发明申请
- 专利标题: NEAR-INFRARED IMAGING SENSOR
- 专利标题(中): 近红外成像传感器
-
申请号: US12689550申请日: 2010-01-19
-
公开(公告)号: US20100181484A1公开(公告)日: 2010-07-22
- 发明人: Hiroshi INADA , Youichi NAGAI
- 申请人: Hiroshi INADA , Youichi NAGAI
- 申请人地址: JP Osaka-shi
- 专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人地址: JP Osaka-shi
- 优先权: JP2009-011862 20090122
- 主分类号: H01L27/146
- IPC分类号: H01L27/146
摘要:
A near-infrared imaging sensor according to the present invention includes a photodiode array sensitive to light with a wavelength of 1.2 to 3 μm and a multiplexer including a signal readout circuit. The near-infrared imaging sensor is contained in a housing and is vacuum-sealed. The housing includes a main body section and a lid covering the main body section. The lid is made of a material transparent to light with a wavelength of 1.2 to 3 μm.
公开/授权文献
- US08378300B2 Near-infrared imaging sensor 公开/授权日:2013-02-19
信息查询
IPC分类: