公开(公告)号：US11912969B2

公开(公告)日：2024-02-27

申请号：US17044592

申请日：2019-04-03

Applicant: HELMHOLTZ-ZENTRUM DRESDEN - ROSSENDORF E.V.

Inventor： Heidemarie Schmidt ,  Ilona Skorupa ,  Katarzyna Wiesenhütter ,  Lars Rebohle

IPC: C12M1/22 ,  B01L3/00 ,  C12M1/24 ,  C12M1/00 ,  C12M1/34 ,  G01N27/22

CPC classification number: C12M23/10 ,  B01L3/5085 ,  C12M23/08 ,  C12M23/22 ,  C12M41/00 ,  G01N27/226 ,  B01L2300/0645 ,  B01L2300/0822 ,  B01L2300/0829 ,  B01L2300/168

Abstract: A transparent specimen slide on which the range and the magnitude of the near-surface electrostatic forces can be influenced and set during a process of producing the specimen slide. The specimen slide has a surface on the supporting side and a surface facing away from the supporting side and at least three layers: an electrically insulating first layer, a silicon-containing second layer arranged on the first layer, and an electrically insulating third layer arranged on the second layer. An interface is formed between the first and second layers and between the second and third layers with a first surface charge density. The interface between the second and third layers has a second surface charge density. The first and second surface charge densities have the same or different signs.

公开(公告)号：US10388370B2

公开(公告)日：2019-08-20

申请号：US16092001

申请日：2017-04-03

Applicant: Helmholtz-Zentrum Dresden—Rossendorf e.V.

Inventor： Heidemarie Schmidt ,  Kefeng Li ,  Ilona Skorupa ,  Nan Du

IPC: G11C13/00 ,  G06N3/04 ,  G06N3/063 ,  H03K19/20 ,  G11C11/54 ,  H01L45/00

Abstract: An electronic memristive device that has a complementary analog reconfigurable memristive bidirectional resistive switch. The device has a memristive layer sequence having a BFTO/BFO/BFTO three-ply layer and two electrodes. Titanium traps are arranged in the BFTO interfaces. As a result of mobile acid vacancies, the potential barriers at the interfaces of the electrodes with respect to the memristive layer sequence are in flexible form. By applying voltage pulses, the acid vacancies can be shifted from the interface with respect to the first electrode to the interface with respect to the second electrode, with raising of the potential barrier at one electrode bringing about complementary lowering of the potential barrier of the other electrode. The method for operating the device proposes adapted writing processes that use the overlaying of writing pulse sequences to achieve stipulation of a state pair of complementary resistor states. In conjunction with reading pulses of adapted polarity, the device can implement fuzzy logic and be operated as an artificial synapse with the realization of all four learning curves for complementary learning. A plurality of options for the use of the device are proposed.

公开(公告)号：US12034424B2

公开(公告)日：2024-07-09

申请号：US17058363

申请日：2019-05-07

Applicant: HELMHOLTZ-ZENTRUM DRESDEN—ROSSENDORF E.V.

Inventor： Heidemarie Schmidt ,  Nan Du ,  Agnieszka Bogusz ,  Stephan Krüger ,  Ilona Skorupa

IPC: H01F1/03 ,  H01H36/00 ,  H03H7/01

CPC classification number: H03H7/01 ,  H01H36/00 ,  H01F1/0317

Abstract: A method for reconfiguration of a vortex density in a rare earth manganate, to a non-volatile impedance switch having reconfigurable impedance, and to the use thereof as micro-inductance is disclosed. A unique voltage-time profile is applied between a first and a second electrically conductive contact attached to the rare earth manganate, such that the rare earth manganate passes through an ordering temperature in a region of an electric field forming between the two electrically conductive contacts during a cooling process during and after application of the voltage pulse or the voltage ramp, and the vortex density is thus influenced and adjusted locally in the region of the electric field forming between the two electrically conductive contacts.

公开(公告)号：US20190122730A1

公开(公告)日：2019-04-25

申请号：US16092001

申请日：2017-04-03

Applicant: Helmholtz-Zentrum Dresden - Rossendorf e.V.

Inventor： Heidemarie Schmidt ,  Kefeng Li ,  Ilona Skorupa ,  Nan Du

IPC: G11C13/00 ,  H01L45/00 ,  G11C11/54 ,  G06N3/063 ,  G06N3/04

CPC classification number: G11C13/0007 ,  G06N3/0436 ,  G06N3/049 ,  G06N3/0635 ,  G06N3/088 ,  G11C11/54 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0052 ,  G11C2013/0073 ,  G11C2013/0083 ,  G11C2013/0092 ,  G11C2213/15 ,  G11C2213/31 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/147 ,  H03K19/20

Abstract: The invention relates to an electronic memristive device that has a complementary analogue reconfigurable memristive bidirectional resistive switch. The device has a memristive layer sequence having a BFTO/BFO/BFTO three-ply layer and two electrodes. Titanium traps are arranged in the BFTO interfaces. As a result of mobile acid vacancies, the potential barriers at the interfaces of the electrodes with respect to the memristive layer sequence are in flexible form. By applying voltage pulses, the acid vacancies can be shifted from the interface with respect to the first electrode to the interface with respect to the second electrode, with raising of the potential barrier at one electrode bringing about complementary lowering of the potential barrier of the other electrode. The method according to the invention for operating the device proposes adapted writing processes that use the overlaying of writing pulse sequences to achieve stipulation of a state pair of complementary resistor states. In conjunction with reading pulses of adapted polarity, the device can implement fuzzy logic and be operated as an artificial synapse with the realisation of all four learning curves for complementary learning. A plurality of options for the use of the device operated according to the invention are proposed

公开(公告)号：US10147824B2

公开(公告)日：2018-12-04

申请号：US15124075

申请日：2015-01-26

Applicant: HELMHOLTZ-ZENTRUM DRESDEN-ROSSENDORF E.V.

Inventor： Heidemarie Schmidt ,  Ilona Skorupa ,  Slawomir Prucnal ,  Danilo Buerger ,  Agnieszka Bogusz ,  Laveen Selvaraj

IPC: H01L29/93 ,  H01L27/10 ,  H01L29/861 ,  H01L49/02 ,  H01G7/02 ,  H01L27/11507 ,  H01L31/09 ,  H01L31/10 ,  H01L27/102

Abstract: A capacitance diode or variable capacitance diode includes first and second electrodes and a layer configuration disposed in contact-making fashion between the two electrodes. The layer configuration has, one after the other in a direction from the first electrode towards the second electrode, a layer formed of a ferroelectric material and an electrically insulating layer formed of a dielectric material having electrically charged defects. A method for producing a capacitance diode or a variable capacitance diode, a storage device and a detector including a capacitance diode or a variable capacitance diode are also provided.