公开(公告)号：US20190007575A1

公开(公告)日：2019-01-03

申请号：US16001394

申请日：2018-06-06

申请人： Satoru HIRAKATA ,  Kenichi TAKEDA

发明人： Satoru HIRAKATA ,  Kenichi TAKEDA

IPC分类号： H04N1/00 ,  G06F3/12

摘要： A system includes a server to distribute one or more applications and an image processing apparatus communicable with the server. The server includes circuitry. The circuitry receives information relating to a device type of the image processing apparatus from the image processing apparatus. The circuitry changes, based on the received information relating to the device type, a part of a screen design relating to an application list screen. The circuitry transmits, to the image processing apparatus, information relating to the application list screen in which the part of the screen design is changed based on the information relating to the device type. The browser executes an application command for transmitting the information relating to the device type to the server. The browser displays the application list screen in which the part of the screen design is changed based on the information relating to the device type.

公开(公告)号：US09425380B2

公开(公告)日：2016-08-23

申请号：US14130671

申请日：2012-06-26

申请人： Jumpei Hayashi ,  Kenichi Takeda ,  Shinya Koyama ,  Kenichi Akashi ,  Tatsuo Furuta

发明人： Jumpei Hayashi ,  Kenichi Takeda ,  Shinya Koyama ,  Kenichi Akashi ,  Tatsuo Furuta

IPC分类号： H01L41/083 ,  B41J2/14 ,  C04B35/468 ,  C04B35/49 ,  C04B35/626 ,  C04B35/634 ,  H01L41/09 ,  H01L41/187 ,  H02N2/10 ,  H02N2/16

CPC分类号： H01L41/083 ,  B41J2/14201 ,  B41J2/14233 ,  B41J2202/03 ,  C04B35/4682 ,  C04B35/49 ,  C04B35/6261 ,  C04B35/62685 ,  C04B35/63416 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3236 ,  C04B2235/3244 ,  C04B2235/3248 ,  C04B2235/3262 ,  C04B2235/40 ,  C04B2235/449 ,  C04B2235/652 ,  C04B2235/6567 ,  C04B2235/6582 ,  C04B2235/6584 ,  C04B2235/72 ,  C04B2235/768 ,  C04B2235/77 ,  C04B2235/78 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/79 ,  C04B2235/80 ,  C04B2235/85 ,  H01L41/09 ,  H01L41/0973 ,  H01L41/1871 ,  H02N2/106 ,  H02N2/163

摘要： A lead-free piezoelectric element that stably operates in a wide operating temperature range contains a lead-free piezoelectric material. The piezoelectric element includes a first electrode, a second electrode, and a piezoelectric material that includes a perovskite-type metal oxide represented by (Ba1-xCax)a(Ti1-yZry)O3 (1.00≦a≦1.01, 0.02≦x≦0.30, 0.020≦y≦0.095, and y≦x) as a main component and manganese incorporated in the perovskite-type metal oxide. The manganese content relative to 100 parts by weight of the perovskite-type metal oxide is 0.02 parts by weight or more and 0.40 parts by weight or less on a metal basis.

摘要翻译： 在宽工作温度范围内稳定工作的无铅压电元件包含无铅压电材料。 压电元件包括​​第一电极，第二电极和压电材料，其包括由（Ba1-xCax）a（Ti1-yZry）O3（1.00≤a≤1.01,0.02≤x≤0.30）表示的钙钛矿型金属氧化物 ，0.020≤y≤0.095，y≤x）作为主要成分，掺入钙钛矿型金属氧化物中的锰。 相对于100重量份的钙钛矿型金属氧化物的锰含量为0.02重量份以上且0.40重量份以下。

公开(公告)号：US08212649B2

公开(公告)日：2012-07-03

申请号：US13238056

申请日：2011-09-21

申请人： Tsuyoshi Fujiwara ,  Toshinori Imai ,  Kenichi Takeda ,  Hiromi Shimamoto

发明人： Tsuyoshi Fujiwara ,  Toshinori Imai ,  Kenichi Takeda ,  Hiromi Shimamoto

IPC分类号： H01C1/12

CPC分类号： H01L23/5228 ,  H01L27/0688 ,  H01L28/24 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device according to the present invention includes: a lower-surface oxidation preventing insulating film formed on a lower surface of a metal resistor element; an upper-surface oxidation preventing insulating film formed on an upper surface of the metal resistor element; and a side-surface oxidation preventing insulating film formed only near a side surface of the metal resistor element by performing anisotropic etching after being deposited on a whole surface of a wafer in a process separated from the lower-surface oxidation preventing insulating film and the upper-surface oxidation preventing insulating film. According to the present invention, it is possible to prevent the increase of the resistance value due to the oxidation of the metal resistor element and also to prevent the increase of the parasitic capacitance between metal wiring layers without complicating the fabrication process.

摘要翻译： 根据本发明的半导体器件包括：形成在金属电阻器元件的下表面上的下表面的氧化防止绝缘膜; 形成在所述金属电阻元件的上表面上的上表面氧化防止绝缘膜; 以及侧面氧化防止绝缘膜，其仅在金属电阻元件的侧面附近形成，在与下表面的氧化防止绝缘膜分离的工序中沉积在晶片的整个表面上，进行各向异性蚀刻 表面氧化防止绝缘膜。 根据本发明，可以防止由于金属电阻元件的氧化引起的电阻值的增加，并且还可以防止金属布线层之间的寄生电容的增加，而不会使制造工艺复杂化。

公开(公告)号：US20120009756A1

公开(公告)日：2012-01-12

申请号：US13238056

申请日：2011-09-21

申请人： Tsuyoshi FUJIWARA ,  Toshinori IMAI ,  Kenichi TAKEDA ,  Hiromi SHIMAMOTO

发明人： Tsuyoshi FUJIWARA ,  Toshinori IMAI ,  Kenichi TAKEDA ,  Hiromi SHIMAMOTO

IPC分类号： H01L21/02

CPC分类号： H01L23/5228 ,  H01L27/0688 ,  H01L28/24 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device according to the present invention includes: a lower-surface oxidation preventing insulating film formed on a lower surface of a metal resistor element; an upper-surface oxidation preventing insulating film formed on an upper surface of the metal resistor element; and a side-surface oxidation preventing insulating film formed only near a side surface of the metal resistor element by performing anisotropic etching after being deposited on a whole surface of a wafer in a process separated from the lower-surface oxidation preventing insulating film and the upper-surface oxidation preventing insulating film. According to the present invention, it is possible to prevent the increase of the resistance value due to the oxidation of the metal resistor element and also to prevent the increase of the parasitic capacitance between metal wiring layers without complicating the fabrication process.

摘要翻译： 根据本发明的半导体器件包括：形成在金属电阻器元件的下表面上的下表面的氧化防止绝缘膜; 形成在所述金属电阻元件的上表面上的上表面氧化防止绝缘膜; 以及侧面氧化防止绝缘膜，其仅在金属电阻元件的侧面附近形成，在与下表面的氧化防止绝缘膜分离的工序中沉积在晶片的整个表面上，进行各向异性蚀刻 表面氧化防止绝缘膜。 根据本发明，可以防止由于金属电阻元件的氧化引起的电阻值的增加，并且还可以防止金属布线层之间的寄生电容的增加，而不会使制造工艺复杂化。

公开(公告)号：US08040214B2

公开(公告)日：2011-10-18

申请号：US12481384

申请日：2009-06-09

申请人： Tsuyoshi Fujiwara ,  Toshinori Imai ,  Kenichi Takeda ,  Hiromi Shimamoto

发明人： Tsuyoshi Fujiwara ,  Toshinori Imai ,  Kenichi Takeda ,  Hiromi Shimamoto

IPC分类号： H01C1/12

CPC分类号： H01L23/5228 ,  H01L27/0688 ,  H01L28/24 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device according to the present invention includes: a lower-surface oxidation preventing insulating film formed on a lower surface of a metal resistor element; an upper-surface oxidation preventing insulating film formed on an upper surface of the metal resistor element; and a side-surface oxidation preventing insulating film formed only near a side surface of the metal resistor element by performing anisotropic etching after being deposited on a whole surface of a wafer in a process separated from the lower-surface oxidation preventing insulating film and the upper-surface oxidation preventing insulating film. According to the present invention, it is possible to prevent the increase of the resistance value due to the oxidation of the metal resistor element and also to prevent the increase of the parasitic capacitance between metal wiring layers without complicating the fabrication process.

摘要翻译： 根据本发明的半导体器件包括：形成在金属电阻器元件的下表面上的下表面的氧化防止绝缘膜; 形成在所述金属电阻元件的上表面上的上表面氧化防止绝缘膜; 以及侧面氧化防止绝缘膜，其仅在金属电阻元件的侧面附近形成，在与下表面的氧化防止绝缘膜分离的工序中沉积在晶片的整个表面上，进行各向异性蚀刻 表面氧化防止绝缘膜。 根据本发明，可以防止由于金属电阻元件的氧化引起的电阻值的增加，并且还可以防止金属布线层之间的寄生电容的增加，而不会使制造工艺复杂化。

公开(公告)号：US07984977B2

公开(公告)日：2011-07-26

申请号：US11769091

申请日：2007-06-27

申请人： Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Tetsuro Fukui

发明人： Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Tetsuro Fukui

IPC分类号： B41J2/045

CPC分类号： H01L41/1876 ,  H01L41/319 ,  Y10T29/42

摘要： A piezoelectric element comprises a piezoelectric body including a film made of an ABO3 perovskite oxide crystal epitaxially grown above a substrate, and a pair of electrode layers provided to the piezoelectric body, wherein the piezoelectric body has a porous region on a side opposite to a side of the substrate.

摘要翻译： 压电元件包括​​压电体，该压电体包括在基板上外延生长的由ABO3钙钛矿氧化物晶体构成的膜和设置在压电体上的一对电极层，其中，压电体在与侧面相反的一侧具有多孔区域 的基底。

公开(公告)号：US07759845B2

公开(公告)日：2010-07-20

申请号：US11683100

申请日：2007-03-07

申请人： Tetsuro Fukui ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Takashi Katoda ,  Ken Nishida

发明人： Tetsuro Fukui ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Takashi Katoda ,  Ken Nishida

IPC分类号： H01L41/08

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/1876

摘要： An optical element satisfactory in transparency and characteristics as an optical modulation element, and a piezoelectric substance element satisfactory in precision and reproducibility as a fine element such as MEMS can be provided. The piezoelectric substance element includes, on a substrate, at least a first electrode, a piezoelectric substance film and a second electrode. The piezoelectric substance film does not contain a layer-structured boundary plane; the crystal phase constituting the piezoelectric substance film comprises at least two of a tetragonal, a rhombohedral, a pseudocubic, an orthorhombic and a monoclinic; and the piezoelectric substance film includes, in a portion in which a change in the composition is within a range of ±2%, a portion where a proportion of the different crystal phases changes gradually in a thickness direction of the film.

摘要翻译： 可以提供作为光调制元件的透明度和特性令人满意的光学元件，以及作为微细元件如MEMS的精度和再现性良好的压电体元件。 压电体元件在基板上至少包括第一电极，压电体膜和第二电极。 压电体膜不含有层结构的边界面; 构成压电体膜的晶相包含四方晶，菱方，假立方，斜方晶和单斜晶中的至少两种; 并且压电体膜在组成的变化范围为±2％的范围内包括不同结晶相的比例在膜的厚度方向上逐渐变化的部分。

公开(公告)号：US20090315432A1

公开(公告)日：2009-12-24

申请号：US12470699

申请日：2009-05-22

申请人： Tatsuo Furuta ,  Kaoru Miura ,  Kenichi Takeda ,  Makoto Kubota ,  Hiroshi Funakubo ,  Masaki Azuma ,  Nobuhiro Kumada ,  Satoshi Wada ,  Takashi Iijima ,  Soichiro Okamura

发明人： Tatsuo Furuta ,  Kaoru Miura ,  Kenichi Takeda ,  Makoto Kubota ,  Hiroshi Funakubo ,  Masaki Azuma ,  Nobuhiro Kumada ,  Satoshi Wada ,  Takashi Iijima ,  Soichiro Okamura

IPC分类号： H01L41/187 ,  C04B35/468 ,  H01L41/047

CPC分类号： C04B35/645 ,  C01G23/002 ,  C01P2006/40 ,  C04B35/01 ,  C04B35/16 ,  C04B35/468 ,  C04B35/4682 ,  C04B2235/3201 ,  C04B2235/3215 ,  C04B2235/3232 ,  C04B2235/3287 ,  C04B2235/3418 ,  C04B2235/444 ,  C04B2235/761 ,  C04B2235/765 ,  C04B2235/768 ,  H01L41/1871

摘要： Provided are a piezoelectric material without using lead or an alkali metal, the piezoelectric material having a stable crystal structure in a wide temperature range, high insulation property, and high piezoelectric property, and a piezoelectric element using the piezoelectric material, in which the piezoelectric material is made of a metal oxide having a tetragonal crystal structure and expressed by Ba(SixGeyTiz)O3 (here, 0≦x≦1, 0≦y≦1, and 0≦z≦0.5), the piezoelectric element includes the piezoelectric material and a pair of electrodes sandwiching the piezoelectric material, and at least one of the pair of electrodes is made of SrRuO3 or Ni.

摘要翻译： 提供一种不使用铅或碱金属的压电材料，压电材料在宽温度范围内具有稳定的晶体结构，高绝缘性和高压电性，以及使用压电材料的压电元件，其中压电材料 由具有四方晶体结构并由Ba（SixGeyTiz）O 3（这里，0 <= x <= 1,0 <= y <= 1，0 <= z <= 0.5）表示的金属氧化物制成，压电 元件包括压电材料和夹着压电材料的一对电极，并且该对电极中的至少一个由SrRuO 3或Ni制成。

公开(公告)号：US20090273257A1

公开(公告)日：2009-11-05

申请号：US12301567

申请日：2007-07-13

申请人： Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo

发明人： Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo

IPC分类号： H01L41/04 ,  H01L41/18 ,  B32B15/00

CPC分类号： B41J2/161 ,  B41J2/1646 ,  B41J2202/03 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/316

摘要： A piezoelectric substance which is made of oxide with perovskite type structure which is made of ABO3, where a principal component of A is Pb, and principal components of B contain at least two kinds of elements among Nb, Mg, Zn, Sc, Cd, Ni, Mn, Co, Yb, In, and Fe, and Ti, characterized by being a uniaxial orientation crystal or a single crystal which has an a-domain and a c-domain of tetragonal.

摘要翻译： 由ABO3制成的具有钙钛矿型结构的氧化物的压电体，其中A的主成分为Pb，B的主要成分含有Nb，Mg，Zn，Sc，Cd中的至少两种元素， Ni，Mn，Co，Yb，In和Fe以及Ti，其特征在于单轴取向晶体或单晶，其具有四方晶的a畴和c畴。

公开(公告)号：US07567022B2

公开(公告)日：2009-07-28

申请号：US11582403

申请日：2006-10-18

申请人： Tetsuro Fukui ,  Kenichi Takeda ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama

发明人： Tetsuro Fukui ,  Kenichi Takeda ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama

IPC分类号： H01L41/00 ,  H01L41/187

CPC分类号： H01L41/316 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/318

摘要： To provide a film forming method capable of obtaining a high-quality perovskite type oxide thin film, piezoelectric element having a piezoelectric substance constituted of the thin film formed by the film forming method, liquid discharge head having the piezoelectric element and liquid discharge apparatus having the liquid discharge head. A method for forming a perovskite type oxide thin film having a composition expressed by (A1x, A2y A3z) (B1j, B2k, B3l, B4m B5n)Op is included, which is a film forming method having a plurality of steps for supplying a material containing the elements onto the substrate, dividing the elements A1 to A3 and B1 to B5 into a plurality of groups and supplying each material containing the elements included in the groups onto the substrate in separate steps.

摘要翻译： 为了提供能够获得高质量钙钛矿型氧化物薄膜的成膜方法，具有由通过成膜方法形成的薄膜构成的压电体的压电元件，具有压电元件的液体排出头和具有 液体排放头。 包括具有由（A1x，A2y A3z）（B1j，B2k，B3l，B4m B5n）Op表示的组成的钙钛矿型氧化物薄膜的方法，该方法是具有用于供给材料的多个步骤的成膜方法 将元件包含在基板上，将元件A1至A3和B1至B5分成多个组，并将包含在组中的元素的每种材料分离到基板上。