公开(公告)号：US10388370B2

公开(公告)日：2019-08-20

申请号：US16092001

申请日：2017-04-03

Applicant: Helmholtz-Zentrum Dresden—Rossendorf e.V.

Inventor： Heidemarie Schmidt ,  Kefeng Li ,  Ilona Skorupa ,  Nan Du

IPC: G11C13/00 ,  G06N3/04 ,  G06N3/063 ,  H03K19/20 ,  G11C11/54 ,  H01L45/00

Abstract: An electronic memristive device that has a complementary analog reconfigurable memristive bidirectional resistive switch. The device has a memristive layer sequence having a BFTO/BFO/BFTO three-ply layer and two electrodes. Titanium traps are arranged in the BFTO interfaces. As a result of mobile acid vacancies, the potential barriers at the interfaces of the electrodes with respect to the memristive layer sequence are in flexible form. By applying voltage pulses, the acid vacancies can be shifted from the interface with respect to the first electrode to the interface with respect to the second electrode, with raising of the potential barrier at one electrode bringing about complementary lowering of the potential barrier of the other electrode. The method for operating the device proposes adapted writing processes that use the overlaying of writing pulse sequences to achieve stipulation of a state pair of complementary resistor states. In conjunction with reading pulses of adapted polarity, the device can implement fuzzy logic and be operated as an artificial synapse with the realization of all four learning curves for complementary learning. A plurality of options for the use of the device are proposed.

公开(公告)号：US20190122730A1

公开(公告)日：2019-04-25

申请号：US16092001

申请日：2017-04-03

Applicant: Helmholtz-Zentrum Dresden - Rossendorf e.V.

Inventor： Heidemarie Schmidt ,  Kefeng Li ,  Ilona Skorupa ,  Nan Du

IPC: G11C13/00 ,  H01L45/00 ,  G11C11/54 ,  G06N3/063 ,  G06N3/04

CPC classification number: G11C13/0007 ,  G06N3/0436 ,  G06N3/049 ,  G06N3/0635 ,  G06N3/088 ,  G11C11/54 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0052 ,  G11C2013/0073 ,  G11C2013/0083 ,  G11C2013/0092 ,  G11C2213/15 ,  G11C2213/31 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/147 ,  H03K19/20

Abstract: The invention relates to an electronic memristive device that has a complementary analogue reconfigurable memristive bidirectional resistive switch. The device has a memristive layer sequence having a BFTO/BFO/BFTO three-ply layer and two electrodes. Titanium traps are arranged in the BFTO interfaces. As a result of mobile acid vacancies, the potential barriers at the interfaces of the electrodes with respect to the memristive layer sequence are in flexible form. By applying voltage pulses, the acid vacancies can be shifted from the interface with respect to the first electrode to the interface with respect to the second electrode, with raising of the potential barrier at one electrode bringing about complementary lowering of the potential barrier of the other electrode. The method according to the invention for operating the device proposes adapted writing processes that use the overlaying of writing pulse sequences to achieve stipulation of a state pair of complementary resistor states. In conjunction with reading pulses of adapted polarity, the device can implement fuzzy logic and be operated as an artificial synapse with the realisation of all four learning curves for complementary learning. A plurality of options for the use of the device operated according to the invention are proposed