Pneumatic pressure burglarproofing alarm
    1.
    发明申请
    Pneumatic pressure burglarproofing alarm 审中-公开
    气动防盗报警器

    公开(公告)号:US20070046445A1

    公开(公告)日:2007-03-01

    申请号:US11215030

    申请日:2005-08-31

    IPC分类号: B60R25/10

    摘要: It is, therefore, an object of the present invention to provide a burglarproofing alarm and particularly a pneumatic pressure burglarproofing alarm in which air pressure is detected to determine if an alarm should be issued. The burglarproofing alarm comprises a body case, a central control circuit, a sensor device and an alarm raising device disposed in the body case.

    摘要翻译: 因此,本发明的目的是提供一种防盗报警器,特别是一种气动防盗报警器,其中检测到气压以确定是否应发出报警。 防盗报警器包括主体壳体,中央控制电路,传感器装置和设置在主体壳体中的报警提升装置。

    Rearview mirror having an alarm
    2.
    发明申请
    Rearview mirror having an alarm 审中-公开
    后视镜有报警

    公开(公告)号:US20070046443A1

    公开(公告)日:2007-03-01

    申请号:US11214873

    申请日:2005-08-31

    IPC分类号: B60R25/10 G02B5/08

    CPC分类号: B60R25/1004 B60R2001/1223

    摘要: A rearview mirror having an alarm used in a car is disclosed. The rearview mirror comprises a mirror case and a lens. The burglarproofing alarm is disposed in the rearview mirror integrated together with the rearview mirror since a sensor device and an alarm-raising device are communicatively connected to a central control circuit in the mirror case.

    摘要翻译: 公开了一种在汽车中使用的报警器的后视镜。 后视镜包括镜壳和透镜。 防盗报警器配置在与后视镜一体的后视镜中,因为传感器装置和报警提升装置可通信地连接到镜壳中的中央控制电路。

    OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR
    4.
    发明申请
    OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR 有权
    氧化物半导体薄膜晶体管

    公开(公告)号:US20100200857A1

    公开(公告)日:2010-08-12

    申请号:US12679667

    申请日:2008-11-27

    申请人: Mikio Shimada

    发明人: Mikio Shimada

    CPC分类号: H01L29/7869 H01L29/78618

    摘要: A transistor includes a gate electrode, a gate insulating layer, a semiconductor layer including an amorphous oxide, source-drain electrodes, and a protective layer on a substrate. The semiconductor layer includes a first region corresponding to a region in which the source-drain electrodes are formed, and a second region not corresponding to the region in which the source-drain electrodes are formed. At least the first region includes a crystalline component having a composition different from the composition of the amorphous oxide in the second region.

    摘要翻译: 晶体管包括栅电极,栅极绝缘层,包括非晶氧化物的半导体层,源 - 漏电极和保护层。 半导体层包括对应于形成源极 - 漏极的区域的第一区域和不对应于形成源极 - 漏极电极的区域的第二区域。 至少第一区域包括具有与第二区域中的无定形氧化物的组成不同的组成的结晶组分。

    THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS USING THE SAME
    8.
    发明申请
    THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS USING THE SAME 有权
    薄膜晶体管及其制造方法及其显示装置

    公开(公告)号:US20100213459A1

    公开(公告)日:2010-08-26

    申请号:US12672103

    申请日:2008-09-18

    IPC分类号: H01L29/786 H01L21/44

    摘要: A transistor is constituted of a gate electrode 2, a gate insulation layer 3, a semiconductor layer 4 formed of an amorphous oxide, a source electrode 5, a drain electrode 6 and a protective layer 7. The protective layer 7 is provided on the semiconductor layer 4 in contact with the semiconductor layer 4, and the semiconductor layer 4 includes a first layer at least functioning as a channel layer and a second layer having higher resistance than the first layer. The first layer is provided on the gate electrode 2 side of the semiconductor layer 4 and the second layer is provided on the protective layer 7 side of the semiconductor layer 4.

    摘要翻译: 晶体管由栅电极2,栅绝缘层3,由非晶氧化物形成的半导体层4,源电极5,漏电极6和保护层7构成。保护层7设置在半导体 层4与半导体层4接触,并且半导体层4包括至少用作沟道层的第一层和具有比第一层更高的电阻的第二层。 第一层设置在半导体层4的栅电极2侧,第二层设置在半导体层4的保护层7侧。