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    Ion beam device
    3.
    发明授权
    Ion beam device 有权
    离子束装置

    公开(公告)号：US09508521B2

    公开(公告)日：2016-11-29

    申请号：US14328754

    申请日：2014-07-11

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Hiroyasu Shichi ,  Shinichi Matsubara ,  Norihide Saho ,  Masahiro Yamaoka ,  Noriaki Arai

    IPC: H01J27/00 ,  H01J27/02 ,  H01J27/26 ,  H01J37/02 ,  H01J37/067 ,  H01J37/08 ,  H01J37/28 ,  H01J37/26

    CPC classification number: H01J27/26 ,  H01J27/022 ,  H01J37/023 ,  H01J37/067 ,  H01J37/08 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0807 ,  H01J2237/2803

    Abstract: An ion beam device according to the present invention includes a gas field ion source (1) including an emitter tip (21) supported by an emitter base mount (64), a ionization chamber (15) including an extraction electrode (24) and being configured to surround the emitter tip (21), and a gas supply tube (25). A center axis line of the extraction electrode (24) overlaps or is parallel to a center axis line (14A) of the ion irradiation light system, and a center axis line (66) passing the emitter tip (21) and the emitter base mount (64) is inclinable with respect to a center axis line of the ionization chamber (15). Accordingly, an ion beam device including a gas field ion source capable of adjusting the direction of the emitter tip is provided.

    Abstract translation: 根据本发明的离子束装置包括气体离子源（1），其包括由发射极基座（64）支撑的发射极尖端（21），包括引出电极（24）的电离室（15） 构造成围绕发射器尖端（21），以及气体供应管（25）。 引出电极（24）的中心轴线与离​​子照射光系统的中心轴线（14A）重叠或平行，通过发射极尖端（21）和发射极基座 （64）相对于所述电离室（15）的中心轴线是可倾斜的。 因此，提供了包括能够调节发射极尖端的方向的气体场离子源的离子束装置。

    CHARGED PARTICLE MICROSCOPE
    4.
    发明申请
    CHARGED PARTICLE MICROSCOPE 有权
    充电颗粒显微镜

    公开(公告)号：US20150083930A1

    公开(公告)日：2015-03-26

    申请号：US14397466

    申请日：2013-04-24

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Shinichi Matsubara ,  Yoshimi Kawanami ,  Hiroyuki Tanaka ,  Hiroyasu Shichi ,  Yoichi Ose

    IPC: H01J37/08 ,  H01J37/28

    CPC classification number: H01J37/08 ,  H01J37/28 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/0807

    Abstract: The ionized gas supplied to the emitter tip of a gas field ionization ion source is cooled and purified to enable supplying a reliable and stable ion beam. Impurities contained in the ionized gas destabilize the field ionization ion source. The invention is configured to include a first heat exchanger thermally connected to a part of the field ionization ion source, a cryocooler capable of cooling a second gas line and a cold head, the second gas line being connected to the first heat exchanger and circulating a refrigerant, and a second heat exchanger that cools the first and second gas lines and is connected to the cold head.

    Abstract translation: 供给到气田电离离子源的发射极尖端的电离气体被冷却和净化，以提供可靠和稳定的离子束。 包含在电离气体中的杂质使场电离离子源稳定化。 本发明被构造成包括与场电离离子源的一部分热连接的第一热交换器，能够冷却第二气体管线和冷头的低温冷却器，第二气体管线连接到第一热交换器并循环 制冷剂和冷却第一和第二气体管线并连接到冷头的第二热交换器。

    Ion milling device and ion milling method
    6.
    发明授权
    Ion milling device and ion milling method 有权

    公开(公告)号：US10332722B2

    公开(公告)日：2019-06-25

    申请号：US15500392

    申请日：2015-07-29

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Kengo Asai ,  Hiroyasu Shichi ,  Hisayuki Takasu ,  Toru Iwaya

    IPC: H01J37/302 ,  H01J37/24 ,  H01J37/08 ,  H01J37/305 ,  H01J37/304 ,  H01J27/04

    Abstract: To provide an ion gun of a penning discharge type capable of narrowing a beam with a low ion beam current at a low acceleration voltage, an ion milling device including the same, and an ion milling method.An ion milling device that controls half width of a beam profile of an ion beam with which a sample is irradiated from an ion gun to be in a range of 200 μm to 350 μm. The device includes: the ion gun that ionizes a gas supplied from the outside, and emits an ion beam; a gas-flow-rate varying unit that varies a flow rate of the gas supplied to the ion gun; and a current measurement unit that measures a current value of the ion beam emitted from the ion gun. The gas-flow-rate varying unit sets a gas flow rate to be higher than a gas flow rate at which the ion beam current has a maximum value based on the current value measured by the current measurement unit and the flow rate of the gas determined by the gas-flow-rate varying unit.

    Ion beam apparatus and ion beam irradiation method
    8.
    发明授权
    Ion beam apparatus and ion beam irradiation method 有权

    公开(公告)号：US10211022B2

    公开(公告)日：2019-02-19

    申请号：US15501584

    申请日：2015-07-31

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Shinichi Matsubara ,  Hiroyasu Shichi ,  Yoshimi Kawanami ,  Tomihiro Hashizume

    IPC: H01J37/08 ,  H01J37/18 ,  H01J37/28

    Abstract: A gas field ionization source in which an ion beam current is stable for a long time is achieved in an ion beam apparatus equipped with a field ionization source that supplies gas to a chamber, ionizes the gas, and applies the ion beam to a sample. The ion beam apparatus includes an emitter electrode having a needle-like extremity; a chamber inside which the emitter electrode is installed; a gas supply unit that supplies the gas to the chamber; a cooling unit that is connected to the chamber and cools the emitter electrode; a discharge type exhaust unit that exhausts gas inside the chamber; and a trap type exhaust unit that exhausts gas inside the chamber. The exhaust conductance of the discharge type exhaust unit is larger than the total exhaust conductance of the trap type exhaust unit.

    ION SOURCE AND ION BEAM DEVICE USING SAME
    9.
    发明申请
    ION SOURCE AND ION BEAM DEVICE USING SAME 有权
    离子源和离子束设备使用它

    公开(公告)号：US20140299768A1

    公开(公告)日：2014-10-09

    申请号：US14351559

    申请日：2012-10-10

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Hiroyasu Shichi ,  Shinichi Matsubara ,  Yoichi Ose ,  Yoshimi Kawanami ,  Noriaki Arai

    IPC: H01J27/02 ,  H01J37/26

    CPC classification number: H01J27/022 ,  H01J37/08 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/0216 ,  H01J2237/0807

    Abstract: Provided is a charged particle beam microscope which has a small mechanical vibration amplitude of a distal end of an emitter tip, is capable of obtaining an ultra-high resolution sample observation image and removing shaking or the like of the sample observation image. A gas field ion source includes: an emitter tip configured to generate ions; an emitter-base mount configured to support the emitter tip; a mechanism configured to heat the emitter tip; an extraction electrode installed to face the emitter tip; and a mechanism configured to supply a gas to the vicinity of the emitter tip, wherein the emitter tip heating mechanism is a mechanism of heating the emitter tip by electrically conducting a filament connecting at least two terminals, the terminals are connected by a V-shaped filament, an angle of the V shape is an obtuse angle, and the emitter tip is connected to a substantial center of the filament.

    Abstract translation: 提供了一种具有发射极尖端的远端的小的机械振动振幅的带电粒子束显微镜，能够获得超高分辨率的样本观察图像并且去除样本观察图像的抖动等。 气体场离子源包括：配置成产生离子的发射极尖端; 配置为支撑发射极尖端的发射极 - 基极安装座; 构造成加热发射极尖端的机构; 安装成面向发射极尖端的引出电极; 以及构造成将气体供给到发射极尖端附近的机构，其中发射极尖端加热机构是通过导电连接至少两个端子的灯丝来加热发射极尖端的机构，所述端子通过V形 灯丝，V形的角度是钝角，并且发射极尖端连接到灯丝的大致中心。

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