition for forming a piezoelectric film containing a dispersoid obtained from a metallic compound includes at least one of 1,8-diazabicyclo[5.4.0]-7-undecene, 1,5-diazabicyclo[4.3.0]non-5-ene, and 1,4-diazabicyclo[2.2.2]octane.

摘要翻译： 用于形成含有由金属化合物获得的分散质的压电膜的组合物包括1,8-二氮杂双环[5.4.0] -7-十一碳烯，1,5-二氮杂双环[4.3.0]壬-5-烯中的至少一种 和1,4-二氮杂双环[2.2.2]辛烷。

公开(公告)号：US20120251820A1

公开(公告)日：2012-10-04

申请号：US13524249

申请日：2012-06-15

申请人： Makoto Kubota ,  Motokazu Kobayashi ,  Shinji Eritate ,  Fumio Uchida ,  Kenji Maeda ,  Chiemi Shimizu

发明人： Makoto Kubota ,  Motokazu Kobayashi ,  Shinji Eritate ,  Fumio Uchida ,  Kenji Maeda ,  Chiemi Shimizu

IPC分类号： H01L41/18 ,  H01L41/22

CPC分类号： H01L41/1876 ,  B41J2/14233 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/318 ,  Y10T29/42 ,  Y10T428/265

摘要： There is are disclosed a piezoelectric thin film having less non-uniform portions and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula Pb(1−x)Lax (ZryTi1−y) O3 (where 0≦x

摘要翻译： 公开了一种具有较小不均匀部分并保持令人满意的压电特性的压电薄膜，该薄膜的制造方法，使用该压电薄膜的压电元件以及使用该压电元件的喷墨系统记录头。 在通过溶胶 - 凝胶法在基底上形成的由通式Pb（1-x）Lax（ZryTi1-y）O3（其中0＆lt; nlE; x <1,0.05＆amp; nlE; y＆amp; nlE）表示的钙钛矿型晶体的压电薄膜中， 如图1所示，薄膜的膜厚为1000nm以上且4000nm以下，薄膜的任意部分的最大值和最小值之间的差为0.05以下。

公开(公告)号：US20070262678A1

公开(公告)日：2007-11-15

申请号：US11741895

申请日：2007-04-30

申请人： Makoto Kubota ,  Motokazu Kobayashi ,  Keiko Abe ,  Fumio Uchida ,  Kenji Maeda ,  Chiemi Shimizu

发明人： Makoto Kubota ,  Motokazu Kobayashi ,  Keiko Abe ,  Fumio Uchida ,  Kenji Maeda ,  Chiemi Shimizu

IPC分类号： H01L41/187

CPC分类号： C04B35/6264 ,  B41J2/14233 ,  B41J2202/03 ,  C04B35/493 ,  C04B2235/3227 ,  C04B2235/441 ,  C04B2235/449 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/1878

摘要： A piezoelectric element having a piezoelectric film and one pair of electrodes being in contact with the piezoelectric film on a substrate, wherein the piezoelectric film has a structure in which a lead-containing piezoelectric film and a lead-free piezoelectric film are laminated, and in the piezoelectric film, a layer furthest from the substrate and a layer closest to the substrate are lead-free piezoelectric films.

摘要翻译： 一种压电元件，其具有压电膜和一对电极与基板上的压电膜接触，其中，压电膜具有层叠有含铅压电膜和无铅压电膜的结构，并且 压电膜，离基板最远的层和最靠近基板的层是无铅压电膜。

公开(公告)号：US07399066B2

公开(公告)日：2008-07-15

申请号：US10928277

申请日：2004-08-30

申请人： Makoto Kubota ,  Motokazu Kobayashi ,  Shinji Eritate ,  Hisao Suzuki ,  Fumio Uchida ,  Chiemi Shimizu ,  Kenji Maeda

发明人： Makoto Kubota ,  Motokazu Kobayashi ,  Shinji Eritate ,  Hisao Suzuki ,  Fumio Uchida ,  Chiemi Shimizu ,  Kenji Maeda

IPC分类号： B41J2/045 ,  H01L41/00

CPC分类号： B41J2/14233 ,  B41J2/14298 ,  B41J2/161 ,  B41J2/1617 ,  B41J2/1629 ,  B41J2/1645 ,  H01L41/0477 ,  H01L41/0478 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/318

摘要： A piezoelectric element including a vibrating plate, a lower electrode, a piezoelectric film and an upper electrode laminated in this order, wherein the lower electrode, the upper electrode and the piezoelectric film are formed by a perovskite type oxide while the vibrating plate is formed by a metal oxide, and a junction interface is substantially absent between the vibrating plate and the lower electrode, between the lower electrode and the piezoelectric film and between the piezoelectric film and the upper electrode.

摘要翻译： 一种包括振动板，下电极，压电膜和上电极的压电元件，其顺序层叠，其中下电极，上电极和压电膜由钙钛矿型氧化物形成，而振动板由 金属氧化物和接合界面基本上不存在于振动板和下部电极之间，下部电极和压电膜之间以及压电膜和上部电极之间。

公开(公告)号：US20070097182A1

公开(公告)日：2007-05-03

申请号：US10561247

申请日：2005-02-23

申请人： Makoto Kubota ,  Motokazu Kobayashi ,  Shinji Eritate ,  Fumio Uchida ,  Kenji Maeda ,  Chiemi Shimizu

发明人： Makoto Kubota ,  Motokazu Kobayashi ,  Shinji Eritate ,  Fumio Uchida ,  Kenji Maeda ,  Chiemi Shimizu

IPC分类号： B41J2/045

CPC分类号： H01L41/1876 ,  B41J2/14233 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/318 ,  Y10T29/42 ,  Y10T428/265

摘要： There is disclosed a piezoelectric thin film having less non-uniform portion and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula Pb(1-x)Lax(ZryTi1-y)O3 (where 0≦x

摘要翻译： 公开了一种具有较小不均匀部分并保持令人满意的压电特性的压电薄膜，该薄膜的制造方法，使用该压电薄膜的压电元件和使用该压电元件的喷墨系统记录头。 在通过溶胶 - 凝胶法在基底上形成并由通式Pb（1-x）La xS（xi）x（x））表示的钙钛矿晶体的压电薄膜 （其中0 <= x <1，0.05 <= y <= 1），膜厚度为1 / 薄膜为1000nm以上至4000nm以下，薄膜的任意部分的最大值和最小值之间的差为0.05以下。

公开(公告)号：US07187024B2

公开(公告)日：2007-03-06

申请号：US10662472

申请日：2003-09-16

申请人： Motokazu Kobayashi ,  Makoto Kubota ,  Hisao Suzuki ,  Fumio Uchida ,  Chiemi Shimizu ,  Kenji Maeda

发明人： Motokazu Kobayashi ,  Makoto Kubota ,  Hisao Suzuki ,  Fumio Uchida ,  Chiemi Shimizu ,  Kenji Maeda

IPC分类号： H01L29/78

CPC分类号： H01L41/318 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1645 ,  H01L41/0477 ,  H01L41/0973 ,  H01L41/1876

摘要： In a piezoelectric element having a piezoelectric film sandwiched between a lower electrode and an upper electrode, the lower electrode and/or the upper electrode and the piezoelectric film comprise perovskite oxide and a contact interface between the lower electrode and/or the upper electrode and the piezoelectric film does not exist and a region where crystals of the lower electrode and/or the upper electrode and crystals of the piezoelectric film are mixed exists between the lower electrode and/or the upper electrode and the piezoelectric film.

摘要翻译： 在具有夹在下电极和上电极之间的压电薄膜的压电元件中，下电极和/或上电极和压电薄膜包括钙钛矿氧化物和下电极和/或上电极之间的接触界面 压电薄膜不存在，下电极和/或上电极与压电薄膜之间存在下电极和/或上电极晶体与压电薄膜晶体混合的区域。

公开(公告)号：US06884649B2

公开(公告)日：2005-04-26

申请号：US10665422

申请日：2003-09-22

申请人： Motokazu Kobayashi ,  Toshiya Yuasa ,  Makoto Kubota ,  Shinji Eritate ,  Fumio Uchida ,  Chiemi Shimizu ,  Kenji Maeda

发明人： Motokazu Kobayashi ,  Toshiya Yuasa ,  Makoto Kubota ,  Shinji Eritate ,  Fumio Uchida ,  Chiemi Shimizu ,  Kenji Maeda

IPC分类号： C04B35/462 ,  B41J2/045 ,  B41J2/055 ,  B41J2/135 ,  B41J2/14 ,  B41J2/16 ,  C04B35/46 ,  H01L41/09 ,  H01L41/187 ,  H01L41/22 ,  H01L41/317 ,  H01L41/318 ,  H01L41/39 ,  H01L41/43 ,  H01L21/00

CPC分类号： B41J2/161 ,  B41J2/164 ,  B41J2002/14258 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/318

摘要： The invention provides a method for manufacturing a piezoelectric element including a coating step of coating a substrate with a coating liquid for forming the piezoelectric element thereby forming a coated film, a drying step of drying the coated film, a preliminary sintering step of preliminarily sintering the coated film thereby forming an oxide film, a final sintering step of finally sintering the oxide film thereby forming a piezoelectric film, and a cooling step of cooling the piezoelectric film, wherein the steps are executed in the presence of a moisture-containing gas; in the coating step the substrate has a temperature equal to or less than 50° C. and the moisture-containing gas has a relative humidity of 60% RH or less at 25° C.; in the drying step, the substrate has a temperature equal to or less than 200° C. and the relative humidity is 10 to 70% RH; in the preliminary sintering step the substrate has a temperature of 200 to 450° C. and the relative humidity is 70 to 100% RH; in the final sintering step the substrate has a temperature of 500 to 800° C. and the relative humidity is 70 to 100% RH.

摘要翻译： 本发明提供了一种制造压电元件的方法，该压电元件包括​​用用于形成压电元件的涂布液涂覆基材的涂布步骤，从而形成涂膜，干燥涂膜的干燥步骤，预烧结步骤 从而形成氧化膜，最终烧结氧化膜从而形成压电膜的最终烧结步骤以及冷却压电膜的冷却步骤，其中步骤在含水气体存在下进行; 在涂布步骤中，基材的温度等于或低于50℃，含湿气体在25℃下的相对湿度为60％RH或更低。 在干燥工序中，基板的温度为200℃以上，相对湿度为10〜70％RH， 在预烧结步骤中，基板的温度为200〜450℃，相对湿度为70〜100％RH; 在最终烧结步骤中，基板的温度为500〜800℃，相对湿度为70〜100％RH。