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公开(公告)号：US10304653B2
公开(公告)日：2019-05-28
申请号：US15500449
申请日：2015-07-29
发明人： Kengo Asai , Hiroyasu Shichi , Hisayuki Takasu , Toru Iwaya
IPC分类号： H01J37/08 , H01J37/30 , H01J37/305 , H01J27/04
摘要： To provide an ion gun of a penning discharge type capable of achieving a milling rate which is remarkably higher than that in the related art, an ion milling device including the same, and an ion milling method.An ion generation unit includes a cathode that emits electrons, an anode that is provided within the ion generation unit and has an inner diameter of 5.2 mm or less, and magnetic-field generation means using a permanent magnet of which a maximum energy product ranges from 110 kJ/m3 to 191 kJ/m3.
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公开(公告)号：US09499900B2
公开(公告)日：2016-11-22
申请号：US14379805
申请日：2013-02-18
发明人： Atsushi Kamino , Hisayuki Takasu , Hirobumi Muto , Toru Iwaya
IPC分类号： C23C14/30 , G01N1/32 , H01J37/305 , H01J37/20 , H01J37/30
CPC分类号： C23C14/30 , G01N1/32 , H01J37/20 , H01J37/30 , H01J37/3053 , H01J37/3056 , H01J2237/317 , H01J2237/31745 , H01J2237/31749 , H01J2237/334
摘要： The present invention advantageously provides an ion milling device that can set a high-precision processing area with a simple structure. The ion milling device includes a sample holder that holds a sample and a mask partially restricting irradiation of the sample with an ion beam. The sample holder includes a first contact surface that contacts an end surface of the sample located on a passing orbit side of the ion beam, and a second contact surface that contacts an end surface of the mask so that the mask is located at a position spaced apart from the ion beam more than the first contact surface.
摘要翻译： 本发明有利地提供了一种能够以简单结构设置高精度加工区域的离子铣削装置。 离子研磨装置包括保持样品的保持器和用离子束部分地限制样品的照射的掩模。 样品保持器包括接触位于离子束的通过轨道侧的样品的端面的第一接触表面和接触掩模的端面的第二接触表面，使得掩模位于间隔开的位置 离子束除了第一接触表面以外。
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公开(公告)号：US20150008121A1
公开(公告)日：2015-01-08
申请号：US14379805
申请日：2013-02-18
发明人： Atsushi Kamino , Hisayuki Takasu , Hirobumi Muto , Toru Iwaya
IPC分类号： C23C14/30 , H01J37/305
CPC分类号： C23C14/30 , G01N1/32 , H01J37/20 , H01J37/30 , H01J37/3053 , H01J37/3056 , H01J2237/317 , H01J2237/31745 , H01J2237/31749 , H01J2237/334
摘要： The present invention aims at providing an ion milling device that can set a high-precision processing area with a simple structure. In order to achieve the above object, there is proposed an ion milling device including a sample holder that holds a sample and a mask partially restricting irradiation of the sample with an ion beam, in which the sample holder includes a first contact surface that contacts with an end surface of the sample located on a passing orbit side of the ion beam, and a second contact surface that contacts with an end surface of the mask so that the mask is located at a position spaced apart from the ion beam more than the first contact surface.
摘要翻译： 本发明旨在提供一种能够以简单的结构设置高精度加工区域的离子铣削装置。 为了实现上述目的，提出了一种离子铣削装置，其包括保持样品的样品保持器和部分地限制用离子束照射样品的掩模，其中样品保持器包括与第一接触表面接触的第一接触表面 所述样品的端面位于所述离子束的通过轨道侧，以及与所述掩模的端面接触的第二接触表面，使得所述掩模位于比所述离子束更远离所述离子束的位置 接触面。
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公开(公告)号：US10832889B2
公开(公告)日：2020-11-10
申请号：US16320525
申请日：2016-08-09
发明人： Asako Kaneko , Hisayuki Takasu , Toru Iwaya
IPC分类号： H01J37/20 , H01J37/09 , H01J37/305 , H01J37/30
摘要： A charged particle beam device that can improve machining position precision in section processing using a shielding plate is provided. The invention is directed to a charged particle beam device including: an ion source (101); a sample stand (106) on which a sample (107) is mounted; a shielding plate (108) placed so that a portion of the sample (107) is exposed when seen from the ion source (101); and tilt units (123, 124) that tilt the sample (107) and the shielding plate (108) relative to the irradiation direction of an ion beam (102) from the ion source (101) to the sample (107).
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公开(公告)号：US10332722B2
公开(公告)日：2019-06-25
申请号：US15500392
申请日：2015-07-29
发明人： Kengo Asai , Hiroyasu Shichi , Hisayuki Takasu , Toru Iwaya
IPC分类号： H01J37/302 , H01J37/24 , H01J37/08 , H01J37/305 , H01J37/304 , H01J27/04
摘要： To provide an ion gun of a penning discharge type capable of narrowing a beam with a low ion beam current at a low acceleration voltage, an ion milling device including the same, and an ion milling method.An ion milling device that controls half width of a beam profile of an ion beam with which a sample is irradiated from an ion gun to be in a range of 200 μm to 350 μm. The device includes: the ion gun that ionizes a gas supplied from the outside, and emits an ion beam; a gas-flow-rate varying unit that varies a flow rate of the gas supplied to the ion gun; and a current measurement unit that measures a current value of the ion beam emitted from the ion gun. The gas-flow-rate varying unit sets a gas flow rate to be higher than a gas flow rate at which the ion beam current has a maximum value based on the current value measured by the current measurement unit and the flow rate of the gas determined by the gas-flow-rate varying unit.
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公开(公告)号：US10008365B2
公开(公告)日：2018-06-26
申请号：US15011980
申请日：2016-02-01
发明人： Toru Iwaya , Hirobumi Muto , Hisayuki Takasu , Atsushi Kamino , Asako Kaneko
IPC分类号： H01J37/305 , H01J37/30 , H01J37/20 , H01J37/304
CPC分类号： H01J37/3053 , H01J37/20 , H01J37/3005 , H01J37/3007 , H01J37/304 , H01J2237/20207 , H01J2237/20214 , H01J2237/26
摘要： An ion milling device of the present invention is provided with a tilt stage (8) which is disposed in a vacuum chamber (15) and has a tilt axis parallel to a first axis orthogonal to an ion beam, a drive mechanism (9, 51) which has a rotation axis and a tilt axis parallel to a second axis orthogonal to the first axis and rotates or tilts a sample (3), and a switching unit which enables switching between a state in which the ion beam is applied while the sample is rotated or swung while the tilt stage is tilted, and a state in which the ion beams is applied while the tilt stage is brought into an untilted state and the sample is swung. Consequently, the ion milling device capable of performing cross-section processing and flat processing of the sample in the same vacuum chamber is implemented.
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公开(公告)号：US09558912B2
公开(公告)日：2017-01-31
申请号：US14890936
申请日：2014-04-28
发明人： Asako Kaneko , Hisayuki Takasu , Hirobumi Mutou , Toru Iwaya , Mami Konomi
IPC分类号： H01J37/20 , H01J37/305 , H01J37/302 , G01K1/14 , G01N1/32 , H01J37/30
CPC分类号： H01J37/20 , G01K1/14 , G01N1/32 , H01J37/30 , H01J37/3002 , H01J37/3023 , H01J37/3053 , H01J2237/002 , H01J2237/026 , H01J2237/08 , H01J2237/2001 , H01J2237/2007 , H01J2237/20271 , H01J2237/20285 , H01J2237/317
摘要： The present invention aims at providing an ion milling apparatus for emitting an ion beam to a sample to process the sample and capable of controlling the temperature of the sample with high accuracy regardless of deformation or the like of the sample being irradiated with the ion beam, and proposes an ion milling apparatus including at least one of a shield holding member for supporting a shield for shielding the sample from the ion beam while exposing a part of the sample to the ion beam; a shifting mechanism for shifting a surface of the sample stand in contact with the sample following deformation of the sample during irradiation with the ion beam, the shifting mechanism having a temperature control mechanism for controlling temperature of at least one of the shield holding member and the sample stand; and a sample holding member disposed between the shield and the sample, the sample holding member deforming following deformation of the sample during irradiation with the ion beam, for example.
摘要翻译： 本发明的目的在于提供一种离子铣削装置，用于将离子束发射到样品以处理样品并且能够高精度地控制样品的温度，而不管样品被离子束照射的变形等， 并提出了一种离子铣削装置，其包括屏蔽保持构件中的至少一个，用于支撑用于将样品从离子束屏蔽的屏蔽，同时将一部分样品暴露于离子束; 移动机构，用于使样品台的表面在与离子束照射期间发生变形之后与试样接触而移动，所述移动机构具有温度控制机构，用于控制至少一个屏蔽保持部件和 样品台 以及设置在所述屏蔽体和所述试样之间的样品保持部件，所述样品保持部件例如在用所述离子束照射时，随着所述样品的变形而发生变形。
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公开(公告)号：US11621141B2
公开(公告)日：2023-04-04
申请号：US16077782
申请日：2016-02-26
发明人： Toru Iwaya , Hisayuki Takasu , Sakae Koubori
IPC分类号： H01J37/20 , H01J37/305 , H01J37/08 , H01J37/26 , H01J37/304 , H01J37/30
摘要： Provided is a machining technology to obtain a desired machining content while suppressing a possibility of causing a redeposition in a machining surface. The invention is directed to provide an ion milling device which includes an ion source which emits an ion beam, a sample holder which holds a sample, and a sample sliding mechanism which slides the sample holder in a direction including a normal direction of an axis of the ion beam.
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公开(公告)号：US11257654B2
公开(公告)日：2022-02-22
申请号：US16316289
申请日：2016-07-14
发明人： Kengo Asai , Hiroyasu Shichi , Toru Iwaya , Hisayuki Takasu
IPC分类号： H01J37/08 , H01J37/305 , H01J37/09
摘要： To provide an ion milling apparatus adapted to suppress the contamination of a beam forming electrode. The ion milling apparatus includes: an ion gun containing therein a beam forming electrode for forming an ion beam; a specimen holder for fixing a specimen to be processed by irradiation of an ion beam; a mask for shielding a part of the specimen from the ion beam; and an ion gun controller for controlling the ion gun.
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公开(公告)号：US10269534B2
公开(公告)日：2019-04-23
申请号：US15547315
申请日：2015-01-30
发明人： Toru Iwaya , Hisayuki Takasu , Sakae Koubori , Atsushi Kamino , Kento Horinouchi
IPC分类号： H01J37/20 , H01J37/26 , H01J37/31 , H01J37/305
摘要： The present invention relates to adjustment of a mask position by driving an R-axis of an electron microscope in order to adjust the mask position with high accuracy while performing observation by the electron microscope without providing a heat generation source inside the electron microscope. The R-axis originally exists in a sample chamber of the electron microscope, which enables control with high accuracy. The R-axis driving of a sample stage can be substituted by raster rotation, therefore, the mask position can be adjusted with high accuracy while performing observation by the electron microscope according to the present invention.
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