公开(公告)号：US08513662B2

公开(公告)日：2013-08-20

申请号：US12992071

申请日：2009-05-11

申请人： Hisato Yabuta ,  Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

发明人： Hisato Yabuta ,  Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

IPC分类号： H01L29/72

CPC分类号： H01L29/78645 ,  H01L29/78633

摘要： Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an optical path through which the light passes, for adjusting at least one factor selected from an intensity, irradiation time and the wavelength of the light, wherein a threshold voltage of the semiconductor element is varied by the light adjusted by the dimming mechanism.

摘要翻译： 提供一种半导体器件，其包括至少包含半导体作为元件的半导体元件，其特征在于包括：用于使波长比半导体的吸收边缘波长长的光照射半导体的机构; 以及调光机构，其设置在光通过的光路的一部分中，用于调节从强度，照射时间和光的波长选择的至少一个因素，其中半导体元件的阈值电压被改变 光由调光机构调节。

公开(公告)号：US08502217B2

公开(公告)日：2013-08-06

申请号：US12679901

申请日：2008-11-27

申请人： Ayumu Sato ,  Ryo Hayashi ,  Hisato Yabuta ,  Tomohiro Watanabe

发明人： Ayumu Sato ,  Ryo Hayashi ,  Hisato Yabuta ,  Tomohiro Watanabe

IPC分类号： H01L29/12 ,  H01L23/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L27/01

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/78606

摘要： Provided is an oxide semiconductor device including an oxide semiconductor layer and an insulating layer coming into contact with the oxide semiconductor layer in which the insulating layer includes: a first insulating layer coming into contact with an oxide semiconductor, having a thickness of 50 nm or more, and including an oxide containing Si and O; a second insulating layer coming into contact with the first insulating layer, having a thickness of 50 nm or more, and including a nitride containing Si and N; and a third insulating layer coming into contact with the second insulating layer, the first insulating layer and the second insulating layer having hydrogen contents of 4×1021 atoms/cm3 or less, and the third insulating layer having a hydrogen content of more than 4×1021 atoms/cm3.

摘要翻译： 提供一种氧化物半导体器件，其包括氧化物半导体层和与氧化物半导体层接触的绝缘层，其中绝缘层包括：与氧化物半导体接触的第一绝缘层，其厚度为50nm以上 并且包括含有Si和O的氧化物; 与第一绝缘层接触的第二绝缘层，其厚度为50nm以上，并且包括含有Si和N的氮化物; 以及与第二绝缘层接触的第三绝缘层，具有4×1021原子/ cm3以下的氢含量的第一绝缘层和第二绝缘层，以及氢含量大于4× 1021原子/ cm3。

公开(公告)号：US08445902B2

公开(公告)日：2013-05-21

申请号：US12990408

申请日：2009-04-28

申请人： Ayumu Sato ,  Ryo Hayashi ,  Hisato Yabuta ,  Masafumi Sano

发明人： Ayumu Sato ,  Ryo Hayashi ,  Hisato Yabuta ,  Masafumi Sano

IPC分类号： H01L29/10 ,  H01L29/12

CPC分类号： H01L29/7869 ,  H01L29/78621

摘要： Provided are a coplanar structure thin film transistor that allows a threshold voltage to change only a little under electric stress, and a method of manufacturing the same. The thin film transistor includes on a substrate at least: a gate electrode; a gate insulating layer; an oxide semiconductor layer including a source electrode, a drain electrode, and a channel region; a channel protection layer; and an interlayer insulating layer. The channel protection layer includes one or more layers, the layer in contact with the oxide semiconductor layer among the one or more layers being made of an insulating material containing oxygen, ends of the channel protection layer are thinner than a central part of the channel protection layer, the interlayer insulating layer contains hydrogen, and regions of the oxide semiconductor layer that are in direct contact with the interlayer insulating layer form the source electrode and the drain electrode.

摘要翻译： 提供一种共面结构薄膜晶体管，其制造方法允许阈值电压在电应力下变化很小。 薄膜晶体管至少在基板上包括：栅电极; 栅极绝缘层; 包括源电极，漏电极和沟道区的氧化物半导体层; 通道保护层; 和层间绝缘层。 沟道保护层包括一层或多层，一层或多层中与氧化物半导体层接触的层由含氧的绝缘材料制成，沟道保护层的端部比通道保护层的中心部分薄 层间绝缘层含有氢，与层间绝缘层直接接触的氧化物半导体层的区域形成源电极和漏电极。

公开(公告)号：US20120146021A1

公开(公告)日：2012-06-14

申请号：US13403536

申请日：2012-02-23

申请人： Hisato Yabuta ,  Ayanori Endo ,  Nobuyuki Kaji ,  Ryo Hayashi

发明人： Hisato Yabuta ,  Ayanori Endo ,  Nobuyuki Kaji ,  Ryo Hayashi

IPC分类号： H01L33/08

CPC分类号： H01L29/247 ,  H01L29/66969 ,  H01L29/78693

摘要： An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: M≧0.94×(7.121x+5.941y+5.675z)/(x+y+z)   (1) where 0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z≠0.

摘要翻译： 无定形氧化物半导体以In x Ga y Zn z的原子比含有选自In，Ga和Zn中的至少一种元素，其中非晶氧化物半导体的密度M由以下关系式（1）表示：M≥0.94×（7.121 x + 5.941y + 5.675z）/（x + y + z）（1）其中0＆nlE; x＆nlE; 1,0＆nlE; y＆nlE; 1,0和nlE; z＆nlE; 1和x + y + z≠0。

公开(公告)号：US20110042670A1

公开(公告)日：2011-02-24

申请号：US12990408

申请日：2009-04-28

申请人： Ayumu Sato ,  Ryo Hayashi ,  Hisato Yabuta ,  Masafumi Sano

发明人： Ayumu Sato ,  Ryo Hayashi ,  Hisato Yabuta ,  Masafumi Sano

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/7869 ,  H01L29/78621

摘要： Provided are a coplanar structure thin film transistor that allows a threshold voltage to change only a little under electric stress, and a method of manufacturing the same. The thin film transistor includes on a substrate at least: a gate electrode; a gate insulating layer; an oxide semiconductor layer including a source electrode, a drain electrode, and a channel region; a channel protection layer; and an interlayer insulating layer. The channel protection layer includes one or more layers, the layer in contact with the oxide semiconductor layer among the one or more layers being made of an insulating material containing oxygen, ends of the channel protection layer are thinner than a central part of the channel protection layer, the interlayer insulating layer contains hydrogen, and regions of the oxide semiconductor layer that are in direct contact with the interlayer insulating layer form the source electrode and the drain electrode.

摘要翻译： 提供一种共面结构薄膜晶体管，其制造方法允许阈值电压在电应力下变化很小。 薄膜晶体管至少在基板上包括：栅电极; 栅极绝缘层; 包括源电极，漏电极和沟道区的氧化物半导体层; 通道保护层; 和层间绝缘层。 沟道保护层包括一层或多层，一层或多层中与氧化物半导体层接触的层由含氧的绝缘材料制成，沟道保护层的端部比通道保护层的中心部分薄 层间绝缘层含有氢，与层间绝缘层直接接触的氧化物半导体层的区域形成源电极和漏电极。

公开(公告)号：US20100283049A1

公开(公告)日：2010-11-11

申请号：US12679901

申请日：2008-11-27

申请人： Ayumu Sato ,  Ryo Hayashi ,  Hisato Yabuta ,  Tomohiro Watanabe

发明人： Ayumu Sato ,  Ryo Hayashi ,  Hisato Yabuta ,  Tomohiro Watanabe

IPC分类号： H01L33/00 ,  H01L29/02 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/78606

摘要： Provided is an oxide semiconductor device including an oxide semiconductor layer and an insulating layer coming into contact with the oxide semiconductor layer in which the insulating layer includes: a first insulating layer coming into contact with an oxide semiconductor, having a thickness of 50 nm or more, and including an oxide containing Si and O; a second insulating layer coming into contact with the first insulating layer, having a thickness of 50 nm or more, and including a nitride containing Si and N; and a third insulating layer coming into contact with the second insulating layer, the first insulating layer and the second insulating layer having hydrogen contents of 4×1021 atoms/cm3 or less, and the third insulating layer having a hydrogen content of more than 4×1021 atoms/cm3.

摘要翻译： 提供一种氧化物半导体器件，其包括氧化物半导体层和与氧化物半导体层接触的绝缘层，其中绝缘层包括：与氧化物半导体接触的第一绝缘层，其厚度为50nm以上 并且包括含有Si和O的氧化物; 与第一绝缘层接触的第二绝缘层，其厚度为50nm以上，并且包括含有Si和N的氮化物; 以及与第二绝缘层接触的第三绝缘层，具有4×1021原子/ cm3以下的氢含量的第一绝缘层和第二绝缘层，以及氢含量大于4× 1021原子/ cm3。

公开(公告)号：US07829444B2

公开(公告)日：2010-11-09

申请号：US11269641

申请日：2005-11-09

申请人： Hisato Yabuta ,  Masafumi Sano ,  Tatsuya Iwasaki ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

发明人： Hisato Yabuta ,  Masafumi Sano ,  Tatsuya Iwasaki ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L21/20

CPC分类号： H01L29/78618 ,  H01L29/66969 ,  H01L29/78693

摘要： Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.

摘要翻译： 提供一种用于制造场效应晶体管的新颖方法。 在基板上形成无定形氧化物层之前，在臭氧气氛中将紫外线照射到基板表面上，将等离子体照射到基板表面上，或者通过含有过氧化氢的化学溶液清洁基板表面。

公开(公告)号：US20100267198A1

公开(公告)日：2010-10-21

申请号：US12824568

申请日：2010-06-28

申请人： HISATO YABUTA ,  MASAFUMI SANO ,  TATSUYA IWASAKI ,  HIDEO HOSONO ,  Toshio Kamiya ,  KENJI NOMURA

发明人： HISATO YABUTA ,  MASAFUMI SANO ,  TATSUYA IWASAKI ,  HIDEO HOSONO ,  Toshio Kamiya ,  KENJI NOMURA

IPC分类号： H01L21/36

CPC分类号： H01L29/78618 ,  H01L29/66969 ,  H01L29/78693

摘要： Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.

摘要翻译： 提供一种用于制造场效应晶体管的新颖方法。 在基板上形成无定形氧化物层之前，在臭氧气氛中将紫外线照射到基板表面上，将等离子体照射到基板表面上，或者通过含有过氧化氢的化学溶液清洁基板表面。

公开(公告)号：US20100051936A1

公开(公告)日：2010-03-04

申请号：US12515268

申请日：2007-11-20

申请人： Ryo Hayashi ,  Nobuyuki Kaji ,  Hisato Yabuta

发明人： Ryo Hayashi ,  Nobuyuki Kaji ,  Hisato Yabuta

IPC分类号： H01L33/00 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.

摘要翻译： 提供了一种底栅型薄膜晶体管，其包括：基板（1），栅电极（2），作为栅极绝缘膜的第一绝缘膜（3），作为沟道层的氧化物半导体层（4），第二 作为保护层的绝缘膜（5），源电极（6）和漏电极（7），其中氧化物半导体层（4）包括含有选自In，Zn 和Sn，并且第二绝缘膜（5）包括形成为与氧化物半导体层（4）接触的非晶形氧化物绝缘体，并且其中包含观察为氧的解吸气体的3.8×1019分子/ cm 3以上 通过温度程序解吸质谱。

公开(公告)号：US20100044703A1

公开(公告)日：2010-02-25

申请号：US12594629

申请日：2008-04-15

申请人： Hisato Yabuta ,  Ayanori Endo ,  Nobuyuki Kaji ,  Ryo Hayashi

发明人： Hisato Yabuta ,  Ayanori Endo ,  Nobuyuki Kaji ,  Ryo Hayashi

IPC分类号： H01L29/24 ,  H01L29/786

CPC分类号： H01L29/247 ,  H01L29/66969 ,  H01L29/78693

摘要： An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: M≧0.94×(7.121x+5.941y+5.675z)/(x+y+z)   (1) where 0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z≠0.

摘要翻译： 无定形氧化物半导体以In x Ga y Zn z的原子比含有选自In，Ga和Zn中的至少一种元素，其中非晶氧化物半导体的密度M由以下关系式（1）表示：M≥0.94×（7.121 x + 5.941y + 5.675z）/（x + y + z）（1）其中0＆nlE; x＆nlE; 1,0＆nlE; y＆nlE; 1,0和nlE; z＆nlE; 1和x + y + z≠0。