发明申请
US20100181484A1 NEAR-INFRARED IMAGING SENSOR 有权
近红外成像传感器

NEAR-INFRARED IMAGING SENSOR
摘要:
A near-infrared imaging sensor according to the present invention includes a photodiode array sensitive to light with a wavelength of 1.2 to 3 μm and a multiplexer including a signal readout circuit. The near-infrared imaging sensor is contained in a housing and is vacuum-sealed. The housing includes a main body section and a lid covering the main body section. The lid is made of a material transparent to light with a wavelength of 1.2 to 3 μm.
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