公开(公告)号：US20110147707A1

公开(公告)日：2011-06-23

申请号：US12965660

申请日：2010-12-10

申请人： Hiroshi INADA ,  Yasuhiro IGUCHI ,  Youichi NAGAI ,  Hiroki MORI ,  Kouhei MIURA

发明人： Hiroshi INADA ,  Yasuhiro IGUCHI ,  Youichi NAGAI ,  Hiroki MORI ,  Kouhei MIURA

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/14636 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/1469 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

摘要： The present invention provides an image pickup device used to capture an image of an object by receiving light in a near infrared region reflected from the object. The image pickup device includes semiconductor light-receiving elements each having a light-receiving layer with a band gap wavelength of 1.65 to 3.0 μm.

摘要翻译： 本发明提供了一种用于通过在从物体反射的近红外区域中接收光来捕获对象的图像的图像拾取装置。 图像拾取装置包括各自具有带隙波长为1.65至3.0μm的光接收层的半导体光接收元件。

公开(公告)号：US20100181484A1

公开(公告)日：2010-07-22

申请号：US12689550

申请日：2010-01-19

申请人： Hiroshi INADA ,  Youichi NAGAI

发明人： Hiroshi INADA ,  Youichi NAGAI

IPC分类号： H01L27/146

CPC分类号： H01L27/14618 ,  G02B5/1876 ,  H01L27/14625 ,  H01L27/14649 ,  H01L27/14694 ,  H01L2924/0002 ,  H01L2924/00

摘要： A near-infrared imaging sensor according to the present invention includes a photodiode array sensitive to light with a wavelength of 1.2 to 3 μm and a multiplexer including a signal readout circuit. The near-infrared imaging sensor is contained in a housing and is vacuum-sealed. The housing includes a main body section and a lid covering the main body section. The lid is made of a material transparent to light with a wavelength of 1.2 to 3 μm.

摘要翻译： 根据本发明的近红外成像传感器包括对波长为1.2至3μm的光敏感的光电二极管阵列和包括信号读出电路的多路复用器。 近红外成像传感器被包含在壳体中并被真空密封。 壳体包括主体部分和覆盖主体部分的盖子。 该盖由对透明至波长为1.2至3μm的光的材料制成。

公开(公告)号：US20100171097A1

公开(公告)日：2010-07-08

申请号：US12651633

申请日：2010-01-04

申请人： Youichi NAGAI ,  Hiroshi INADA

发明人： Youichi NAGAI ,  Hiroshi INADA

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L27/14683 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2224/02122 ,  H01L2224/0401 ,  H01L2224/06179 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/1147 ,  H01L2224/1161 ,  H01L2224/11622 ,  H01L2224/1184 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/14179 ,  H01L2224/14505 ,  H01L2224/14515 ,  H01L2224/16148 ,  H01L2224/27334 ,  H01L2224/2745 ,  H01L2224/2747 ,  H01L2224/2761 ,  H01L2224/27622 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/291 ,  H01L2224/2929 ,  H01L2224/81007 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/819 ,  H01L2224/83203 ,  H01L2224/839 ,  H01L2224/92 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/12036 ,  H01L2924/12043 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00

摘要： A method for manufacturing a detection device includes the steps of providing bonding bumps on at least one of a light-receiving element array and a read-out circuit multiplexer, fixing a bump height adjusting member for adjusting the heights of the bumps to the light-receiving element array and/or the read-out circuit multiplexer on which the bumps are provided, and pressing a flat plate on the tops of the bumps and deforming the bumps until the flat plate comes in contact with the end of the bump height adjusting member.

摘要翻译： 一种检测装置的制造方法，包括以下步骤：在受光元件阵列和读出电路多路复用器中的至少一个上设置接合凸块，固定凸起高度调节构件，用于将凸块的高度调节到发光元件阵列， 接收元件阵列和/或其上设置有凸块的读出电路多路复用器，并且在凸块的顶部上按压平板并使凸起变形，直到平板与凸块高度调节构件的端部接触 。

公开(公告)号：US20090295960A1

公开(公告)日：2009-12-03

申请号：US12473919

申请日：2009-05-28

申请人： Hiroshi INADA ,  Youichi NAGAI

发明人： Hiroshi INADA ,  Youichi NAGAI

IPC分类号： H04N5/335 ,  H01J40/00

CPC分类号： H04N5/33 ,  H01L27/1446 ,  H01L31/02019 ,  H01L31/167

摘要： A photodiode that can obtain a clear signal or image in a case in which noise that is not limited to a dark current is high, a photodiode array, and an image pickup device are provided. The photodiode includes a sensor section that is provided on a first semiconductor having a band gap energy which allows input light to be received; a modulated light-emitting section that is positioned behind the sensor section with respect to the input light, and that emits modulated light to the sensor section; and a signal processor that is formed on a second semiconductor which transmits the modulated light, and that is positioned between the sensor section and the modulated light emitting section.

摘要翻译： 提供了在不限于暗电流的噪声的情况下能够获得清晰的信号或图像的光电二极管，光电二极管阵列和图像拾取装置。 光电二极管包括传感器部分，其设置在具有允许接收输入光的带隙能量的第一半导体上; 调制发光部，其相对于所述输入光定位在所述传感器部的后方，并且向所述传感器部发射调制光; 以及信号处理器，其形成在传输调制光的第二半导体上，并且位于传感器部分和调制发光部分之间。

公开(公告)号：US20120032145A1

公开(公告)日：2012-02-09

申请号：US13197272

申请日：2011-08-03

申请人： Youichi NAGAI ,  Hiroki MORI

发明人： Youichi NAGAI ,  Hiroki MORI

IPC分类号： H01L31/0352 ,  H01L31/18 ,  H01L23/485 ,  B82Y20/00

CPC分类号： H01L24/14 ,  H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L24/75 ,  H01L24/81 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1469 ,  H01L27/14694 ,  H01L2224/1184 ,  H01L2224/119 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/1403 ,  H01L2224/75304 ,  H01L2224/759 ,  H01L2224/75983 ,  H01L2224/81201 ,  H01L2224/81815 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10155 ,  H01L2924/12036 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/00

摘要： A detection device includes a light-receiving element array and a read-out integrated circuit (CMOS), bumps of the light-receiving element array being bonded to bumps of the read-out integrated circuit, and at least one of the light-receiving element array and the read-out integrated circuit having a concaved surface which faces the other. The bonded bumps positioned in a region near the periphery of the arrangement region of the bonded bumps have a larger diameter and a lower height than those of the bumps positioned in a central region. Therefore, it is possible to prevent bonding failure and insulation failure in the bumps from occurring due to a difference in coefficient of thermal expansion, while securing a small size and low cost.

摘要翻译： 检测装置包括光接收元件阵列和读出集成电路（CMOS），光接收元件阵列的凸块与读出的集成电路的凸块接合，并且至少一个光接收 元件阵列和读出的集成电路具有面对另一个的凹面。 位于接合凸块的配置区域的周围附近的区域中的结合凸块具有比位于中心区域的凸起的直径更大的直径和更低的高度。 因此，在确保小尺寸和低成本的同时，可以防止由于热膨胀系数的差异而在凸块中发生接合故障和绝缘失效。

公开(公告)号：US20120196398A1

公开(公告)日：2012-08-02

申请号：US13446621

申请日：2012-04-13

申请人： Katsushi AKITA ,  Takashi ISHIZUKA ,  Kei FUJII ,  Youichi NAGAI ,  Hideaki NAKAHATA

发明人： Katsushi AKITA ,  Takashi ISHIZUKA ,  Kei FUJII ,  Youichi NAGAI ,  Hideaki NAKAHATA

IPC分类号： H01L31/18

CPC分类号： H01L27/14694 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/2258 ,  H01L31/035236 ,  H01L31/109 ,  H01L31/1844

摘要： Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array 1 having a plurality of absorption regions 21, includes the steps of: growing an absorption layer 7 on an n-type InP substrate 3; growing an InP window layer on the absorption layer 7; and diffusing a p-type impurity in regions, in the window layer 11, corresponding to the plurality of absorption regions 21. The window layer 11 is grown by MOVPE using only metal-organic sources, at a growth temperature equal to or lower than that of the absorption layer 7.

摘要翻译： 提供一种光电二极管阵列及其制造方法，其保持形成在III-V族半导体衬底上的吸收层的结晶质量，以获得优异的特性，并提高窗口层表面的结晶度; 用于制造光电二极管阵列的外延晶片; 以及制造外延晶片的方法。 制造具有多个吸收区域21的光电二极管阵列1的方​​法包括以下步骤：在n型InP衬底3上生长吸收层7; 在吸收层7上生长InP窗口层; 并且在窗层11中对应于多个吸收区域21的区域中扩散p型杂质。窗口层11通过仅使用金属有机源的MOVPE生长，生长温度等于或低于 的吸收层7。

公开(公告)号：US20110101306A1

公开(公告)日：2011-05-05

申请号：US12916150

申请日：2010-10-29

申请人： Katsushi AKITA ,  Takashi ISHIZUKA ,  Kei FUJII ,  Youichi NAGAI ,  Hideaki NAKAHATA

发明人： Katsushi AKITA ,  Takashi ISHIZUKA ,  Kei FUJII ,  Youichi NAGAI ,  Hideaki NAKAHATA

IPC分类号： H01L31/101 ,  H01L31/18 ,  H01L31/109 ,  H01L27/146

CPC分类号： H01L27/14694 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/2258 ,  H01L31/035236 ,  H01L31/109 ,  H01L31/1844

摘要： Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array 1 having a plurality of absorption regions 21, includes the steps of: growing an absorption layer 7 on an n-type InP substrate 3; growing an InP window layer on the absorption layer 7; and diffusing a p-type impurity in regions, in the window layer 11, corresponding to the plurality of absorption regions 21. The window layer 11 is grown by MOVPE using only metal-organic sources, at a growth temperature equal to or lower than that of the absorption layer 7.

摘要翻译： 提供一种光电二极管阵列及其制造方法，其保持形成在III-V族半导体衬底上的吸收层的结晶质量，以获得优异的特性，并提高窗口层表面的结晶度; 用于制造光电二极管阵列的外延晶片; 以及制造外延晶片的方法。 制造具有多个吸收区域21的光电二极管阵列1的方​​法包括以下步骤：在n型InP衬底3上生长吸收层7; 在吸收层7上生长InP窗口层; 并且在窗层11中对应于多个吸收区域21的区域中扩散p型杂质。窗口层11通过仅使用金属有机源的MOVPE生长，生长温度等于或低于 的吸收层7。

公开(公告)号：US20090038699A1

公开(公告)日：2009-02-12

申请号：US12185250

申请日：2008-08-04

申请人： Youichi NAGAI ,  Kazuhiro MAE ,  Nobuaki AOKI

发明人： Youichi NAGAI ,  Kazuhiro MAE ,  Nobuaki AOKI

IPC分类号： B81B7/00 ,  F15C4/00 ,  F15C1/04

CPC分类号： B01F13/0059 ,  B01F5/0475 ,  B01F13/1013 ,  B01F13/1016 ,  B01F15/065 ,  B01J19/0093 ,  B01J2219/00788 ,  B01J2219/00822 ,  B01J2219/00824 ,  B01J2219/00831 ,  B01J2219/00833 ,  B01J2219/0086 ,  B01J2219/00867 ,  B01J2219/00873 ,  B01J2219/00889 ,  Y10S366/02 ,  Y10T137/212 ,  Y10T137/2147 ,  Y10T137/2196

摘要： A microdevice for multistage-mixing of process fluids which has plurality of freely-detachable units connected to each other without using pipes, wherein a microchannel for flow of the process fluids and a channel for flow of a heat-exchange medium are formed in the microdevice by mutual connection of a plurality of the units and the microdevice is locally and independently temperature-controllable.

摘要翻译： 一种用于多级混合工艺流体的微型设备，其具有多个可自由拆卸的单元，其不使用管道彼此连接，其中用于工艺流体流动的微通道和用于热交换介质流动的通道形成在微型设备中 通过多个单元的相互连接，微型设备是局部且独立的温度可控的。